| Description and verification of the fundamental current mechanisms in silicon carbide Schottky barrier diodes J Nicholls, S Dimitrijev, P Tanner, J Han Scientific reports 9 (1), 3754, 2019 | 39 | 2019 |
| Stretchable inertial microfluidic device for tunable particle separation H Fallahi, J Zhang, J Nicholls, HP Phan, NT Nguyen Analytical Chemistry 92 (18), 12473-12480, 2020 | 33 | 2020 |
| The role of near-interface traps in modulating the barrier height of SiC Schottky diodes JR Nicholls, S Dimitrijev, P Tanner, J Han IEEE Transactions on Electron Devices 66 (4), 1675-1680, 2019 | 22 | 2019 |
| The correct equation for the current through voltage-dependent capacitors U Jadli, F Mohd-Yasin, HA Moghadam, JR Nicholls, P Pande, S Dimitrijev IEEE Access 8, 98038-98043, 2020 | 18 | 2020 |
| Near-interface trap model for the low temperature conductance signal in SiC MOS capacitors with nitrided gate oxides JR Nicholls, AM Vidarsson, D Haasmann, EÖ Sveinbjörnsson, ... IEEE Transactions on Electron Devices 67 (9), 3722-3728, 2020 | 17 | 2020 |
| Detection of near-interface traps in NO annealed 4H-SiC metal oxide semiconductor capacitors combining different electrical characterization methods AM Vidarsson, JR Nicholls, D Haasmann, S Dimitrijev, ... Journal of Applied Physics 131 (21), 2022 | 9 | 2022 |
| High performance and high yield sub-240 nm AlN: GaN short period superlattice LEDs grown by MBE on 6 in. sapphire substrates J Nicholls, L Anderson, W Lee, JJS Ahn, A Baskaran, H Bang, M Belloeil, ... Applied Physics Letters 123 (5), 2023 | 7 | 2023 |
| Electron trapping effects in SiC Schottky diodes: Review and comment JR Nicholls Microelectronics Reliability 127, 114386, 2021 | 7 | 2021 |
| A method for characterizing near-interface traps in SiC metal–oxide–semiconductor capacitors from conductance–temperature spectroscopy measurements JR Nicholls, AM Vidarsson, D Haasmann, EÖ Sveinbjörnsson, ... Journal of Applied Physics 129 (5), 2021 | 7 | 2021 |
| Measurement of Power Dissipation Due to Parasitic Capacitances of Power MOSFETs U Jadli, F Mohd-Yasin, HA Moghadam, P Pande, JR Nicholls, S Dimitrijev IEEE Access 8, 187043-187051, 2020 | 6 | 2020 |
| A Simple Equation for the Energy Stored by Voltage-Dependent Capacitances U Jadli, F Mohd-Yasin, HA Moghadam, JR Nicholls, P Pande, S Dimitrijev IEEE Transactions on Power Electronics 35 (12), 12629-12632, 2020 | 6 | 2020 |
| A compact model for SiC Schottky barrier diodes based on the fundamental current mechanisms JR Nicholls, S Dimitrijev IEEE Journal of the Electron Devices Society 8, 545-553, 2020 | 5 | 2020 |
| Regression Model for the Specific Contact Resistance of SiC Ohmic Contacts JR Nicholls, S Dimitrijev IEEE Transactions on Semiconductor Manufacturing 34 (4), 493-499, 2021 | 2 | 2021 |
| The Fundamental Current Mechanisms in SiC Schottky Barrier Diodes: Physical Model, Experimental Verification and Implications S Dimitrijev, J Nicholls, P Tanner, J Han 2019 IEEE 31st International Conference on Microelectronics (MIEL), 31-36, 2019 | 1 | 2019 |
| Observation of Fast Near-Interface Traps in 4H-SiC MOS Capacitors Using Capacitance Voltage Analysis at Cryogenic Temperatures AM Vidarsson, JR Nicholls, D Haasmann, S Dimitrijev, ... Materials Science Forum 1062, 288-292, 2022 | | 2022 |
| Image Force Corrections to Tung’s Inhomogeneous Schottky Barrier Model JR Nicholls, S Dimitrijev IEEE Transactions on Electron Devices 68 (12), 6393-6399, 2021 | | 2021 |
| Electron Transport and Trapping at Metal and Oxide Interfaces with Silicon Carbide JR Nicholls | | 2021 |
| A stretchable micromixer with enhanced performance for intermediate Reynolds numbers H Fallahi, J Zhang, J Nicholls, P Singha, NK Nguyen, CH Ooi, NT Nguyen | | 2021 |
| The Correct Equation for the Current Through Voltage-Dependent Capacitors HA MOGHADAM, JR NICHOLLS | | |
