| Laser operation of a heterojunction bipolar light-emitting transistor G Walter, N Holonyak, M Feng, R Chan Applied physics letters 85 (20), 4768-4770, 2004 | 187 | 2004 |
| Room temperature continuous wave operation of a heterojunction bipolar transistor laser M Feng, N Holonyak, G Walter, R Chan Applied physics letters 87 (13), 2005 | 184 | 2005 |
| Low-actuation voltage RF MEMS shunt switch with cold switching lifetime of seven billion cycles R Chan, R Lesnick, D Becher, M Feng Journal of Microelectromechanical Systems 12 (5), 713-719, 2003 | 170 | 2003 |
| Quantum-well-base heterojunction bipolar light-emitting transistor M Feng, N Holonyak Jr, R Chan Applied physics letters 84 (11), 1952-1954, 2004 | 142 | 2004 |
| Carrier lifetime and modulation bandwidth of a quantum well transistor laser M Feng, N Holonyak Jr, A James, K Cimino, G Walter, R Chan Applied physics letters 89 (11), 113504, 2006 | 89* | 2006 |
| Reliability study of low-voltage RF MEMS switches D Becher, R Chan, M Hattendorf, M Feng GaAsMANTECH Conference 4, 2002 | 49 | 2002 |
| Microwave operation and modulation of a transistor laser R Chan, M Feng, N Holonyak, G Walter Applied physics letters 86 (13), 2005 | 48 | 2005 |
| ROM-based direct digital synthesizer at 24 GHz clock frequency in InP DHBT technology SE Turner, RT Chan, JT Feng IEEE Microwave and Wireless Components Letters 18 (8), 566-568, 2008 | 44 | 2008 |
| Collector current map of gain and stimulated recombination on the base quantum well transitions of a transistor laser R Chan, M Feng, N Holonyak, A James, G Walter Applied physics letters 88 (14), 2006 | 44 | 2006 |
| PNP light emitting transistor and method G Walter, N Holonyak Jr, M Feng, R Chan US Patent 7,535,034, 2009 | 40 | 2009 |
| Semiconductor laser devices and methods M Feng, N Holonyak Jr, R Chan, G Walter US Patent 7,286,583, 2007 | 33 | 2007 |
| Semiconductor light emitting devices and methods M Feng, N Holonyak Jr, R Chan US Patent 7,354,780, 2008 | 32 | 2008 |
| Signal mixing in a multiple input transistor laser near threshold M Feng, N Holonyak, R Chan, A James, G Walter Applied physics letters 88 (6), 2006 | 31 | 2006 |
| Type-II GaAsSb/InP heterojunction bipolar light-emitting transistor M Feng, N Holonyak Jr, B Chu-Kung, G Walter, R Chan Applied physics letters 84 (23), 4792-4794, 2004 | 24 | 2004 |
| High cycle deflection beam MEMS devices M Feng, R Chan US Patent 6,998,946, 2006 | 16 | 2006 |
| Total dose and SEE of metal-to-metal antifuse FPGA JJ Wang, B Cronquist, J McCollum, F Hawley, D Yu, R Chan, R Katz, ... Notes 80 (100), 120, 2023 | 15 | 2023 |
| Semiconductor laser devices and methods M Feng, N Holonyak, R Chan, G Walter US Patent App. 11/974,323, 2008 | 15 | 2008 |
| Collector breakdown in the heterojunction bipolar transistor laser G Walter, A James, N Holonyak, M Feng, R Chan Applied physics letters 88 (23), 2006 | 15 | 2006 |
| High linearity bandgap engineered transistor RT Chan US Patent 8,823,011, 2014 | 13 | 2014 |
| Semiconductor light emitting devices and methods M Feng, N Holonyak Jr, R Chan US Patent 7,693,195, 2010 | 11 | 2010 |
