| Characteristics of stacked gate-all-around Si nanosheet MOSFETs with metal sidewall source/drain and their impacts on CMOS circuit properties WL Sung, Y Li IEEE Transactions on Electron Devices 68 (6), 3124-3128, 2021 | 34 | 2021 |
| Machine learning aided device simulation of work function fluctuation for multichannel gate-all-around silicon nanosheet MOSFETs C Akbar, Y Li, WL Sung IEEE Transactions on Electron Devices 68 (11), 5490-5497, 2021 | 31 | 2021 |
| DC/AC/RF characteristic fluctuations induced by various random discrete dopants of gate-all-around silicon nanowire n-MOSFETs WL Sung, Y Li IEEE Transactions on Electron Devices 65 (6), 2638-2646, 2018 | 25 | 2018 |
| Deep learning algorithms for the work function fluctuation of random nanosized metal grains on gate-all-around silicon nanowire MOSFETs C Akbar, Y Li, WL Sung IEEE Access 9, 73467-73481, 2021 | 22 | 2021 |
| Deep learning approach to inverse grain pattern of nanosized metal gate for multichannel gate-all-around silicon nanosheet MOSFETs C Akbar, Y Li, WL Sung IEEE Transactions on Semiconductor Manufacturing 34 (4), 513-520, 2021 | 19 | 2021 |
| Work-function fluctuation of gate-all-around silicon nanowire n-MOSFETs: A unified comparison between cuboid and Voronoi methods WL Sung, YS Yang, Y Li IEEE Journal of the Electron Devices Society 9, 151-159, 2020 | 18 | 2020 |
| Significance of work function fluctuations in SiGe/Si hetero-nanosheet tunnel-FET at sub-3 nm nodes N Thoti, Y Li, WL Sung IEEE Transactions on Electron Devices 69 (1), 434-438, 2021 | 16 | 2021 |
| Effects of random number and location of the nanosized metal grains on the threshold voltage variability of silicon gate-all-around nanowire n-type metal-oxide … WL Sung, Y Li Journal of Computational Electronics 19, 1478-1484, 2020 | 6 | 2020 |
| Statistical device simulation of characteristic fluctuation of 10-nm gate-all-around silicon nanowire MOSFETs induced by various discrete random dopants WL Sung, HT Chang, CY Chen, PJ Chao, Y Li 2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO), 951-954, 2016 | 6 | 2016 |
| Transfer learning approach to analyzing the work function fluctuation of gate-all-around silicon nanofin field-effect transistors C Akbar, Y Li, WL Sung Computers and Electrical Engineering 103, 108392, 2022 | 4 | 2022 |
| Statistical Prediction of Nanosized-Metal-Grain-Induced Threshold-Voltage Variability for 3D Vertically Stacked Silicon Gate-All-Around Nanowire n-MOSFETs WL Sung, Y Li Journal of Electronic Materials 49, 6865-6871, 2020 | 4 | 2020 |
| Asymmetric characteristic fluctuation of undoped gate-all-around nanowire MOSFETs induced by random discrete dopants inside source/drain extensions WL Sung, Y Li 2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO), 101-104, 2017 | 3 | 2017 |
| Application of deep artificial neural network to model characteristic fluctuation of multi-channel gate-all-around silicon nanosheet and nanofin MOSFETs induced by random … S Dash, Y Li, WL Sung 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2023 | 2 | 2023 |
| A nanosized-metal-grain pattern-dependent model for work-function fluctuation of gate-all-around silicon nanofin and nanosheet MOSFETs WL Sung, Y Li 2022 International Symposium on VLSI Technology, Systems and Applications …, 2022 | 2 | 2022 |
| A nanosized-metal-grain pattern-dependent threshold voltage model for the work function fluctuation of GAA Si NW MOSFETs WL Sung, Y Li IEEE Access 9, 168613-168623, 2021 | 2 | 2021 |
| Timing and power fluctuations on gate-all-around nanowire CMOS circuit induced by various sources of random discrete dopants WL Sung, PJ Chao, Y Li 2017 International Conference on Simulation of Semiconductor Processes and …, 2017 | 2 | 2017 |
| Nanosized-Metal-Grain-Pattern-Dependent Threshold-Voltage Models for the Vertically Stacked Multichannel Gate-All-Around Si Nanosheet MOSFETs and Their Applications in Circuit … WL Sung, Y Li, MH Chuang IEEE Transactions on Electron Devices, 2023 | 1 | 2023 |
| Intelligent Modeling of Electrical Characteristics of Multi-Channel Gate All Around Silicon Nanosheet MOSFETs Induced by Work Function Fluctuation C Akbar, Y Li, WL Sung 2022 IEEE 22nd International Conference on Nanotechnology (NANO), 261-264, 2022 | 1 | 2022 |
| Variability of Threshold Voltage Induced by Work-Function Fluctuation and Random Dopant Fluctuation on Gate-All-Around Nanowire nMOSFETs WL Sung, MH Chuang, Y Li 2019 International Conference on Simulation of Semiconductor Processes and …, 2019 | 1 | 2019 |
| A Hybrid 1D-CNN-LSTM Technique for WKF-Induced Variability of Multi-Channel GAA NS-and NF-FETs S Dash, Y Li, WL Sung IEEE Access 11, 56619-56633, 2023 | | 2023 |
Sekhar Reddy KolaNational Yang Ming Chiao Tung University, National Chiao Tung University在 nycu.edu.tw 的电子邮件经过验证
Sekhar Reddy KolaNational Yang Ming Chiao Tung University, National Chiao Tung University在 nycu.edu.tw 的电子邮件经过验证