| Silicon carbide power transistors: A new era in power electronics is initiated J Rabkowski, D Peftitsis, HP Nee IEEE Industrial Electronics Magazine 6 (2), 17-26, 2012 | 465 | 2012 |
| High-power modular multilevel converters with SiC JFETs D Peftitsis, G Tolstoy, A Antonopoulos, J Rabkowski, JK Lim, M Bakowski, ... IEEE Transactions on Power Electronics 27 (1), 28-36, 2011 | 230 | 2011 |
| Short-circuit protection circuits for silicon-carbide power transistors DP Sadik, J Colmenares, G Tolstoy, D Peftitsis, M Bakowski, J Rabkowski, ... IEEE transactions on industrial electronics 63 (4), 1995-2004, 2015 | 184 | 2015 |
| Challenges regarding parallel connection of SiC JFETs D Peftitsis, R Baburske, J Rabkowski, J Lutz, G Tolstoy, HP Nee IEEE Transactions on Power Electronics 28 (3), 1449-1463, 2012 | 145 | 2012 |
| Gate and base drivers for silicon carbide power transistors: An overview D Peftitsis, J Rabkowski IEEE Transactions on Power Electronics 31 (10), 7194-7213, 2015 | 126 | 2015 |
| Low-loss high-performance base-drive unit for SiC BJTs J Rabkowski, G Tolstoy, D Peftitsis, HP Nee IEEE Transactions on Power Electronics 27 (5), 2633-2643, 2011 | 108 | 2011 |
| Experimental investigations of static and transient current sharing of parallel-connected silicon carbide MOSFETs DP Sadik, J Colmenares, D Peftitsis, JK Lim, J Rabkowski, HP Nee 2013 15th European Conference on Power Electronics and Applications (EPE), 1-10, 2013 | 107 | 2013 |
| High-efficiency 312-kVA three-phase inverter using parallel connection of silicon carbide MOSFET power modules J Colmenares, D Peftitsis, J Rabkowski, DP Sadik, G Tolstoy, HP Nee IEEE Transactions on Industry Applications 51 (6), 4664-4676, 2015 | 73 | 2015 |
| Parallel-operation of discrete SiC BJTs in a 6-kW/250-kHz DC/DC boost converter J Rabkowski, D Peftitsis, HP Nee IEEE transactions on power electronics 29 (5), 2482-2491, 2013 | 70 | 2013 |
| Design steps toward a 40-kVA SiC JFET inverter with natural-convection cooling and an efficiency exceeding 99.5% J Rabkowski, D Peftitsis, HP Nee IEEE Transactions on Industry Applications 49 (4), 1589-1598, 2013 | 59 | 2013 |
| Design steps towards a 40-kVA SiC inverter with an efficiency exceeding 99.5% J Rabkowski, D Peftitsis, HP Nee 2012 Twenty-Seventh Annual IEEE Applied Power Electronics Conference and …, 2012 | 56 | 2012 |
| Analysis and experimental verification of the influence of fabrication process tolerances and circuit parasitics on transient current sharing of parallel-connected SiC JFETs JK Lim, D Peftitsis, J Rabkowski, M Bakowski, HP Nee IEEE Transactions on Power Electronics 29 (5), 2180-2191, 2013 | 55 | 2013 |
| Self-powered gate driver for normally on silicon carbide junction field-effect transistors without external power supply D Peftitsis, J Rabkowski, HP Nee IEEE Transactions on Power Electronics 28 (3), 1488-1501, 2012 | 54 | 2012 |
| Design and evaluation of reduced self-capacitance inductor in DC/DC converters with fast-switching SiC transistors M Zdanowski, K Kostov, J Rabkowski, R Barlik, HP Nee IEEE transactions on power electronics 29 (5), 2492-2499, 2013 | 48 | 2013 |
| On the design process of a 6-kVA quasi-Z-inverter employing SiC power devices M Zdanowski, D Peftitsis, S Piasecki, J Rabkowski IEEE Transactions on Power Electronics 31 (11), 7499-7508, 2016 | 46 | 2016 |
| Pulse Width Modulation methods for bidirectional/high-performance Z-source inverter J Rabkowski, R Barlik, M Nowak 2008 IEEE Power Electronics Specialists Conference, 2750-2756, 2008 | 44 | 2008 |
| Comparison of the power losses in 1700V Si IGBT and SiC MOSFET modules including reverse conduction J Rąbkowski, T Płatek 2015 17th European Conference on Power Electronics and Applications (EPE'15 …, 2015 | 41 | 2015 |
| A discretized proportional base driver for silicon carbide bipolar junction transistors G Tolstoy, D Peftitsis, J Rabkowski, PR Palmer, HP Nee IEEE Transactions on Power Electronics 29 (5), 2408-2417, 2013 | 38 | 2013 |
| Analysis of short-circuit conditions for silicon carbide power transistors and suggestions for protection DP Sadik, J Colmenares, D Peftitsis, G Tolstoy, J Rabkowski, HP Nee 2014 16th European Conference on Power Electronics and Applications, 1-10, 2014 | 35 | 2014 |
| Experimental comparison of dc-dc boost converters with SiC JFETs and SiC bipolar transistors D Peftitsis, J Rabkowski, G Tolstoy, HP Nee Proceedings of the 2011 14th European Conference on Power Electronics and …, 2011 | 33 | 2011 |
Dimosthenis PeftitsisProfessor of Power Electronics at NTNU, Norwegian University of Science and Technology在 ntnu.no 的电子邮件经过验证
