| Nano-porous GaN cladding and scattering loss in edge emitting laser diodes R Anderson, D Cohen, H Zhang, E Trageser, N Palmquist, S Nakamura, ... Optics Express 30 (2), 2759-2767, 2022 | 25 | 2022 |
| Green edge emitting lasers with porous GaN cladding R Anderson, H Zhang, E Trageser, N Palmquist, M Wong, S Nakamura, ... Optics Express 30 (15), 27674-27682, 2022 | 9 | 2022 |
| Demonstration of yellow (568 nm) stimulated emission from optically pumped InGaN/GaN multi-quantum wells P Li, H Zhang, H Li, T Cohen, R Anderson, MS Wong, E Trageser, ... Applied Physics Letters 121 (7), 2022 | 8 | 2022 |
| Long-cavity M-plane GaN-based vertical-cavity surface-emitting lasers with a topside monolithic curved mirror NC Palmquist, R Anderson, JA Kearns, J Back, E Trageser, S Gee, ... Photonics 10 (6), 646, 2023 | 5 | 2023 |
| Improved wall-plug efficiency of III-nitride tunnel junction micro-light-emitting diodes with AlGaN/GaN polarization charges MS Wong, A Raj, HM Chang, V Rienzi, F Wu, JJ Ewing, ES Trageser, ... AIP Advances 13 (1), 2023 | 5 | 2023 |
| Continuous-wave operation of long-cavity m-plane GaN-based vertical-cavity surface-emitting lasers with a topside curved mirror and nanoporous GaN DBR NC Palmquist, R Anderson, JA Kearns, J Back, E Trageser, S Gee, ... Gallium Nitride Materials and Devices XVIII 12421, 127-135, 2023 | 3 | 2023 |
| Single-frequency DFB laser diodes at visible wavelengths grown with low temperature remote plasma chemical vapor deposition p-AlGaN R Anderson, JD Brown, E Trageser, Q Gao, S Barik, M Wintrebert-Fouquet, ... Gallium Nitride Materials and Devices XVIII 12421, 136-142, 2023 | 3 | 2023 |
| Blue GaN-based DFB laser diode with sub-MHz linewidth E Trageser, H Zhang, S Palmer, T Morin, J Guo, J Zhang, E Geske, ... Optics Express 32 (13), 23372-23380, 2024 | 2 | 2024 |
| III-nitride m-plane violet narrow ridge edge-emitting laser diodes with sidewall passivation using atomic layer deposition MS Wong, ES Trageser, H Zhang, HM Chang, S Gee, T Tak, ... Optics Express 32 (12), 20483-20490, 2024 | 1 | 2024 |
| InGaN/GaN edge emitting laser diodes using an epitaxial lateral overgrowth with a low-defect density area of more than 75% HM Chang, S Gandrothula, S Gee, T Tak, MS Wong, N Palmquist, ... Japanese Journal of Applied Physics, 2024 | | 2024 |
| Green edge-emitting laser diodes with porous GaN cladding and deep ridge waveguiding ES Trageser, M Wong, R Anderson, H Zhang, J Zhang, A Juan, ... Gallium Nitride Materials and Devices XVIII, 2023 | | 2023 |
| Narrow ridge III-nitride m-plane violet edge-emitting laser diodes with sidewall passivation using atomic layer deposition MS Wong, H Zhang, ES Trageser, RM Anderson, JS Speck, S Nakamura, ... Gallium Nitride Materials and Devices XVIII, 2023 | | 2023 |
Steven DenBaarsProfessor of Materials, University of California Santa Barbara在 engineering.ucsb.edu 的电子邮件经过验证
