| Enhanced Thermionic Emission and Low 1/f Noise in Exfoliated Graphene/GaN Schottky Barrier Diode A Kumar, R Kashid, A Ghosh, V Kumar, R Singh ACS Applied Materials & Interfaces 8 (12), 8213-8223, 2016 | 62 | 2016 |
| Barrier inhomogeneities limited current and 1/f noise transport in GaN based nanoscale Schottky barrier diodes A Kumar, M Heilmann, M Latzel, R Kapoor, I Sharma, M Göbelt, ... Scientific reports 6 (1), 27553, 2016 | 40 | 2016 |
| Temperature dependence of 1/f noise in Ni/n-GaN Schottky barrier diode A Kumar, K Asokan, V Kumar, R Singh Journal of Applied Physics 112 (2), 2012 | 36 | 2012 |
| Investigation of significantly high barrier height in Cu/GaN Schottky diode M Garg, A Kumar, S Nagarajan, M Sopanen, R Singh AIP Advances 6 (1), 2016 | 35 | 2016 |
| Effect of rapid thermal annealing on barrier height and 1/f noise of Ni/GaN Schottky barrier diodes A Kumar, M Latzel, S Christiansen, V Kumar, R Singh Applied Physics Letters 107 (9), 2015 | 32 | 2015 |
| Atomic-scale quantitative analysis of implanted Mg in annealed GaN layers on free-standing GaN substrates A Kumar, J Uzuhashi, T Ohkubo, R Tanaka, S Takashima, M Edo, K Hono Journal of Applied Physics 126 (23), 2019 | 25 | 2019 |
| Influence of implanted Mg concentration on defects and Mg distribution in GaN A Kumar, W Yi, J Uzuhashi, T Ohkubo, J Chen, T Sekiguchi, R Tanaka, ... Journal of Applied Physics 128 (6), 2020 | 23 | 2020 |
| Comparative analysis of defects in Mg-implanted and Mg-doped GaN layers on freestanding GaN substrates A Kumar, K Mitsuishi, T Hara, K Kimoto, Y Irokawa, T Nabatame, ... Nanoscale Research Letters 13, 1-8, 2018 | 23 | 2018 |
| Mg diffusion and activation along threading dislocations in GaN W Yi, A Kumar, J Uzuhashi, T Kimura, R Tanaka, S Takashima, M Edo, ... Applied Physics Letters 116 (24), 2020 | 17 | 2020 |
| Direct evidence of barrier inhomogeneities at metal/AlGaN/GaN interfaces using nanoscopic electrical characterizations A Kumar, R Kapoor, M Garg, V Kumar, R Singh Nanotechnology 28 (26), 26LT02, 2017 | 17 | 2017 |
| Vertical GaN devices: Process and reliability S You, K Geens, M Borga, H Liang, H Hahn, D Fahle, M Heuken, ... Microelectronics Reliability 126, 114218, 2021 | 13 | 2021 |
| Understanding current transport at the Ni/GaN interface using low-frequency noise spectroscopy A Kumar, V Kumar, R Singh Journal of Physics D: Applied Physics 49 (47), 47LT01, 2016 | 13 | 2016 |
| Temperature dependent electrical studies on Cu/AlGaN/GaN Schottky barrier diodes with its microstructural characterization M Garg, A Kumar, H Sun, CH Liao, X Li, R Singh Journal of Alloys and Compounds 806, 852-857, 2019 | 12 | 2019 |
| Temperature dependent 1/f noise characteristics of the Fe/GaN ferromagnetic Schottky barrier diode A Kumar, S Nagarajan, M Sopanen, V Kumar, R Singh Semiconductor Science and Technology 30 (10), 105022, 2015 | 12 | 2015 |
| Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing J Uzuhashi, J Chen, A Kumar, W Yi, T Ohkubo, R Tanaka, S Takashima, ... Journal of Applied Physics 131 (18), 2022 | 11 | 2022 |
| Blistering kinetics in H-implanted 4H-SiC for large-area exfoliation M Sharma, KK Soni, A Kumar, T Ohkubo, AK Kapoor, R Singh Current Applied Physics 31, 141-150, 2021 | 6 | 2021 |
| Electron-beam-induced current study of dislocations and leakage sites in GaN Schottky barrier diodes J Chen, W Yi, A Kumar, A Iwanade, R Tanaka, S Takashima, M Edo, S Ito, ... Journal of Electronic Materials 49, 5196-5204, 2020 | 4 | 2020 |
| Characterization of GaN nanorods fabricated using Ni nanomasking and reactive ion etching: a top-down approach A Kumar, M Latzel, C Tessarek, S Christiansen, R Singh Сумський державний університет, 2013 | 4 | 2013 |
| Growth of p-type GaN–The role of oxygen in activation of Mg-doping A Kumar, M Berg, Q Wang, M Salter, P Ramvall Power Electronic Devices and Components 5, 100036, 2023 | 3 | 2023 |
| Impact of high-temperature Mg-implantation on defects and dopants distribution in GaN A Kumar, W Yi, T Ohkubo, J Chen, T Sekiguchi, R Tanaka, S Takashima, ... Journal of Applied Physics 133 (18), 2023 | 1 | 2023 |
Rajendra SinghIndian Institute of Technology Delhi在 physics.iitd.ac.in 的电子邮件经过验证
