| Template-assisted selective epitaxy of III–V nanoscale devices for co-planar heterogeneous integration with Si H Schmid, M Borg, K Moselund, L Gignac, CM Breslin, J Bruley, D Cutaia, ... Applied Physics Letters 106 (23), 2015 | 253 | 2015 |
| High‐quality InAs/InSb nanowire heterostructures grown by metal–organic vapor‐phase epitaxy P Caroff, JB Wagner, KA Dick, HA Nilsson, M Jeppsson, K Deppert, ... Small 4 (7), 878-882, 2008 | 213 | 2008 |
| InAs/GaSb heterostructure nanowires for tunnel field-effect transistors BM Borg, KA Dick, B Ganjipour, ME Pistol, LE Wernersson, C Thelander Nano letters 10 (10), 4080-4085, 2010 | 193 | 2010 |
| Controlling the abruptness of axial heterojunctions in III–V nanowires: beyond the reservoir effect KA Dick, J Bolinsson, BM Borg, J Johansson Nano letters 12 (6), 3200-3206, 2012 | 181 | 2012 |
| Vertical III–V nanowire device integration on Si (100) M Borg, H Schmid, KE Moselund, G Signorello, L Gignac, J Bruley, ... Nano letters 14 (4), 1914-1920, 2014 | 178 | 2014 |
| InSb heterostructure nanowires: MOVPE growth under extreme lattice mismatch P Caroff, ME Messing, BM Borg, KA Dick, K Deppert, LE Wernersson Nanotechnology 20 (49), 495606, 2009 | 178 | 2009 |
| Diameter-dependent photocurrent in InAsSb nanowire infrared photodetectors J Svensson, N Anttu, N Vainorius, BM Borg, LE Wernersson Nano letters 13 (4), 1380-1385, 2013 | 174 | 2013 |
| High-current GaSb/InAs (Sb) nanowire tunnel field-effect transistors AW Dey, BM Borg, B Ganjipour, M Ek, KA Dick, E Lind, C Thelander, ... IEEE Electron device letters 34 (2), 211-213, 2013 | 145 | 2013 |
| Vertical InAs Nanowire Wrap Gate Transistors with ft > 7 GHz and fmax > 20 GHz M Egard, S Johansson, AC Johansson, KM Persson, AW Dey, BM Borg, ... Nano Letters 10 (3), 809-812, 2010 | 135 | 2010 |
| High current density Esaki tunnel diodes based on GaSb-InAsSb heterostructure nanowires B Ganjipour, AW Dey, BM Borg, M Ek, ME Pistol, KA Dick, LE Wernersson, ... Nano letters 11 (10), 4222-4226, 2011 | 122 | 2011 |
| Synthesis and properties of antimonide nanowires BM Borg, LE Wernersson Nanotechnology 24 (20), 202001, 2013 | 120 | 2013 |
| GaAs/GaSb nanowire heterostructures grown by MOVPE M Jeppsson, KA Dick, JB Wagner, P Caroff, K Deppert, L Samuelson, ... Journal of Crystal Growth 310 (18), 4115-4121, 2008 | 116 | 2008 |
| Single InAs/GaSb nanowire low-power CMOS inverter AW Dey, J Svensson, BM Borg, M Ek, LE Wernersson Nano letters 12 (11), 5593-5597, 2012 | 104 | 2012 |
| High transconductance self-aligned gate-last surface channel In0.53Ga0.47As MOSFET M Egard, L Ohlsson, BM Borg, F Lenrick, R Wallenberg, LE Wernersson, ... 2011 International Electron Devices Meeting, 13.2. 1-13.2. 4, 2011 | 95 | 2011 |
| Lateral InAs/Si p-type tunnel FETs integrated on Si—Part 2: Simulation study of the impact of interface traps S Sant, K Moselund, D Cutaia, H Schmid, M Borg, H Riel, A Schenk IEEE Transactions on Electron Devices 63 (11), 4240-4247, 2016 | 90 | 2016 |
| Analysis of strain and stacking faults in single nanowires using Bragg coherent diffraction imaging V Favre-Nicolin, F Mastropietro, J Eymery, D Camacho, YM Niquet, ... New Journal of Physics 12 (3), 035013, 2010 | 89 | 2010 |
| High-performance inas nanowire mosfets AW Dey, C Thelander, E Lind, KA Dick, BM Borg, M Borgstrom, P Nilsson, ... IEEE Electron Device Letters 33 (6), 791-793, 2012 | 79 | 2012 |
| Enhanced Sb incorporation in InAsSb nanowires grown by metalorganic vapor phase epitaxy BM Borg, KA Dick, J Eymery, LE Wernersson Applied Physics Letters 98 (11), 2011 | 79 | 2011 |
| High-Frequency Performance of Self-Aligned Gate-Last Surface ChannelMOSFET M Egard, L Ohlsson, M Arlelid, KM Persson, BM Borg, F Lenrick, ... IEEE Electron Device Letters 33 (3), 369-371, 2012 | 77 | 2012 |
| Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering Z Yong, KM Persson, MS Ram, G D'Acunto, Y Liu, S Benter, J Pan, Z Li, ... Applied Surface Science 551, 149386, 2021 | 76 | 2021 |
Kimberly DickProfessor of Materials Science, Lund University在 ftf.lth.se 的电子邮件经过验证
