| A microprocessor based on a two-dimensional semiconductor S Wachter, DK Polyushkin, O Bethge, T Mueller Nature communications 8 (1), 14948, 2017 | 404 | 2017 |
| Controlled generation of ap–n junction in a waveguide integrated graphene photodetector S Schuler, D Schall, D Neumaier, L Dobusch, O Bethge, B Schwarz, ... Nano letters 16 (11), 7107-7112, 2016 | 228 | 2016 |
| Modeling small-signal response of GaN-based metal-insulator-semiconductor high electron mobility transistor gate stack in spill-over regime: Effect of barrier resistance and … M Capriotti, P Lagger, C Fleury, M Oposich, O Bethge, C Ostermaier, ... Journal of Applied Physics 117 (2), 2015 | 60 | 2015 |
| All-oxide solar cells based on electrodeposited Cu2O absorber and atomic layer deposited ZnMgO on precious-metal-free electrode J Kaur, O Bethge, RA Wibowo, N Bansal, M Bauch, R Hamid, ... Solar Energy Materials and Solar Cells 161, 449-459, 2017 | 58 | 2017 |
| Fixed interface charges between AlGaN barrier and gate stack composed of in situ grown SiN and Al2O3 in AlGaN/GaN high electron mobility transistors with normally off capability M Capriotti, A Alexewicz, C Fleury, M Gavagnin, O Bethge, D Visalli, ... Applied Physics Letters 104 (11), 2014 | 48 | 2014 |
| Atomic layer deposition of ZrO2/La2O3 high-k dielectrics on germanium reaching 0.5 nm equivalent oxide thickness S Abermann, O Bethge, C Henkel, E Bertagnolli Applied Physics Letters 94 (26), 2009 | 41 | 2009 |
| Atomic layer-deposited platinum in high-k/metal gate stacks C Henkel, S Abermann, O Bethge, E Bertagnolli Semiconductor science and technology 24 (12), 125013, 2009 | 38 | 2009 |
| Stability of La2O3 and GeO2 passivated Ge surfaces during ALD of ZrO2 high-k dielectric O Bethge, C Henkel, S Abermann, G Pozzovivo, M Stoeger-Pollach, ... Applied surface science 258 (8), 3444-3449, 2012 | 32 | 2012 |
| Zirconium dioxide nanolayer passivated impedimetric sensors for cell-based assays D Sticker, M Rothbauer, V Charwat, J Steinkuehler, O Bethge, ... Sensors and Actuators B: Chemical 213, 35-44, 2015 | 27 | 2015 |
| ALD grown bilayer junction of ZnO: Al and tunnel oxide barrier for SIS solar cell O Bethge, M Nobile, S Abermann, M Glaser, E Bertagnolli Solar energy materials and solar cells 117, 178-182, 2013 | 27 | 2013 |
| Current collapse reduction in InAlN/GaN MOS HEMTs by in situ surface pre-treatment and atomic layer deposition of ZrO2 high-k gate dielectrics S Abermann, G Pozzovivo, J Kuzmik, C Ostermaier, C Henkel, O Bethge, ... Electronics letters 45 (11), 570-572, 2009 | 27 | 2009 |
| Stabilization of a very high-k crystalline ZrO2 phase by post deposition annealing of atomic layer deposited ZrO2/La2O3 dielectrics on germanium S Abermann, C Henkel, O Bethge, G Pozzovivo, P Klang, E Bertagnolli Applied Surface Science 256 (16), 5031-5034, 2010 | 26 | 2010 |
| Artificial cilia of magnetically tagged polymer nanowires for biomimetic mechanosensing P Schroeder, J Schotter, A Shoshi, M Eggeling, O Bethge, A Hütten, ... Bioinspiration & Biomimetics 6 (4), 046007, 2011 | 24 | 2011 |
| Process temperature dependent high frequency capacitance-voltage response of ZrO2/GeO2/germanium capacitors O Bethge, S Abermann, C Henkel, CJ Straif, H Hutter, J Smoliner, ... Applied Physics Letters 96 (5), 2010 | 24 | 2010 |
| Ge p-MOSFETs With Scaled ALD Gate Dielectrics C Henkel, S Abermann, O Bethge, G Pozzovivo, P Klang, M Reiche, ... IEEE transactions on electron devices 57 (12), 3295-3302, 2010 | 23 | 2010 |
| Pt-assisted oxidation of (100)-Ge/high-k interfaces and improvement of their electrical quality C Henkel, O Bethge, S Abermann, S Puchner, H Hutter, E Bertagnolli Applied Physics Letters 97 (15), 2010 | 23 | 2010 |
| Effective reduction of trap density at the Y2O3/Ge interface by rigorous high-temperature oxygen annealing O Bethge, C Zimmermann, B Lutzer, S Simsek, J Smoliner, ... Journal of Applied Physics 116 (21), 2014 | 22 | 2014 |
| Streptavidin binding as a model to characterize thiol–ene chemistry-based polyamine surfaces for reversible photonic protein biosensing E Melnik, P Muellner, O Bethge, E Bertagnolli, R Hainberger, ... Chemical Communications 50 (19), 2424-2427, 2014 | 22 | 2014 |
| Schottky barrier SOI-MOSFETs with high-k La2O3/ZrO2 gate dielectrics C Henkel, S Abermann, O Bethge, G Pozzovivo, P Klang, ... Microelectronic engineering 88 (3), 262-267, 2011 | 21 | 2011 |
| Tip geometry effects in scanning capacitance microscopy on GaAs Schottky and metal-oxide-semiconductor-type junctions C Eckhardt, W Brezna, O Bethge, E Bertagnolli, J Smoliner Journal of Applied Physics 105 (11), 2009 | 21 | 2009 |
