| Electrochemical metallization memories—fundamentals, applications, prospects I Valov, R Waser, JR Jameson, MN Kozicki Nanotechnology 22 (25), 254003, 2011 | 1210 | 2011 |
| Bipolar resistive switching in polycrystalline TiO2 films K Tsunoda, Y Fukuzumi, JR Jameson, Z Wang, PB Griffin, Y Nishi Applied physics letters 90 (11), 113501-113501-3, 2007 | 254 | 2007 |
| Field-programmable rectification in rutile TiO2 crystals JR Jameson, Y Fukuzumi, Z Wang, P Griffin, K Tsunoda, GI Meijer, Y Nishi Applied Physics Letters 91 (11), 112101-112101-3, 2007 | 123 | 2007 |
| Neuroinspired unsupervised learning and pruning with subquantum CBRAM arrays Y Shi, L Nguyen, S Oh, X Liu, F Koushan, JR Jameson, D Kuzum Nature communications 9 (1), 5312, 2018 | 114 | 2018 |
| Quantized Conductance inConductive-Bridge Memory Cells JR Jameson, N Gilbert, F Koushan, J Saenz, J Wang, S Hollmer, ... IEEE electron device letters 33 (2), 257-259, 2012 | 102 | 2012 |
| Conductive-bridge memory (CBRAM) with excellent high-temperature retention JR Jameson, P Blanchard, C Cheng, J Dinh, A Gallo, V Gopalakrishnan, ... Electron Devices Meeting (IEDM), 2013 IEEE International, 30.1. 1-30.1. 4, 2013 | 82 | 2013 |
| Length dependence of current-induced breakdown in carbon nanofiber interconnects H Kitsuki, T Yamada, D Fabris, JR Jameson, P Wilhite, M Suzuki, ... Applied Physics Letters 92 (17), 2008 | 68 | 2008 |
| One-dimensional model of the programming kinetics of conductive-bridge memory cells JR Jameson, N Gilbert, F Koushan, J Saenz, J Wang, S Hollmer, ... Applied Physics Letters 99 (6), 2011 | 67 | 2011 |
| Atomic scale effects of zirconium and hafnium incorporation at a model silicon/silicate interface by first principles calculations A Kawamoto, J Jameson, P Griffin, K Cho, R Dutton IEEE Electron Device Letters 22 (1), 14-16, 2001 | 64 | 2001 |
| Double-well model of dielectric relaxation current JR Jameson, W Harrison, PB Griffin, JD Plummer Applied physics letters 84 (18), 3489-3491, 2004 | 47 | 2004 |
| Charge Trapping in High-k Gate Stacks Due to the Bilayer Structure Itself JR Jameson, PB Griffin, JD Plummer, Y Nishi Electron Devices, IEEE Transactions on 53 (8), 1858-1867, 2006 | 45 | 2006 |
| Subquantum conductive-bridge memory JR Jameson, D Kamalanathan Applied Physics Letters 108 (5), 2016 | 40 | 2016 |
| Challenges for atomic scale modeling in alternative gate stack engineering A Kawamoto, J Jameson, K Cho, RW Dutton IEEE Transactions on Electron Devices 47 (10), 1787-1794, 2000 | 33 | 2000 |
| Circuit modeling of high-frequency electrical conduction in carbon nanofibers FR Madriz, JR Jameson, S Krishnan, X Sun, CY Yang IEEE transactions on electron devices 56 (8), 1557-1561, 2009 | 31 | 2009 |
| Effects of cooperative ionic motion on programming kinetics of conductive-bridge memory cells JR Jameson, N Gilbert, F Koushan, J Saenz, J Wang, S Hollmer, ... Applied Physics Letters 100 (2), 2012 | 30 | 2012 |
| Resistive switching devices having alloyed electrodes and methods of formation thereof WT Lee, C Gopalan, Y Ma, J Shields, P Blanchard, JR Jameson, ... US Patent 8,847,192, 2014 | 25 | 2014 |
| Recent progress in resistance change memory Y Nishi, JR Jameson 2008 Device Research Conference, 271-274, 2008 | 25 | 2008 |
| Conductive bridging RAM (CBRAM): then, now, and tomorrow JR Jameson, P Blanchard, J Dinh, N Gonzales, V Gopalakrishnan, ... ECS Transactions 75 (5), 41, 2016 | 21 | 2016 |
| Role of hydrogen ions in TiO2-based memory devices JR Jameson, Y Nishi Integrated Ferroelectrics 124 (1), 112-118, 2011 | 21 | 2011 |
| A semiclassical model of dielectric relaxation in glasses JR Jameson, W Harrison, PB Griffin, JD Plummer, Y Nishi Journal of applied physics 100 (12), 2006 | 21 | 2006 |
Yoshio NishiElectrical Engineering, Stanford University在 stanford.edu 的电子邮件经过验证
