| High on/off current ratio AlGaN/GaN MOS-HEMTs employing RF-sputtered HfO2 gate insulators O Seok, W Ahn, MK Han, MW Ha Semiconductor science and technology 28 (2), 025001, 2012 | 51 | 2012 |
| A device-to-system perspective regarding self-heating enhanced hot carrier degradation in modern field-effect transistors: A topical review MA Alam, BK Mahajan, YP Chen, W Ahn, H Jiang, SH Shin IEEE Transactions on Electron Devices 66 (11), 4556-4565, 2019 | 46 | 2019 |
| [Invited] Integrated modeling of Self-heating of confined geometry (FinFET, NWFET, and NSHFET) transistors and its implications for the reliability of sub-20nm modern … W Ahn, SH Shin, C Jiang, H Jiang, MA Wahab, MA Alam Microelectronics Reliability 81, 262-273, 2018 | 42 | 2018 |
| A New Framework of Physics-Based Compact Model Predicts Reliability of Self-Heated Modern ICs: FinFET, NWFET, NSHFET Comparison W Ahn, C Jiang, J Xu, MA Alam Electron Devices Meeting (IEDM), 2017, 2017 | 40 | 2017 |
| A Predictive Model for IC Self-Heating Based on Effective Medium and Image Charge Theories and Its Implications for Interconnect and Transistor Reliability W Ahn, H Zhang, T Shen, C Christiansen, P Justison, S Shin, MA Alam IEEE Transactions on Electron Devices, 2017 | 28 | 2017 |
| A novel synthesis of Rent's rule and effective-media theory predicts FEOL and BEOL reliability of self-heated ICs W Ahn, H Jiang, SH Shin, MA Alam 2016 IEEE International Electron Devices Meeting (IEDM), 7.1. 1-7.1. 4, 2016 | 25 | 2016 |
| High‐breakdown voltage and low on‐resistance AlGaN/GaN on Si MOS‐HEMTs employing an extended TaN gate on HfO2 gate insulator O Seok, W Ahn, MK Han, MW Ha Electronics letters 49 (6), 425-427, 2013 | 19 | 2013 |
| Performance potential of Ge CMOS technology from a material-device-circuit perspective SH Shin, H Jiang, W Ahn, H Wu, W Chung, DY Peide, MA Alam IEEE Transactions on Electron Devices 65 (5), 1679-1684, 2018 | 17 | 2018 |
| Role of the insulating fillers in the encapsulation material on the lateral charge spreading in HV-ICs I Imperiale, S Reggiani, G Pavarese, E Gnani, A Gnudi, G Baccarani, ... IEEE Transactions on Electron Devices 64 (3), 1209-1216, 2017 | 14 | 2017 |
| Effects of filler configuration and moisture on dissipation factor and critical electric field of epoxy composites for HV-ICs encapsulation W Ahn, D Cornigli, D Varghese, L Nguyen, S Krishnan, S Reggiani, ... IEEE Transactions on Components, Packaging and Manufacturing Technology 10 …, 2020 | 13 | 2020 |
| Effect of Ga2O3 sputtering power on breakdown voltage of AlGaN/GaN high-electron-mobility transistors O Seok, W Ahn, MK Han, MW Ha Journal of Vacuum Science & Technology B 31 (1), 2013 | 13 | 2013 |
| Fundamental trade-off between short-channel control and hot carrier degradation in an extremely-thin silicon-on-insulator (ETSOI) technology SH Shin, MA Wahab, W Ahn, A Ziabari, K Maize, A Shakouri, MA Alam 2015 IEEE International Electron Devices Meeting (IEDM), 20.3. 1-20.3. 4, 2015 | 12 | 2015 |
| Space charge redistribution in epoxy mold compounds of high-voltage ICs at dry and wet conditions: Theory and experiment W Ahn, MA Alam, D Cornigli, S Reggiani, D Varghese, S Krishnan IEEE Transactions on Dielectrics and Electrical Insulation 28 (6), 2043-2051, 2021 | 8 | 2021 |
| Optimum filler geometry for suppression of moisture diffusion in molding compounds W Ahn, SH Shin, R Asadpour, D Varghese, L Nguyen, S Krishnan, ... 2016 IEEE International Reliability Physics Symposium (IRPS), PA-1-1-PA-1-4, 2016 | 8 | 2016 |
| High-performance AlGaN/GaN High-electron-mobility transistors employing H2O annealing W Ahn, O Seok, SM Song, MK Han, MW Ha Journal of crystal growth 378, 600-603, 2013 | 8 | 2013 |
| Design and Optimization of -Ga2O3 on (h-BN layered) Sapphire for High Efficiency Power Transistors: A Device-Circuit-Package Perspective BK Mahajan, YP Chen, W Ahn, N Zagni, MA Alam 2018 IEEE International Electron Devices Meeting (IEDM), 24.6. 1-24.6. 4, 2018 | 7 | 2018 |
| Various Schottky Contacts of AlGaN/GaN Schottky Barrier Diodes (SBDs) W Ahn, O Seok, MW Ha, YS Kim, MK Han ECS Transactions 53 (2), 171, 2013 | 7 | 2013 |
| Normally-off AlGaN/GaN MOS-HEMTs by KOH wet etch and rf-sputtered HfO2 gate insulator W Ahn, O Seok, MW Ha, YS Kim, MK Han 2013 25th International Symposium on Power Semiconductor Devices & IC's …, 2013 | 6 | 2013 |
| High voltage time-dependent dielectric breakdown in stacked intermetal dielectrics SH Shin, YP Chen, W Ahn, H Guo, B Williams, J West, T Bonifield, ... 2018 IEEE International Reliability Physics Symposium (IRPS), P-GD. 9-1-P-GD …, 2018 | 4 | 2018 |
| Thermoreflectance imaging of electromigration evolution in asymmetric aluminum constrictions H Tian, W Ahn, K Maize, M Si, P Ye, MA Alam, A Shakouri, P Bermel Journal of Applied Physics 123 (3), 2018 | 4 | 2018 |
Muhammad Ashraful AlamJai N. Gupta Professor of Electrical Engineering, Purdue University在 purdue.edu 的电子邮件经过验证
