| Ultranarrow luminescence lines from single quantum dots M Grundmann, J Christen, NN Ledentsov, J Böhrer, D Bimberg, ... Physical Review Letters 74 (20), 4043, 1995 | 986 | 1995 |
| Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth NN Ledentsov, VA Shchukin, M Grundmann, N Kirstaedter, J Böhrer, ... Physical Review B 54 (12), 8743, 1996 | 654 | 1996 |
| InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm VM Ustinov, NA Maleev, AE Zhukov, AR Kovsh, AY Egorov, AV Lunev, ... Applied physics letters 74 (19), 2815-2817, 1999 | 513 | 1999 |
| Tamm plasmon polaritons: Slow and spatially compact light ME Sasin, RP Seisyan, MA Kalitteevski, S Brand, RA Abram, ... Applied physics letters 92 (25), 2008 | 445 | 2008 |
| Gain and differential gain of single layer InAs/GaAs quantum dot injection lasers N Kirstaedter, OG Schmidt, NN Ledentsov, D Bimberg, VM Ustinov, ... Applied physics letters 69 (9), 1226-1228, 1996 | 412 | 1996 |
| Multiphonon‐relaxation processes in self‐organized InAs/GaAs quantum dots R Heitz, M Grundmann, NN Ledentsov, L Eckey, M Veit, D Bimberg, ... Applied Physics Letters 68 (3), 361-363, 1996 | 342 | 1996 |
| Ordered arrays of quantum dots: Formation, electronic spectra, relaxation phenomena, lasing NN Ledentsov, M Grundmann, N Kirstaedter, O Schmidt, R Heitz, J Böhrer, ... Solid-State Electronics 40 (1-8), 785-798, 1996 | 310 | 1996 |
| Structural characterization of (In, Ga) As quantum dots in a GaAs matrix S Ruvimov, P Werner, K Scheerschmidt, U Gösele, J Heydenreich, ... Physical Review B 51 (20), 14766, 1995 | 284 | 1995 |
| Electronic states and band alignment in GalnNAs/GaAs quantum-well structures with low nitrogen content M Hetterich, MD Dawson, AY Egorov, D Bernklau, H Riechert Applied Physics Letters 76 (8), 1030-1032, 2000 | 254 | 2000 |
| Monolithic VCSEL with InGaAsN active region emitting at 1.28 µm and CW output power exceeding 500µW at room temperature G Steinle, H Riechert, AY Egorov Electronics Letters 37 (2), 1, 2001 | 253 | 2001 |
| InAs–GaAs quantum pyramid lasers: in situ growth, radiative lifetimes and polarization properties D Bimberg, NN Ledentsov, M Grundmann, N Kirstaedter, OG Schmidt, ... Japanese journal of applied physics 35 (2S), 1311, 1996 | 214 | 1996 |
| Structural and optical properties of InAs–GaAs quantum dots subjected to high temperature annealing AO Kosogov, P Werner, U Gösele, NN Ledentsov, D Bimberg, VM Ustinov, ... Applied Physics Letters 69 (20), 3072-3074, 1996 | 198 | 1996 |
| 8 W continuous wave operation of InGaAsN lasers at 1.3 µm DA Livshits, AY Egorov, H Riechert Electronics Letters 36 (16), 1381-1382, 2000 | 197 | 2000 |
| Optical properties of heterostructures with InGaAs-GaAs quantum clusters NN Ledentsov, VM Ustinov, AY Egorov, AE Zhukov, MV Maksimov, ... Semiconductors 28 (8), 832-834, 1994 | 191 | 1994 |
| InAs/GaAs quantum dots radiative recombination from zero‐dimensional states M Grundmann, NN Ledentsov, R Heitz, L Eckey, J Christen, J Böhrer, ... physica status solidi (b) 188 (1), 249-258, 1995 | 187 | 1995 |
| The Physics of Semiconductors PN Brounkov, NN Faleev, YG Musikhin, AA Suvorova, AF Tsatsul’nikov, ... World Scientific, Singapore, 1996 | 171 | 1996 |
| Recombination mechanisms in GaInNAs/GaAs multiple quantum wells A Kaschner, T Lüttgert, H Born, A Hoffmann, AY Egorov, H Riechert Applied Physics Letters 78 (10), 1391-1393, 2001 | 157 | 2001 |
| GaN nanowire ultraviolet photodetector with a graphene transparent contact AV Babichev, H Zhang, P Lavenus, FH Julien, AY Egorov, YT Lin, LW Tu, ... Applied Physics Letters 103 (20), 2013 | 152 | 2013 |
| High power CW operation of InGaAsN lasers at 1.3 µm AY Egorov, D Bernklau, D Livshits, V Ustinov, ZI Alferov, H Riechert Electronics Letters 35 (19), 1643-1644, 1999 | 150 | 1999 |
| Vertical cavity lasers based on vertically coupled quantum dots JA Lott, NN Ledentsov, VM Ustinov, AY Egorov, AE Zhukov, PS Kop'ev, ... Electronics Letters 33 (13), 1150-1150, 1997 | 150 | 1997 |
