| Ultrawide‐bandgap semiconductors: research opportunities and challenges JY Tsao, S Chowdhury, MA Hollis, D Jena, NM Johnson, KA Jones, ... Advanced Electronic Materials 4 (1), 1600501, 2018 | 1207 | 2018 |
| The 2020 UV emitter roadmap H Amano, R Collazo, C De Santi, S Einfeldt, M Funato, J Glaab, ... Journal of Physics D: Applied Physics 53 (50), 503001, 2020 | 400 | 2020 |
| Progress on n‐type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications R Collazo, S Mita, J Xie, A Rice, J Tweedie, R Dalmau, Z Sitar physica status solidi c 8 (7‐8), 2031-2033, 2011 | 209 | 2011 |
| On the origin of the 265 nm absorption band in AlN bulk crystals R Collazo, J Xie, BE Gaddy, Z Bryan, R Kirste, M Hoffmann, R Dalmau, ... Applied Physics Letters 100 (19), 2012 | 190 | 2012 |
| Growth and characterization of AlN and AlGaN epitaxial films on AlN single crystal substrates R Dalmau, B Moody, R Schlesser, S Mita, J Xie, M Feneberg, B Neuschl, ... Journal of The Electrochemical Society 158 (5), H530, 2011 | 172 | 2011 |
| Seeded growth of AlN bulk crystals in m-and c-orientation P Lu, R Collazo, RF Dalmau, G Durkaya, N Dietz, B Raghothamachar, ... Journal of Crystal Growth 312 (1), 58-63, 2009 | 169 | 2009 |
| High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates Z Bryan, I Bryan, J Xie, S Mita, Z Sitar, R Collazo Applied Physics Letters 106 (14), 2015 | 166 | 2015 |
| Surface preparation and homoepitaxial deposition of AlN on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition A Rice, R Collazo, J Tweedie, R Dalmau, S Mita, J Xie, Z Sitar Journal of Applied Physics 108 (4), 2010 | 159 | 2010 |
| Surface kinetics in AlN growth: A universal model for the control of surface morphology in III-nitrides I Bryan, Z Bryan, S Mita, A Rice, J Tweedie, R Collazo, Z Sitar Journal of Crystal Growth 438, 81-89, 2016 | 156 | 2016 |
| Influence of gallium supersaturation on the properties of GaN grown by metalorganic chemical vapor deposition S Mita, R Collazo, A Rice, RF Dalmau, Z Sitar Journal of Applied Physics 104 (1), 2008 | 149 | 2008 |
| The role of surface kinetics on composition and quality of AlGaN I Bryan, Z Bryan, S Mita, A Rice, L Hussey, C Shelton, J Tweedie, ... Journal of Crystal Growth 451, 65-71, 2016 | 138 | 2016 |
| Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD I Bryan, Z Bryan, S Washiyama, P Reddy, B Gaddy, B Sarkar, ... Applied Physics Letters 112 (6), 2018 | 134 | 2018 |
| Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures J Xie, S Mita, Z Bryan, W Guo, L Hussey, B Moody, R Schlesser, R Kirste, ... Applied Physics Letters 102 (17), 2013 | 134 | 2013 |
| On compensation in Si-doped AlN JS Harris, JN Baker, BE Gaddy, I Bryan, Z Bryan, KJ Mirrielees, P Reddy, ... Applied Physics Letters 112 (15), 2018 | 130 | 2018 |
| Polarity control in group-III nitrides beyond pragmatism S Mohn, N Stolyarchuk, T Markurt, R Kirste, MP Hoffmann, R Collazo, ... Physical Review Applied 5 (5), 054004, 2016 | 125 | 2016 |
| Growth of Ga-and N-polar gallium nitride layers by metalorganic vapor phase epitaxy on sapphire wafers R Collazo, S Mita, A Aleksov, R Schlesser, Z Sitar Journal of crystal growth 287 (2), 586-590, 2006 | 109 | 2006 |
| Vacancy compensation and related donor-acceptor pair recombination in bulk AlN BE Gaddy, Z Bryan, I Bryan, R Kirste, J Xie, R Dalmau, B Moody, ... Applied Physics Letters 103 (16), 2013 | 107 | 2013 |
| The effect of polarity and surface states on the Fermi level at III-nitride surfaces P Reddy, I Bryan, Z Bryan, W Guo, L Hussey, R Collazo, Z Sitar Journal of Applied Physics 116 (12), 2014 | 101 | 2014 |
| Seeded growth of AlN on N-and Al-polar< 0001> AlN seeds by physical vapor transport ZG Herro, D Zhuang, R Schlesser, R Collazo, Z Sitar Journal of crystal growth 286 (2), 205-208, 2006 | 99 | 2006 |
| KOH based selective wet chemical etching of AlN, AlxGa1− xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode W Guo, R Kirste, I Bryan, Z Bryan, L Hussey, P Reddy, J Tweedie, ... Applied Physics Letters 106 (8), 2015 | 97 | 2015 |
Zlatko SitarKobe Steel Distinguished Professor of Materials Science and Engineerign, North Carolina State在 ncsu.edu 的电子邮件经过验证
