| Realizing large-scale, electronic-grade two-dimensional semiconductors YC Lin, B Jariwala, BM Bersch, K Xu, Y Nie, B Wang, SM Eichfeld, ... ACS nano 12 (2), 965-975, 2018 | 223 | 2018 |
| Contact Metal–MoS2 Interfacial Reactions and Potential Implications on MoS2-Based Device Performance CM Smyth, R Addou, S McDonnell, CL Hinkle, RM Wallace The Journal of Physical Chemistry C 120 (27), 14719-14729, 2016 | 157 | 2016 |
| MoS2–Titanium Contact Interface Reactions S McDonnell, C Smyth, CL Hinkle, RM Wallace ACS applied materials & interfaces 8 (12), 8289-8294, 2016 | 152 | 2016 |
| ACS nano Z Li Nanoporous Glass Integrated in Volumetric Bar-Chart Chip for Point-of-Care …, 2016 | 124 | 2016 |
| Contact Engineering High-Performance n-Type MoTe2 Transistors MJ Mleczko, AC Yu, CM Smyth, V Chen, YC Shin, S Chatterjee, YC Tsai, ... Nano letters 19 (9), 6352-6362, 2019 | 115 | 2019 |
| High‐mobility helical tellurium field‐effect transistors enabled by transfer‐free, low‐temperature direct growth G Zhou, R Addou, Q Wang, S Honari, CR Cormier, L Cheng, R Yue, ... Advanced Materials 30 (36), 1803109, 2018 | 114 | 2018 |
| Intrinsic air stability mechanisms of two-dimensional transition metal dichalcogenide surfaces: basal versus edge oxidation RC Longo, R Addou, KC Santosh, JY Noh, CM Smyth, D Barrera, ... 2D Materials 4 (2), 025050, 2017 | 110 | 2017 |
| Interface Chemistry of Contact Metals and Ferromagnets on the Topological Insulator Bi2Se3 LA Walsh, CM Smyth, AT Barton, Q Wang, Z Che, R Yue, J Kim, MJ Kim, ... The Journal of Physical Chemistry C 121 (42), 23551-23563, 2017 | 102 | 2017 |
| WSe2-contact metal interface chemistry and band alignment under high vacuum and ultra high vacuum deposition conditions CM Smyth, R Addou, S McDonnell, CL Hinkle, RM Wallace 2D Materials 4 (2), 025084, 2017 | 95 | 2017 |
| One dimensional metallic edges in atomically thin WSe2 induced by air exposure R Addou, CM Smyth, JY Noh, YC Lin, Y Pan, SM Eichfeld, S Fölsch, ... 2D Materials 5 (2), 025017, 2018 | 57 | 2018 |
| W Te2 thin films grown by beam-interrupted molecular beam epitaxy LA Walsh, R Yue, Q Wang, AT Barton, R Addou, CM Smyth, H Zhu, J Kim, ... 2D Materials 4 (2), 025044, 2017 | 57 | 2017 |
| Contact Engineering for Dual-Gate MoS2 Transistors Using O2 Plasma Exposure P Bolshakov, CM Smyth, A Khosravi, P Zhao, PK Hurley, CL Hinkle, ... ACS Applied Electronic Materials 1 (2), 210-219, 2019 | 52 | 2019 |
| Engineering the Palladium–WSe2 Interface Chemistry for Field Effect Transistors with High-Performance Hole Contacts CM Smyth, LA Walsh, P Bolshakov, M Catalano, R Addou, L Wang, J Kim, ... ACS Applied Nano Materials 2 (1), 75-88, 2018 | 39 | 2018 |
| Covalent nitrogen doping in molecular beam epitaxy-grown and bulk WSe2 A Khosravi, R Addou, CM Smyth, R Yue, CR Cormier, J Kim, CL Hinkle, ... APL Materials 6 (2), 2018 | 31 | 2018 |
| In situ exfoliated 2D molybdenum disulfide analyzed by XPS X Wang, CR Cormier, A Khosravi, CM Smyth, JR Shallenberger, R Addou, ... Surface Science Spectra 27 (1), 2020 | 24 | 2020 |
| Origins of Fermi Level Pinning between Tungsten Dichalcogenides (WS2, WTe2) and Bulk Metal Contacts: Interface Chemistry and Band Alignment CM Smyth, R Addou, CL Hinkle, RM Wallace The Journal of Physical Chemistry C 124 (27), 14550-14563, 2020 | 23 | 2020 |
| WSe (2− x) Tex alloys grown by molecular beam epitaxy AT Barton, R Yue, LA Walsh, G Zhou, C Cormier, CM Smyth, R Addou, ... 2D Materials 6 (4), 045027, 2019 | 23 | 2019 |
| Origins of Fermi-Level Pinning between Molybdenum Dichalcogenides (MoSe2, MoTe2) and Bulk Metal Contacts: Interface Chemistry and Band Alignment CM Smyth, R Addou, CL Hinkle, RM Wallace The Journal of Physical Chemistry C 123 (39), 23919-23930, 2019 | 22 | 2019 |
| Modification of the Electronic Transport in Atomically Thin WSe2 by Oxidation YC Lin, BM Bersch, R Addou, K Xu, Q Wang, CM Smyth, B Jariwala, ... Advanced Materials Interfaces 7 (18), 2000422, 2020 | 17 | 2020 |
| Engineering the interface chemistry for scandium electron contacts in WSe2 transistors and diodes CM Smyth, LA Walsh, P Bolshakov, M Catalano, M Schmidt, B Sheehan, ... 2D Materials 6 (4), 045020, 2019 | 15 | 2019 |
Robert M. WallaceUniversity of Texas at Dallas在 utdallas.edu 的电子邮件经过验证
