| Engineering Nanowire n-MOSFETs at SR Mehrotra, SG Kim, T Kubis, M Povolotskyi, MS Lundstrom, G Klimeck IEEE Transactions on Electron Devices 60 (7), 2171-2177, 2013 | 58 | 2013 |
| Design concepts of terahertz quantum cascade lasers: Proposal for terahertz laser efficiency improvements T Kubis, SR Mehrotra, G Klimeck Applied Physics Letters 97 (26), 2010 | 58 | 2010 |
| Design guidelines for sub-12 nm nanowire MOSFETs M Salmani-Jelodar, SR Mehrotra, H Ilatikhameneh, G Klimeck IEEE Transactions on Nanotechnology 14 (2), 210-213, 2015 | 46 | 2015 |
| Atomistic approach to alloy scattering in Si1− xGex SR Mehrotra, A Paul, G Klimeck Applied Physics Letters 98 (17), 2011 | 42 | 2011 |
| Simulation Study of Thin-Body Ballistic n-MOSFETs Involving Transport in Mixed-L Valleys SR Mehrotra, M Povolotskyi, DC Elias, T Kubis, JJM Law, MJW Rodwell, ... IEEE electron device letters 34 (9), 1196-1198, 2013 | 39 | 2013 |
| Effect of diameter variation on electrical characteristics of Schottky barrier indium arsenide nanowire field-effect transistors A Razavieh, PK Mohseni, K Jung, S Mehrotra, S Das, S Suslov, X Li, ... ACS nano 8 (6), 6281-6287, 2014 | 32 | 2014 |
| Performance prediction of ultrascaled SiGe/Si core/shell electron and hole nanowire MOSFETs A Paul, S Mehrotra, M Luisier, G Klimeck IEEE electron device letters 31 (4), 278-280, 2010 | 31 | 2010 |
| On the validity of the top of the barrier quantum transport model for ballistic nanowire MOSFETs A Paul, S Mehrotra, G Klimeck, M Luisier 2009 13th International Workshop on Computational Electronics, 1-4, 2009 | 24 | 2009 |
| A 90nm BiCMOS technology featuring 400GHz fMAX SiGe:C HBT VP Trivedi, JP John, J Young, T Dao, D Morgan, R Ma, D Hammock, ... 2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 60-63, 2016 | 17 | 2016 |
| Field-effect transistor and method therefor SR Mehrotra, L Radic, B Grote US Patent 10,522,677, 2019 | 15 | 2019 |
| Utilizing the unique properties of nanowire MOSFETs for RF applications A Razavieh, S Mehrotra, N Singh, G Klimeck, D Janes, J Appenzeller Nano letters 13 (4), 1549-1554, 2013 | 15 | 2013 |
| Observation of 1D behavior in Si nanowires: Toward high-performance TFETs RB Salazar, SR Mehrotra, G Klimeck, N Singh, J Appenzeller Nano letters 12 (11), 5571-5575, 2012 | 15 | 2012 |
| Interface trap density metrology of state-of-the-art undoped Si n-FinFETs GC Tettamanzi, A Paul, S Lee, SR Mehrotra, N Collaert, S Biesemans, ... IEEE Electron Device Letters 32 (4), 440-442, 2011 | 14 | 2011 |
| Towards ultimate scaling of LDMOS with Ultralow Specific On-resistance S Mehrotra, L Radic, B Grote, T Saxena, G Qin, V Khemka, T Thomas, ... 2020 32nd International Symposium on Power Semiconductor Devices and ICs …, 2020 | 12 | 2020 |
| A Simulation Study of Silicon Nanowire Field Effect Transistors (FETs) SR Mehrotra University of Cincinnati, 2007 | 12 | 2007 |
| Tunneling: The major issue in ultra-scaled MOSFETs MS Jelodar, H Ilatikhameneh, P Sarangapani, SR Mehrotra, G Klimeck, ... 2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO), 670-673, 2015 | 11 | 2015 |
| Interface trap density metrology from sub-threshold transport in highly scaled undoped Si n-FinFETs A Paul, GC Tettamanzi, S Lee, SR Mehrotra, N Collaert, S Biesemans, ... Journal of Applied Physics 110 (12), 2011 | 10 | 2011 |
| MOSFet S Ahmed, S Mehrotra, S Kim, M Mannino, G Klimeck, D Vasileska, ... Режим доступу до ресурсу: https://nanohub. org/resources/mosfet, 2017 | 8 | 2017 |
| Atomistic simulation of phonon and alloy limited hole mobility in Si1–xGex nanowires S Mehrotra, P Long, M Povolotskyi, G Klimeck physica status solidi (RRL)–Rapid Research Letters 7 (10), 903-906, 2013 | 8 | 2013 |
| Field-effect transistor and method therefor SR Mehrotra, L Radic, B Grote US Patent 10,424,646, 2019 | 7 | 2019 |
Gerhard KlimeckProfessor of Electrical and Computer Engineering, Purdue University在 purdue.edu 的电子邮件经过验证
