| Assessment of 10 kV, 100 A Silicon Carbide mosfet Power Modules D Johannesson, M Nawaz, K Ilves IEEE Transactions on Power Electronics 33 (6), 5215-5225, 2017 | 85 | 2017 |
| Comparative evaluation of voltage source converters with silicon carbide semiconductor devices for high-voltage direct current transmission K Jacobs, S Heinig, D Johannesson, S Norrga, HP Nee IEEE Transactions on Power Electronics 36 (8), 8887-8906, 2021 | 34 | 2021 |
| Analytical PSpice model for SiC MOSFET based high power modules D Johannesson, M Nawaz Microelectronics journal 53, 167-176, 2016 | 33 | 2016 |
| Potential of ultra-high voltage silicon carbide semiconductor devices D Johannesson, M Nawaz, K Jacobs, S Norrga, HP Nee 2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2016 | 31 | 2016 |
| Investigation of the surge current capability of the body diode of SiC MOSFETs for HVDC applications DP Sadik, S Heinig, K Jacobs, D Johannesson, JK Lim, M Nawaz, ... 2016 18th European Conference on Power Electronics and Applications (EPE'16 …, 2016 | 29 | 2016 |
| Static and dynamic performance prediction of ultrahigh-voltage silicon carbide insulated-gate bipolar transistors D Johannesson, M Nawaz, S Norrga, A Hallén, HP Nee IEEE transactions on power electronics 36 (5), 5874-5891, 2020 | 23 | 2020 |
| Development of a simple analytical PSpice model for SiC-based BJT power modules D Johannesson, M Nawaz IEEE Transactions on Power Electronics 31 (6), 4517-4525, 2015 | 23 | 2015 |
| MMC converter cells employing ultrahigh-voltage SiC bipolar power semiconductors K Jacobs, D Johannesson, S Norrga, HP Nee 2017 19th European Conference on Power Electronics and Applications (EPE'17 …, 2017 | 14 | 2017 |
| Evaluation of ultrahigh-voltage 4H-SiC gate turn-off thyristors and insulated-gate bipolar transistors for high-power applications D Johannesson, M Nawaz, S Norrga, HP Nee IEEE Transactions on Power Electronics 37 (4), 4133-4147, 2021 | 9 | 2021 |
| Assessment of junction termination extension structures for ultrahigh-voltage silicon carbide pin-diodes; a simulation study D Johannesson, M Nawaz, HP Nee IEEE Open Journal of Power Electronics 2, 304-314, 2021 | 9 | 2021 |
| Dynamic avalanche limit and current filamentation onset limit in 4H-silicon carbide high-voltage diodes D Johannesson, M Nawaz, HP Nee IEEE Journal of Emerging and Selected Topics in Power Electronics 10 (5 …, 2021 | 8 | 2021 |
| Assessment of PSpice model for commercial SiC MOSFET power modules D Johannesson, M Nawaz 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2015 | 7 | 2015 |
| Wide-range prediction of ultra-high voltage SiC IGBT static performance using calibrated TCAD model D Johannesson, K Jacobs, S Norrga, A Hallén, M Nawaz, HP Nee Materials Science Forum 1004, 911-916, 2020 | 5 | 2020 |
| TCAD model calibration of high voltage 4h-SiC bipolar junction transistors D Johannesson, M Nawaz, HP Nee Materials Science Forum 963, 670-673, 2019 | 3 | 2019 |
| High-Voltage (8.5 kV) Asymmetric IGCT for MVD and HVDC Applications U Vemulapati, D Johannesson, T Wikström, T Stiasny, C Corvace, ... 2023 11th International Conference on Power Electronics and ECCE Asia (ICPE …, 2023 | 2 | 2023 |
| Development of a PSpice Model for SiC MOSFET Power Modules D Johannesson, M Nawaz Materials Science Forum 858, 1074-1077, 2016 | 2 | 2016 |
| Ultrahigh-Voltage Silicon Carbide Device Performance, Requirements, and Limitations in High-Power Applications D Johannesson KTH Royal Institute of Technology, 2021 | 1 | 2021 |
| Transformer arrangement and method for voltage conversion R Alves, P Bakas, J Svensson, M Nawaz, SA Mousavi, D Johannesson, ... US Patent App. 18/023,116, 2023 | | 2023 |
| Switching circuit with snubber components L Harnefors, D Johannesson US Patent 11,646,653, 2023 | | 2023 |
| Development of a PSPICE Model for 1200 V/800 A SiC Bipolar Junction Transistor Power Module D Johannesson, M Nawaz Materials Science Forum 821, 830-833, 2015 | | 2015 |
