| Interconnect limits on gigascale integration (GSI) in the 21st century JA Davis, R Venkatesan, A Kaloyeros, M Beylansky, SJ Souri, K Banerjee, ... Proceedings of the IEEE 89 (3), 305-324, 2001 | 934 | 2001 |
| Process for low-temperature metal-organic chemical vapor deposition of tungsten nitride and tungsten nitride films AE Kaloyeros, BC Arkles US Patent 6,884,466, 2005 | 543 | 2005 |
| Ultrathin diffusion barriers/liners for gigascale copper metallization AE Kaloyeros, E Eisenbraun Annual review of materials science 30 (1), 363-385, 2000 | 480 | 2000 |
| Methodology for in-situ doping of aluminum coatings AE Kaloyeros, A Knorr, J Faltermeier US Patent 6,534,133, 2003 | 425 | 2003 |
| Advanced multilayer metallization schemes with copper as interconnection metal SP Murarka, RJ Gutmann, AE Kaloyeros, WA Lanford Thin Solid Films 236 (1-2), 257-266, 1993 | 319 | 1993 |
| Silicon nitride and silicon nitride-rich thin film technologies: trends in deposition techniques and related applications AE Kaloyeros, FA Jové, J Goff, B Arkles ECS Journal of Solid State Science and Technology 6 (10), P691, 2017 | 173 | 2017 |
| Method of interlayer mediated epitaxy of cobalt silicide from low temperature chemical vapor deposition of cobalt AE Kaloyeros, A Londergan, B Arkles US Patent 6,346,477, 2002 | 154 | 2002 |
| Low-temperature metal-organic chemical vapor deposition (LTMOCVD) of device-quality copper films for microelectronic applications AE Kaloyeros, A Feng, J Garhart, KC Brooks, SK Ghosh, AN Saxena, ... Journal of electronic materials 19, 271-276, 1990 | 154 | 1990 |
| Organometallic route to the chemical vapor deposition of titanium carbide films at exceptionally low temperatures GS Girolami, JA Jensen, DM Pollina, CM Allocca, AE Kaloyeros, ... Journal of the American Chemical Society 109 (5), 1579-1580, 1987 | 126 | 1987 |
| Tantalum nitride films grown by inorganic low temperature thermal chemical vapor deposition diffusion barrier properties in copper metallization AE Kaloyeros, X Chen, T Stark, K Kumar, SC Seo, GG Peterson, HL Frisch, ... Journal of the electrochemical society 146 (1), 170, 1999 | 115 | 1999 |
| Silicon nitride and silicon nitride-rich thin film technologies: state-of-the-art processing technologies, properties, and applications AE Kaloyeros, Y Pan, J Goff, B Arkles ECS Journal of Solid State Science and Technology 9 (6), 063006, 2020 | 102 | 2020 |
| Chemical vapor deposition of copper for multilevel metallization AE Kaloyeros, MA Fury MRS bulletin 18 (6), 22-29, 1993 | 90 | 1993 |
| White light emission from amorphous silicon oxycarbide (a-SiCxOy) thin films: Role of composition and postdeposition annealing S Gallis, V Nikas, H Suhag, M Huang, AE Kaloyeros Applied Physics Letters 97 (8), 2010 | 89 | 2010 |
| Development of antifouling surfaces to reduce bacterial attachment MV Graham, AP Mosier, TR Kiehl, AE Kaloyeros, NC Cady Soft Matter 9 (27), 6235-6244, 2013 | 83 | 2013 |
| Low temperature metal-organic chemical vapor deposition of tungsten nitride as diffusion barrier for copper metallization JE Kelsey, C Goldberg, G Nuesca, G Peterson, AE Kaloyeros, B Arkles Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1999 | 78 | 1999 |
| The effects of processing parameters in the chemical vapor deposition of cobalt from cobalt tricarbonyl nitrosyl AR Ivanova, G Nuesca, X Chen, C Goldberg, AE Kaloyeros, B Arkles, ... Journal of The Electrochemical Society 146 (6), 2139, 1999 | 77 | 1999 |
| Comparative study of the effects of thermal treatment on the optical properties of hydrogenated amorphous silicon-oxycarbide S Gallis, V Nikas, M Huang, E Eisenbraun, AE Kaloyeros Journal of Applied Physics 102 (2), 2007 | 72 | 2007 |
| Silicon based films formed from iodosilane precursors and method of making the same BC Arkles, AE Kaloyeros US Patent 6,586,056, 2003 | 70 | 2003 |
| Low temperature plasma-assisted chemical vapor deposition of tantalum nitride from tantalum pentabromide for copper metallization X Chen, HL Frisch, AE Kaloyeros, B Arkles, J Sullivan Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1999 | 69 | 1999 |
| Process and apparatus for the use of solid precursor sources in liquid form for vapor deposition of materials AE Kaloyeros, ET Eisenbraun, B Zheng US Patent 5,376,409, 1994 | 68 | 1994 |
Barry ArklesDepartment of Chemistry, Temple University在 temple.edu 的电子邮件经过验证
