| Characteristics and mechanism of conduction/set process in TiN∕ ZnO∕ Pt resistance switching random-access memories N Xu, L Liu, X Sun, X Liu, D Han, Y Wang, R Han, J Kang, B Yu Applied Physics Letters 92 (23), 2008 | 467 | 2008 |
| High-performance transparent AZO TFTs fabricated on glass substrate J Cai, D Han, Y Geng, W Wang, L Wang, S Zhang, Y Wang IEEE transactions on electron devices 60 (7), 2432-2435, 2013 | 61 | 2013 |
| Reliability characteristics of high-K gate dielectrics HfO2 in metal-oxide semiconductor capacitors D Han, J Kang, C Lin, R Han Microelectronic engineering 66 (1-4), 643-647, 2003 | 53 | 2003 |
| Effect of Al doping on performance of ZnO thin film transistors J Dong, D Han, H Li, W Yu, S Zhang, X Zhang, Y Wang Applied Surface Science 433, 836-839, 2018 | 44 | 2018 |
| Oxygen interstitial creation in a-IGZO thin-film transistors under positive gate-bias stress X Zhou, Y Shao, L Zhang, H Lu, H He, D Han, Y Wang, S Zhang IEEE Electron Device Letters 38 (9), 1252-1255, 2017 | 44 | 2017 |
| Studies of Ti-and Ni-germanide Schottky contacts on n-Ge (1 0 0) substrates D Han, Y Wang, D Tian, W Wang, X Liu, J Kang, R Han Microelectronic engineering 82 (2), 93-98, 2005 | 44 | 2005 |
| The effect of current compliance on the resistive switching behaviors in TiN/ZrO2/Pt memory device B Sun, L Liu, N Xu, B Gao, Y Wang, D Han, X Liu, R Han, J Kang Japanese journal of applied physics 48 (4S), 04C061, 2009 | 33 | 2009 |
| High-performance ZnO thin-film transistors prepared by atomic layer deposition H Li, D Han, Z Yi, J Dong, S Zhang, X Zhang, Y Wang IEEE Transactions on Electron Devices 66 (7), 2965-2970, 2019 | 30 | 2019 |
| Fully transparent high performance thin film transistors with bilayer ITO/Al-Sn-Zn-O channel structures fabricated on glass substrate Y Cong, D Han, J Dong, S Zhang, X Zhang, Y Wang Scientific Reports 7 (1), 1497, 2017 | 29 | 2017 |
| Fully transparent flexible tin-doped zinc oxide thin film transistors fabricated on plastic substrate D Han, Y Zhang, Y Cong, W Yu, X Zhang, Y Wang Scientific Reports 6 (1), 38984, 2016 | 29 | 2016 |
| Enhanced electrical properties of dual-layer channel ZnO thin film transistors prepared by atomic layer deposition H Li, D Han, J Dong, W Yu, Y Liang, Z Luo, S Zhang, X Zhang, Y Wang Applied Surface Science 439, 632-637, 2018 | 28 | 2018 |
| High-performance Al–Sn–Zn–O thin-film transistor with a quasi-double-channel structure Y Cong, D Han, X Zhou, L Huang, P Shi, W Yu, Y Zhang, S Zhang, ... IEEE Electron Device Letters 37 (1), 53-56, 2015 | 27 | 2015 |
| Improved resistive switching characteristics of Ag-doped ZrO2 films fabricated by sol-gel process S Bing, L Li-Feng, H De-Dong, W Yi, L Xiao-Yan, H Ru-Qi, K Jin-Feng Chinese Physics Letters 25 (6), 2187, 2008 | 24 | 2008 |
| A Novel High-Endurance FeFET Memory Device Based on ZrO2 Anti-Ferroelectric and IGZO Channel Z Liang, K Tang, J Dong, Q Li, Y Zhou, R Zhu, Y Wu, D Han, R Huang 2021 IEEE International Electron Devices Meeting (IEDM), 17.3. 1-17.3. 4, 2021 | 22 | 2021 |
| Enhanced Performance of Atomic Layer Deposited Thin-Film Transistors With High-Quality ZnO/Al2O3 Interface H Li, D Han, J Dong, Z Yi, X Zhou, S Zhang, X Zhang, Y Wang IEEE Transactions on Electron Devices 67 (2), 518-523, 2020 | 22 | 2020 |
| High-performance dual-layer channel indium gallium zinc oxide thin-film transistors fabricated in different oxygen contents at low temperature Y Tian, D Han, S Zhang, F Huang, D Shan, Y Cong, J Cai, L Wang, ... Japanese Journal of Applied Physics 53 (4S), 04EF07, 2014 | 22 | 2014 |
| Electrical properties of Al2O3 gate dielectrics C Lin, J Kang, D Han, D Tian, W Wang, J Zhang, M Liu, X Liu, R Han Microelectronic engineering 66 (1-4), 830-834, 2003 | 21 | 2003 |
| Investigation on transparent, conductive ZnO: Al films deposited by atomic layer deposition process K Zhao, J Xie, Y Zhao, D Han, Y Wang, B Liu, J Dong Nanomaterials 12 (1), 172, 2022 | 19 | 2022 |
| Effects of channel thickness on electrical performance and stability of high-performance InSnO thin-film transistors Q Li, J Dong, D Han, Y Wang Membranes 11 (12), 929, 2021 | 19 | 2021 |
| Oxygen adsorption effect of amorphous InGaZnO thin-film transistors X Zhou, Y Shao, L Zhang, X Xiao, D Han, Y Wang, S Zhang IEEE Electron Device Letters 38 (4), 465-468, 2017 | 19 | 2017 |
