| AlGaN/GaN-Based Laterally Gated High-Electron-Mobility Transistors With Optimized Linearity O Odabaşı, D Yılmaz, E Aras, KE Asan, S Zafar, BÇ Akoğlu, B Bütün, ... IEEE Transactions on Electron Devices 68 (3), 1016-1023, 2021 | 20 | 2021 |
| GaN based LNA MMICs for X-Band Applications S Zafar, S Osmanoglu, M Ozturk, B Cankaya, D Yilmaz, AU Kashif, ... 2020 17th International Bhurban Conference on Applied Sciences and …, 2020 | 16 | 2020 |
| Effect of gate structures on the DC and RF performance of AlGaN/GaN HEMTs A Toprak, S Osmanoğlu, M Öztürk, D Yılmaz, Ö Cengiz, Ö Şen, B Bütün, ... Semiconductor Science and Technology 33 (12), 125017, 2018 | 15 | 2018 |
| Design and robustness improvement of high‐performance LNA using 0.15 μm GaN technology for X‐band applications S Zafar, B Cankaya Akoglu, E Aras, D Yilmaz, MI Nawaz, A Kashif, ... International Journal of Circuit Theory and Applications, 2022 | 8 | 2022 |
| AlGaN/GaN HEMT with fT: 100GHz and fmax: 128GHz Y Durmus, D Yilmaz, A Toprak, AB Turhan, OA Sen, E Ozbay 2015 10th European Microwave Integrated Circuits Conference (EuMIC), 199-202, 2015 | 7 | 2015 |
| DC and RF performance of lateral AlGaN/GaN FinFET with ultrathin gate dielectric D Yilmaz, O Odabaşı, G Salkim, E Urfalı, BÇ Akoğlu, E Ozbay, Ş Altındal Semiconductor Science and Technology, 2022 | 5 | 2022 |
| The effect of post-metal annealing on DC and RF performance of AlGaN/GaN HEMT BÇ Akoğlu, D Yilmaz, G Salkim, E Özbay Engineering Research Express, 2022 | 3 | 2022 |
| Selectively dry etched of p-GaN/InAlN heterostructures using BCI3-based plasma for normally-off HEMT technology A Toprak, D Yılmaz, E Özbay Materials Research Express 8 (12), 126302, 2021 | 3 | 2021 |
| A study on GaN-based betavoltaic batteries A Toprak, D Yılmaz, E Özbay Semiconductor Science and Technology 37 (12), 125005, 2022 | 2 | 2022 |
| GaN-based Single Stage Low Noise Amplifier for X-band Applications GT Çağlar, YE Aras, E Urfalı, D Yılmaz, E Özbay, S Nazlıbilek MMS2022: MEDITERRANEAN MICROWAVE SYMPOSIUM 2022, 2022 | 2 | 2022 |
| Effect of Deposition Technique of SiNx Passivation Layer on the Electrical DC and RF Properties of AlGaN/GaN HEMTs Y Güler, B Onaylı, MT Haliloğlu, D Yılmaz, T Asar, E Özbay Transactions on Electrical and Electronic Materials, 1-7, 2023 | | 2023 |
| Optimization of GaN-based FinFET structure for high power electronics applications D YILMAZ GAZİ UNIVERSITY, GRADUATE SCHOOL OF NATURAL AND APPLIED SCIENCES,, 2022 | | 2022 |
| The method of fabrication for reliable and reproducible AlGaN/GaN FinFETs on SiC D Yilmaz, G Salkım, Y Durmus, T Haliloglu, E Ozbay, S Altundal 48th Micro and Nano Engineering Conference (MNE2022), 2022 | | 2022 |
| AlGaN/GaN HEMT Arka Yüz Fabrikasyonu G Başar, F Aydın, M Bellikli, T Haliloğlu, D Yılmaz, E Özbay 26. Yoğun Madde Fiziği, 2021 | | 2021 |
| S band Uygulamaları için AlGaN/GaN HEMT Ön Yüz Fabrikasyonu B Onaylı, A Savaş, B Öztürk, D Yılmaz, E Özbay 26. Yoğun Madde Fiziği, 2021 | | 2021 |
| Hava-boşluklu Gama Gate Yapılar Kullanarak 8 GHz'de 7,6 W/mm Güç Yoğunluğuna Sahip AlGaN/GaN HEMT Aygıtların Üretilmesi A Toprak, D Yılmaz, E Özbay 26. Yoğun Madde Fiziği, 2021 | | 2021 |
| K-Band uygulamaları için GaN temelli yüksek elektron mobiliteli transistör (HEMT) Y DURMUŞ, V BARIŞ, S ÇELİK, G TENDÜRÜS, BÇ AKAOĞLU, ... 1st INTERNATIONAL MICROSCOPY and SPECTROSCOPY CONGRESS, 2021 | | 2021 |
| Effect of surface treatment on the SiN passivation of AlGaN/GaN HEMT G Karaca, İ Karakuş, E Alagöz, AS Dinçer, D Yılmaz, E Özbay 1st INTERNATIONAL MICROSCOPY and SPECTROSCOPY CONGRESS, 2021 | | 2021 |
| ALD grown AZO contacts for AlGaN/GaN HEMT Device Applications H Cakmak, D Tugrul, H Esen, D Yilmaz, E Özbay, MB İmer | | 2020 |
| Aluminum Doped Zinc Oxide by Atomic Layer Deposition for Device Applications H Çakmak, D Yılmaz, M Öztürk, MB İmer, E Özbay null, 2019 | | 2019 |
