| Analog synaptic behavior of a silicon nitride memristor S Kim, H Kim, S Hwang, MH Kim, YF Chang, BG Park ACS applied materials & interfaces 9 (46), 40420-40427, 2017 | 237 | 2017 |
| Resistive switching characteristics of Si3N4-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power applications S Kim, S Jung, MH Kim, S Cho, BG Park Applied Physics Letters 106 (21), 2015 | 109 | 2015 |
| Neuronal dynamics in HfO x/AlO y-based homeothermic synaptic memristors with low-power and homogeneous resistive switching S Kim, J Chen, YC Chen, MH Kim, H Kim, MW Kwon, S Hwang, M Ismail, ... Nanoscale 11 (1), 237-245, 2019 | 108 | 2019 |
| Scaling effect on silicon nitride memristor with highly doped Si substrate S Kim, S Jung, MH Kim, YC Chen, YF Chang, KC Ryoo, S Cho, JH Lee, ... Small 14 (19), 1704062, 2018 | 91 | 2018 |
| Reliable organic memristors for neuromorphic computing by predefining a localized ion-migration path in crosslinkable polymer HL Park, MH Kim, MH Kim, SH Lee Nanoscale 12 (44), 22502-22510, 2020 | 82 | 2020 |
| Resistive switching and synaptic behaviors of an HfO2/Al2O3 stack on ITO for neuromorphic systems C Mahata, C Lee, Y An, MH Kim, S Bang, CS Kim, JH Ryu, S Kim, H Kim, ... Journal of Alloys and Compounds 826, 154434, 2020 | 67 | 2020 |
| Synaptic characteristics of amorphous boron nitride-based memristors on a highly doped silicon substrate for neuromorphic engineering J Lee, JH Ryu, B Kim, F Hussain, C Mahata, E Sim, M Ismail, Y Abbas, ... ACS applied materials & interfaces 12 (30), 33908-33916, 2020 | 55 | 2020 |
| Filamentary and interface switching of CMOS-compatible Ta2O5 memristor for non-volatile memory and synaptic devices JH Ryu, F Hussain, C Mahata, M Ismail, Y Abbas, MH Kim, C Choi, ... Applied Surface Science 529, 147167, 2020 | 51 | 2020 |
| Fluoropolymer-based organic memristor with multifunctionality for flexible neural network system MH Kim, HL Park, MH Kim, J Jang, JH Bae, IM Kang, SH Lee npj Flexible Electronics 5 (1), 34, 2021 | 48 | 2021 |
| Reset-voltage-dependent precise tuning operation of TiOx/Al2O3 memristive crossbar array TH Kim, H Nili, MH Kim, KK Min, BG Park, H Kim Applied Physics Letters 117 (15), 2020 | 46 | 2020 |
| Nano-cone resistive memory for ultralow power operation S Kim, S Jung, MH Kim, TH Kim, S Bang, S Cho, BG Park Nanotechnology 28 (12), 125207, 2017 | 38 | 2017 |
| Improved resistive switching characteristics in Ni/SiNx/p++-Si devices by tuning x S Kim, YF Chang, MH Kim, BG Park Applied Physics Letters 111 (3), 2017 | 37 | 2017 |
| Tuning resistive switching parameters in Si3N4-based RRAM for three-dimensional vertical resistive memory applications S Kim, H Kim, S Jung, MH Kim, SH Lee, S Cho, BG Park Journal of Alloys and Compounds 663, 419-423, 2016 | 33 | 2016 |
| Gradual bipolar resistive switching in Ni/Si3N4/n+-Si resistive-switching memory device for high-density integration and low-power applications S Kim, S Jung, MH Kim, S Cho, BG Park Solid-State Electronics 114, 94-97, 2015 | 33 | 2015 |
| Gradual switching and self-rectifying characteristics of Cu/α-IGZO/p+-Si RRAM for synaptic device application S Bang, MH Kim, TH Kim, DK Lee, S Kim, S Cho, BG Park Solid-State Electronics 150, 60-65, 2018 | 30 | 2018 |
| Ultralow power switching in a silicon-rich SiN y/SiN x double-layer resistive memory device S Kim, YF Chang, MH Kim, S Bang, TH Kim, YC Chen, JH Lee, BG Park Physical Chemistry Chemical Physics 19 (29), 18988-18995, 2017 | 28 | 2017 |
| Fabrication and Characterization of TiOx Memristor for Synaptic Device Application TH Kim, MH Kim, S Bang, DK Lee, S Kim, S Cho, BG Park IEEE Transactions on Nanotechnology 19, 475-480, 2020 | 27 | 2020 |
| Self‐Selective Organic Memristor by Engineered Conductive Nanofilament Diffusion for Realization of Practical Neuromorphic System HL Park, MH Kim, H Kim, SH Lee Advanced Electronic Materials 7 (8), 2100299, 2021 | 26 | 2021 |
| Uniformity Improvement of SiNx-Based Resistive Switching Memory by Suppressed Internal Overshoot Current MH Kim, S Kim, S Bang, TH Kim, DK Lee, S Cho, BG Park IEEE Transactions on Nanotechnology 17 (4), 824-828, 2018 | 25 | 2018 |
| Realization of biomimetic synaptic functions in a one-cell organic resistive switching device using the diffusive parameter of conductive filaments SH Lee, HL Park, MH Kim, MH Kim, BG Park, SD Lee ACS applied materials & interfaces 12 (46), 51719-51728, 2020 | 24 | 2020 |
Byung Gook ParkProfessor of Electrical Engineering, Seoul National University在 snu.ac.kr 的电子邮件经过验证
