| 30-nm InAs PHEMTs With and DH Kim, JA del Alamo Electron Device Letters, IEEE 31 (8), 806-808, 2010 | 230* | 2010 |
| 30-nm InAs pseudomorphic HEMTs on an InP substrate with a current-gain cutoff frequency of 628 GHz DH Kim, JA Del Alamo IEEE Electron Device Letters 29 (8), 830-833, 2008 | 215 | 2008 |
| fT= 688 GHz and fmax= 800 GHz in Lg= 40 nm In0. 7Ga0. 3As MHEMTs with gm_max> 2.7 mS/μm DH Kim, B Brar, JA del Alamo IEDM Tech. Dig, 319-322, 2011 | 138 | 2011 |
| Characterization of phototransistor internal gain in metamorphic high-electron-mobility transistors HS Kang, CS Choi, WY Choi, DH Kim, KS Seo Applied physics letters 84 (19), 3780-3782, 2004 | 122 | 2004 |
| Lateral and Vertical Scaling ofHEMTs for Post-Si-CMOS Logic Applications DH Kim, JA Del Alamo IEEE transactions on electron devices 55 (10), 2546-2553, 2008 | 110 | 2008 |
| Logic Suitability of 50-nmHEMTs for Beyond-CMOS Applications DH Kim, JA Del Alamo, JH Lee, KS Seo IEEE transactions on electron devices 54 (10), 2606-2613, 2007 | 93 | 2007 |
| 30 nm E-mode InAs PHEMTs for THz and future logic applications DH Kim, JA del Alamo Electron Devices Meeting, 2008. IEDM 2008. IEEE International, 1-4, 2008 | 87 | 2008 |
| A self-aligned InGaAs HEMT architecture for logic applications N Waldron, DH Kim, JA Del Alamo IEEE Transactions on Electron Devices 57 (1), 297-304, 2009 | 85 | 2009 |
| Scalability of sub-100 nm InAs HEMTs on InP substrate for future logic applications DH Kim, JA Del Alamo IEEE transactions on electron devices 57 (7), 1504-1511, 2010 | 84 | 2010 |
| Performance evaluation of 50 nm In/sub 0.7/Ga/sub 0.3/As HEMTs for beyond-CMOS logic applications DH Kim, JA Del Alamo, JH Lee, KS Seo IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005 | 83* | 2005 |
| Extraction of virtual-source injection velocity in sub-100 nm III–V HFETs DH Kim, JA Del Alamo, DA Antoniadis, B Brar 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 77 | 2009 |
| Logic performance of 40 nm InAs HEMTs DH Kim, JA Del Alamo 2007 IEEE International Electron Devices Meeting, 629-632, 2007 | 74 | 2007 |
| 50-nm E-mode In0.7Ga0.3As PHEMTs on 100-mm InP substrate with fmax> 1 THz DH Kim, JA del Alamo, P Chen, W Ha, M Urteaga, B Brar 2010 International Electron Devices Meeting, 30.6. 1-30.6. 4, 2010 | 69 | 2010 |
| InGaAs MOSFETs for CMOS: Recent advances in process technology JA Del Alamo, D Antoniadis, A Guo, DH Kim, TW Kim, J Lin, W Lu, A Vardi, ... 2013 IEEE International Electron Devices Meeting, 2.1. 1-2.1. 4, 2013 | 62 | 2013 |
| L {sub g}= 100 nm In {sub 0.7} Ga {sub 0.3} As quantum well metal-oxide semiconductor field-effect transistors with atomic layer deposited beryllium oxide as interfacial layer HM Kwon, D Veksler, D Gilmer, PD Kirsch, DH Kim, TW Hudnall, ... Applied Physics Letters 104 (16), 2014 | 61 | 2014 |
| Characterization of Al Incorporation into HfO2 Dielectric by Atomic Layer Deposition MM Rahman, JG Kim, DH Kim, TW Kim Micromachines 10 (6), 361, 2019 | 60 | 2019 |
| Phototransistors based on InP HEMTs and their applications to millimeter-wave radio-on-fiber systems CS Choi, HS Kang, WY Choi, DH Kim, KS Seo IEEE transactions on microwave theory and techniques 53 (1), 256-263, 2005 | 59 | 2005 |
| Quantum capacitance in scaled down III–V FETs D Jin, D Kim, T Kim, JA del Alamo 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 55 | 2009 |
| Ultra-wideband (from DC to 110 GHz) CPW to CPS transition S Kim, S Jeong, YT Lee, DH Kim, JS Lim, KS Seo, S Nam Electronics Letters 38 (13), 622-623, 2002 | 55 | 2002 |
| Positive bias instability and recovery in InGaAs channel nMOSFETs S Deora, G Bersuker, WY Loh, D Veksler, K Matthews, TW Kim, RTP Lee, ... IEEE Transactions on Device and Materials Reliability 13 (4), 507-514, 2013 | 53 | 2013 |
Tae-Woo KimUniversity of Ulsan在 ulsan.ac.kr 的电子邮件经过验证
Tae-Woo KimUniversity of Ulsan在 ulsan.ac.kr 的电子邮件经过验证
Gerhard KlimeckProfessor of Electrical and Computer Engineering, Purdue University在 purdue.edu 的电子邮件经过验证