Temperature and compositional dependence of the energy band gap of AlGaN alloys N Nepal, J Li, ML Nakarmi, JY Lin, HX Jiang Applied Physics Letters 87 (24), 2005 | 223 | 2005 |
Photoluminescence studies of impurity transitions in Mg-doped AlGaN alloys ML Nakarmi, N Nepal, JY Lin, HX Jiang Applied Physics Letters 94 (9), 2009 | 212 | 2009 |
Editors' Choice—Review—Theory and Characterization of Doping and Defects in β-Ga2O3 MJ Tadjer, JL Lyons, N Nepal, JA Freitas, AD Koehler, GM Foster ECS Journal of Solid State Science and Technology 8 (7), Q3187-Q3194, 2019 | 210 | 2019 |
Photoluminescence studies of impurity transitions in AlGaN alloys N Nepal, ML Nakarmi, JY Lin, HX Jiang Applied physics letters 89 (9), 2006 | 176 | 2006 |
Correlation between optical and electrical properties of Mg-doped AlN epilayers ML Nakarmi, N Nepal, C Ugolini, TM Altahtamouni, JY Lin, HX Jiang Applied physics letters 89 (15), 2006 | 169 | 2006 |
Correlation between optoelectronic and structural properties and epilayer thickness of AlN BN Pantha, R Dahal, ML Nakarmi, N Nepal, J Li, JY Lin, HX Jiang, ... Applied Physics Letters 90 (24), 2007 | 163 | 2007 |
GaN/NbN epitaxial semiconductor/superconductor heterostructures R Yan, G Khalsa, S Vishwanath, Y Han, J Wright, S Rouvimov, DS Katzer, ... Nature 555 (7695), 183-189, 2018 | 154 | 2018 |
Epitaxial ScAlN grown by molecular beam epitaxy on GaN and SiC substrates MT Hardy, BP Downey, N Nepal, DF Storm, DS Katzer, DJ Meyer Applied Physics Letters 110 (16), 2017 | 132 | 2017 |
Assessment of GaN surface pretreatment for atomic layer deposited high-k dielectrics N Nepal, NY Garces, DJ Meyer, JK Hite, MA Mastro, CR Eddy Jr Applied physics express 4 (5), 055802, 2011 | 107 | 2011 |
Electroluminescent properties of erbium-doped III–N light-emitting diodes JM Zavada, SX Jin, N Nepal, JY Lin, HX Jiang, P Chow, B Hertog Applied physics letters 84 (7), 1061-1063, 2004 | 102 | 2004 |
Exciton localization in AlGaN alloys N Nepal, J Li, ML Nakarmi, JY Lin, HX Jiang Applied physics letters 88 (6), 2006 | 93 | 2006 |
Erbium-doped GaN epilayers synthesized by metal-organic chemical vapor deposition C Ugolini, N Nepal, JY Lin, HX Jiang, JM Zavada Applied physics letters 89 (15), 2006 | 90 | 2006 |
Epitaxial bulk acoustic wave resonators as highly coherent multi-phonon sources for quantum acoustodynamics VJ Gokhale, BP Downey, DS Katzer, N Nepal, AC Lang, RM Stroud, ... Nature communications 11 (1), 2314, 2020 | 79 | 2020 |
Epitaxial growth of III–nitride/graphene heterostructures for electronic devices N Nepal, VD Wheeler, TJ Anderson, FJ Kub, MA Mastro, RL Myers-Ward, ... Applied Physics Express 6 (6), 061003, 2013 | 75 | 2013 |
Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy N Nepal, SB Qadri, JK Hite, NA Mahadik, MA Mastro, CR Eddy Applied Physics Letters 103 (8), 2013 | 73 | 2013 |
Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition VD Wheeler, N Nepal, DR Boris, SB Qadri, LO Nyakiti, A Lang, A Koehler, ... Chemistry of Materials 32 (3), 1140-1152, 2020 | 68 | 2020 |
Atomic layer epitaxy AlN for enhanced AlGaN/GaN HEMT passivation AD Koehler, N Nepal, TJ Anderson, MJ Tadjer, KD Hobart, CR Eddy, ... IEEE electron device letters 34 (9), 1115-1117, 2013 | 67 | 2013 |
The role of plasma in plasma-enhanced atomic layer deposition of crystalline films DR Boris, VD Wheeler, N Nepal, SB Qadri, SG Walton, CCR Eddy Journal of Vacuum Science & Technology A 38 (4), 2020 | 61 | 2020 |
Epitaxial growth of cubic and hexagonal InN thin films via plasma-assisted atomic layer epitaxy N Nepal, NA Mahadik, LO Nyakiti, SB Qadri, MJ Mehl, JK Hite, CR Eddy Jr Crystal growth & design 13 (4), 1485-1490, 2013 | 61 | 2013 |
Excitation dynamics of the 1.54 μm emission in Er doped GaN synthesized by metal organic chemical vapor deposition C Ugolini, N Nepal, JY Lin, HX Jiang, JM Zavada Applied physics letters 90 (5), 2007 | 59 | 2007 |