| Valence band engineering of GaAsBi for low noise avalanche photodiodes Y Liu, X Yi, NJ Bailey, Z Zhou, TBO Rockett, LW Lim, CH Tan, ... Nature communications 12 (1), 4784, 2021 | 37 | 2021 |
| GaAsBi: from molecular beam epitaxy growth to devices RD Richards, NJ Bailey, Y Liu, TBO Rockett, AR Mohmad physica status solidi (b) 259 (2), 2100330, 2022 | 19 | 2022 |
| Exploring the formation of InAs (Bi)/GaAs QDs at two growth-temperature regimes under different Bi supply conditions S Flores, DF Reyes, T Ben, V Braza, NJ Bailey, MR Carr, RD Richards, ... Applied Surface Science 607, 154966, 2023 | 4 | 2023 |
| Effect of MBE growth conditions on GaAsBi photoluminescence lineshape and localised state filling NJ Bailey, TBO Rockett, S Flores, DF Reyes, JPR David, RD Richards Scientific reports 12 (1), 797, 2022 | 2 | 2022 |
| Growth of InAs (Bi)/GaAs quantum dots under a bismuth surfactant at high and low temperature NJ Bailey, MR Carr, JPR David, RD Richards Journal of Nanomaterials 2022 (1), 5108923, 2022 | 2 | 2022 |
| Exploring the Implementation of GaAsBi Alloys as Strain-Reducing Layers in InAs/GaAs Quantum Dots V Braza, D Fernández, T Ben, S Flores, NJ Bailey, M Carr, R Richards, ... Nanomaterials 14 (4), 375, 2024 | | 2024 |
| Exploring the Implementation of GaAsBi Alloys as Strain-Reducing Layers in InAs/GaAs Quantum Dots MV Braza Blanco, D Fernández de los Reyes, T Ben Fernández, ... MDPI, 2024 | | 2024 |
| Growth optimisation of III-V semiconductors using bismuth as a surfactant and a constituent. NJ Bailey University of Sheffield, 2022 | | 2022 |
Robert D RichardsResearch Fellow, University of Sheffield在 sheffield.ac.uk 的电子邮件经过验证
