High-sensitivity, disposable lab-on-a-chip with thin-film organic electronics for fluorescence detection A Pais, A Banerjee, D Klotzkin, I Papautsky Lab on a Chip 8 (5), 794-800, 2008 | 227 | 2008 |
Photoluminescence and lasing from deoxyribonucleic acid (DNA) thin films doped with sulforhodamine Z Yu, W Li, JA Hagen, Y Zhou, D Klotzkin, JG Grote, AJ Steckl Applied optics 46 (9), 1507-1513, 2007 | 146 | 2007 |
In (Ga) As/GaAs self-organized quantum dot lasers: DC and small-signal modulation properties P Bhattacharya, KK Kamath, J Singh, D Klotzkin, J Phillips, HT Jiang, ... IEEE Transactions on Electron Devices 46 (5), 871-883, 1999 | 143 | 1999 |
High-speed modulation and switching characteristics of In (Ga) As-Al (Ga) As self-organized quantum-dot lasers P Bhattacharya, D Klotzkin, O Qasaimeh, W Zhou, S Krishna, D Zhu IEEE Journal of Selected Topics in Quantum Electronics 6 (3), 426-438, 2000 | 121 | 2000 |
45-Mbit/s cat’s-eye modulating retroreflectors WS Rabinovich, PG Goetz, R Mahon, L Swingen, J Murphy, M Ferraro, ... Optical Engineering 46 (10), 104001-104001-8, 2007 | 86 | 2007 |
A comparative study of electrode effects on the electrical and luminescent characteristics of Alq3/TPD OLED: Improvements due to conductive polymer (PEDOT) anode H Mu, W Li, R Jones, A Steckl, D Klotzkin Journal of Luminescence 126 (1), 225-229, 2007 | 86 | 2007 |
Quantum capture times at room temperature in high-speed In/sub 0.4/Ga/sub 0.6/As-GaAs self-organized quantum-dot lasers D Klotzkin, K Kamath, P Bhattacharya IEEE Photonics Technology Letters 9 (10), 1301-1303, 1997 | 83 | 1997 |
Temperature dependence of dynamic and DC characteristics of quantum-well and quantum-dot lasers: A comparative study D Klotzkin, P Bhattacharya Journal of lightwave technology 17 (9), 1634, 1999 | 69 | 1999 |
Dependence of film morphology on deposition rate in ITO/TPD/Alq3/Al organic luminescent diodes H Mu, H Shen, D Klotzkin Solid-State Electronics 48 (10-11), 2085-2088, 2004 | 66 | 2004 |
Concentration dependence of fluorescence signal in a microfluidic fluorescence detector A Banerjee, Y Shuai, R Dixit, I Papautsky, D Klotzkin Journal of Luminescence 130 (6), 1095-1100, 2010 | 58 | 2010 |
Enhanced modulation bandwidth (20 GHz) of In/sub 0.4/Ga/sub 0.6/As-GaAs self-organized quantum-dot lasers at cryogenic temperatures: role of carrier relaxation and differential … D Klotzkin, K Kamath, K Vineberg, P Bhattacharya, R Murty, J Laskar IEEE Photonics Technology Letters 10 (7), 932-934, 1998 | 55 | 1998 |
0.98-/spl mu/m multiple-quantum-well tunneling injection laser with 98-GHz intrinsic modulation bandwidth X Zhang, A Gutierrez-Aitken, D Klotzkin, P Bhattacharya, C Caneau, ... IEEE Journal of Selected Topics in Quantum Electronics 3 (2), 309-314, 1997 | 55 | 1997 |
Introduction to semiconductor lasers for optical communications DJ Klotzkin Springer International Publishing, 2020 | 53 | 2020 |
A polarization isolation method for high-sensitivity, low-cost on-chip fluorescence detection for microfluidic lab-on-a-chip A Banerjee, A Pais, I Papautsky, D Klotzkin IEEE Sensors Journal 8 (5), 621-627, 2008 | 49 | 2008 |
A CMOS optical detection system for point-of-use luminescent oxygen sensing L Shen, M Ratterman, D Klotzkin, I Papautsky Sensors and actuators B: Chemical 155 (1), 430-435, 2011 | 47 | 2011 |
Monolithically integrated SiGe-Si PIN-HBT front-end photoreceivers JS Rieh, D Klotzkin, O Qasaimeh, LH Lu, K Yang, LPB Katehi, ... IEEE Photonics Technology Letters 10 (3), 415-417, 1998 | 39 | 1998 |
Temperature dependence of electron mobility, electroluminescence and photoluminescence of Alq3 in OLED H Mu, D Klotzkin, A De Silva, HP Wagner, D White, B Sharpton Journal of Physics D: Applied Physics 41 (23), 235109, 2008 | 32 | 2008 |
High-speed tunnel-injection quantum well and quantum dot lasers P Bhattacharya, X Zhang, Y Yuan, KK Kamath, D Klotzkin, C Caneau, ... Physics and Simulation of Optoelectronic Devices VI 3283, 702-709, 1998 | 31 | 1998 |
Carrier dynamics in high-speed (f/sub-3 dB/> 40 GHz) 0.98-μm multiquantum-well tunneling injection lasers determined from electrical impedance measurements D Klotzkin, X Zhang, P Bhattacharya, C Caneau, R Bhat IEEE Photonics Technology Letters 9 (5), 578-580, 1997 | 27 | 1997 |
InP-based 1.5 µm vertical cavity surface emitting laser with epitaxially grown defect-free GaAs-based distributed Bragg reflectors H Gebretsadik, PK Bhattacharya, KK Kamath, OR Qasaimeh, DJ Klotzkin, ... Electronics Letters 34 (13), 1316-1318, 1998 | 24 | 1998 |