| Temperature-dependent electrical characteristics of Ni/Au vertical Schottky barrier diodes on β-Ga2O3 epilayers H Sheoran, BR Tak, N Manikanthababu, R Singh ECS Journal of Solid State Science and Technology 9 (5), 055004, 2020 | 45 | 2020 |
| Swift heavy ion irradiation-induced modifications in the electrical and surface properties of β-Ga2O3 N Manikanthababu, BR Tak, K Prajna, S Sarkar, K Asokan, D Kanjilal, ... Applied Physics Letters 117 (14), 142105, 2020 | 37 | 2020 |
| High Performance of Zero-Power-Consumption MOCVD-Grown β-Ga2O3-Based Solar-Blind Photodetectors with Ultralow Dark Current and High-Temperature … H Sheoran, S Fang, F Liang, Z Huang, S Kaushik, N Manikanthababu, ... ACS Applied Materials & Interfaces 14 (46), 52096-52107, 2022 | 35 | 2022 |
| Electronic excitation induced defect dynamics in HfO2 based MOS devices investigated by in-situ electrical measurements N Manikanthababu, S Vajandar, N Arun, AP Pathak, K Asokan, ... Applied Physics Letters 112 (13), 2018 | 31 | 2018 |
| SHI induced effects on the electrical and optical properties of HfO2 thin films deposited by RF sputtering N Manikanthababu, M Dhanunjaya, SVSN Rao, AP Pathak Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2016 | 28 | 2016 |
| Synthesis, characterization and radiation damage studies of high-k dielectric (HfO2) films for MOS device applications N Manikanthababu, N Arun, M Dhanunjaya, V Saikiran, ... Radiation Effects and Defects in Solids 170 (3), 207-217, 2015 | 26 | 2015 |
| Radiation sustenance of HfO2/β-Ga2O3 metal-oxide-semiconductor capacitors: gamma irradiation study N Manikanthababu, BR Tak, P Kunche, R Singh, BK Panigrahi Semiconductor Science and Technology 35, 055024, 2020 | 22 | 2020 |
| Gamma irradiation-induced effects on the electrical properties of HfO2-based MOS devices N Manikanthababu, N Arun, M Dhanunjaya, SVS Nageswara Rao, ... Radiation Effects and Defects in Solids 171 (1-2), 77-86, 2016 | 21 | 2016 |
| Radiation tolerance, charge trapping, and defect dynamics studies of ALD-grown Al/HfO 2/Si nMOSCAPs N Manikanthababu, T Basu, S Vajandar, SVSN Rao, BK Panigrahi, ... Journal of Materials Science: Materials in Electronics 31 (4), 3312–3322, 2020 | 19 | 2020 |
| Ion induced intermixing and consequent effects on the leakage currents in HfO2/SiO2/Si systems N Manikanthababu, TK Chan, S Vajandar, V Saikiran, AP Pathak, ... Applied Physics A (Materials Science & Processing) 123 (5), 303, 2017 | 19 | 2017 |
| Ion beam studies of Hafnium based alternate high-k dielectric films deposited on silicon N Manikanthababu, TK Chan, AP Pathak, G Devaraju, NS Rao, P Yang, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2014 | 17 | 2014 |
| Review of Radiation-Induced Effects on β-Ga2O3 Materials and Devices N Manikanthababu, H Sheoran, P Siddham, R Singh Crystals 12 (7), 1009, 2022 | 16 | 2022 |
| Electronic excitation-induced tunneling and charge-trapping explored by in situ electrical characterization in Ni/HfO2/β-Ga2O3 metal–oxide–semiconductor capacitors N Manikanthababu, BR Tak, K Prajna, S Sarkar, RC Meena, K Asokan, ... Materials Science and Engineering: B 281, 115716, 2022 | 11 | 2022 |
| Effects of ion irradiation on the structural and electrical properties of HfO2/SiON/Si p-metal oxide semiconductor capacitors N Manikanthababu, V Saikiran, T Basu, K Prajna, S Vajandar, AP Pathak, ... Thin Solid Films 682, 156-162, 2019 | 11 | 2019 |
| In Situ Electrical Characteristics and Defect Dynamics Induced by Swift Heavy Ion Irradiation in Pt/PtOx/-Ga₂O₃ Vertical Schottky Barrier Diodes N Manikanthababu, H Sheoran, K Prajna, SA Khan, K Asokan, JV Vas, ... IEEE Transactions on Electron Devices 69 (11), 5996-6001, 2022 | 8 | 2022 |
| Exploring current conduction mechanisms in 6 MeV ion irradiated Au/SiO2/beta-Ga2O3 metal-oxide-semiconductor devices N Manikanthababu, BR Tak, H Sheoran, K Prajna, BK Panigrahi, R Singh 2020 5th IEEE International Conference on Emerging Electronics (ICEE), 1-4, 2020 | 8 | 2020 |
| Effect of growth rate on crystallization of HfO2 thin films deposited by RF magnetron sputtering M Dhanunjaya, N Manikanthababu, AP Pathak, SVS Rao AIP Conference Proceedings 1731 (1), 2016 | 8 | 2016 |
| Effects of growth parameters on HfO2 thin-films deposited by RF Magnetron sputtering M Dhanunjaya, N Manikanthababu, S Ojha, S Pojprapai, AP Pathak, ... Radiation Effects and Defects in Solids 177 (1-2), 15-26, 2022 | 5 | 2022 |
| Fractional Fourier Transform Techniques for Speech Enhancement P Kunche, N Manikanthababu Springer International Publishing, 2020 | 4 | 2020 |
| Ion irradiation-induced effects on optical and structural properties of Ge nanoparticles synthesized by laser ablation G Neelima, T Mahesh, N Manikanthababu, AP Pathak, V Saikiran Physica B: Condensed Matter 634, 413805, 2022 | 3 | 2022 |
Nageswara Rao SunkaranamSchool of Physics, University of Hyderabad, India在 uohyd.ernet.in 的电子邮件经过验证
