| Stable amorphous In2O3-based thin-film transistors by incorporating SiO2 to suppress oxygen vacancies N Mitoma, S Aikawa, X Gao, T Kizu, M Shimizu, MF Lin, T Nabatame, ... Applied Physics Letters 104 (10), 2014 | 117 | 2014 |
| Low-temperature processable amorphous In-W-O thin-film transistors with high mobility and stability T Kizu, S Aikawa, N Mitoma, et al. Applied Physics Letters 104 (15), 152103, 2014 | 100 | 2014 |
| Dopant selection for control of charge carrier density and mobility in amorphous indium oxide thin-film transistors: Comparison between Si-and W-dopants N Mitoma, S Aikawa, W Ou-Yang, X Gao, T Kizu, MF Lin, A Fujiwara, ... Applied Physics Letters 106 (4), 2015 | 69 | 2015 |
| Suppression of excess oxygen for environmentally stable amorphous In-Si-O thin-film transistors S Aikawa, N Mitoma, T Kizu, T Nabatame, K Tsukagoshi Applied Physics Letters 106 (19), 2015 | 34 | 2015 |
| Catalytic graphitization of an amorphous carbon film under focused electron beam irradiation due to the presence of sputtered nickel metal particles S Aikawa, T Kizu, E Nishikawa Carbon 48 (10), 2997-2999, 2010 | 34 | 2010 |
| Homogeneous double-layer amorphous Si-doped indium oxide thin-film transistors for control of turn-on voltage T Kizu, S Aikawa, T Nabatame, A Fujiwara, K Ito, M Takahashi, ... Journal of Applied Physics 120 (4), 2016 | 27 | 2016 |
| Codoping of zinc and tungsten for practical high-performance amorphous indium-based oxide thin film transistors T Kizu, N Mitoma, M Miyanaga, H Awata, T Nabatame, K Tsukagoshi Journal of Applied Physics 118 (12), 2015 | 27 | 2015 |
| Self-formed copper oxide contact interlayer for high-performance oxide thin film transistors X Gao, S Aikawa, N Mitoma, MF Lin, T Kizu, T Nabatame, K Tsukagoshi Applied Physics Letters 105 (2), 2014 | 20 | 2014 |
| Phase transitions from semiconductive amorphous to conductive polycrystalline in indium silicon oxide thin films N Mitoma, B Da, H Yoshikawa, T Nabatame, M Takahashi, K Ito, T Kizu, ... Applied Physics Letters 109 (22), 2016 | 19 | 2016 |
| Reduction of the interfacial trap density of indium-oxide thin film transistors by incorporation of hafnium and annealing process MF Lin, X Gao, N Mitoma, T Kizu, W Ou-Yang, S Aikawa, T Nabatame, ... AIP Advances 5 (1), 2015 | 17 | 2015 |
| High-performance non-volatile field-effect transistor memories using an amorphous oxide semiconductor and ferroelectric polymer Y Wang, T Kizu, L Song, Y Zhang, S Jiang, J Qian, Q Wang, Y Shi, ... Journal of Materials Chemistry C 4 (34), 7917-7923, 2016 | 16 | 2016 |
| Amorphous In-Si-O films fabricated via solution processing HE Jan, H Hoang, T Nakamura, T Koga, T Ina, T Uruga, T Kizu, ... Journal of Electronic Materials 46, 3610-3614, 2017 | 12 | 2017 |
| Controllable film densification and interface flatness for high-performance amorphous indium oxide based thin film transistors W Ou-Yang, N Mitoma, T Kizu, X Gao, MF Lin, T Nabatame, K Tsukagoshi Applied Physics Letters 105 (16), 2014 | 11 | 2014 |
| Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors K Kurishima, T Nabatame, M Shimizu, N Mitoma, T Kizu, S Aikawa, ... Journal of Vacuum Science & Technology A 33 (6), 2015 | 10 | 2015 |
| Si-doping effect on solution-processed In-O thin-film transistors H Hoang, T Hori, T Yasuda, T Kizu, K Tsukagoshi, T Nabatame, ... Materials Research Express 6 (2), 026410, 2018 | 9 | 2018 |
| Carbon nanomaterial synthesis from sucrose solution without using graphite electrodes S Aikawa, T Kizu, E Nishikawa, T Kioka Chemistry letters 36 (12), 1426-1427, 2007 | 9 | 2007 |
| Effect of carbon doping on threshold voltage and mobility of In-Si-O thin-film transistors K Kurishima, T Nabatame, N Mitoma, T Kizu, S Aikawa, K Tsukagoshi, ... Journal of Vacuum Science & Technology B 36 (6), 2018 | 7 | 2018 |
| Correlation between active layer thickness and ambient gas stability in IGZO thin-film transistors X Gao, MF Lin, BH Mao, M Shimizu, N Mitoma, T Kizu, W Ou-Yang, ... Journal of Physics D: Applied Physics 50 (2), 025102, 2016 | 7 | 2016 |
| Prospectively of carbon-doped indium-tungsten-oxide channel TFT for bias stress instability K Kurishima, T Nabatame, T Kizu, N Mitoma, K Tsukagoshi, T Sawada, ... ECS Transactions 75 (10), 149, 2016 | 6 | 2016 |
| Molar concentration dependence of sucrose solution in carbon nanotube synthesis by liquid-phase arc discharge S Aikawa, T Kizu, K Kamei, E Nishikawa e-Journal of Surface Science and Nanotechnology 9, 215-218, 2011 | 6 | 2011 |
Kazuhito TsukagoshiWPI-MANA, National Institute for Materials Science (NIMS)在 nims.go.jp 的电子邮件经过验证
