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Mohammad Masum Billah, Ph.D
Mohammad Masum Billah, Ph.D
Assistant Professor, IUT-Bangladesh
在 tft.khu.ac.kr 的电子邮件经过验证 - 首页
标题
引用次数
引用次数
年份
Effect of tensile and compressive bending stress on electrical performance of flexible a-IGZO TFTs
MM Billah, MM Hasan, J Jang
IEEE Electron Device Letters 38 (7), 890-893, 2017
992017
Analysis of improved performance under negative bias illumination stress of dual gate driving a-IGZO TFT by TCAD simulation
MM Billah, MDH Chowdhury, M Mativenga, JG Um, RK Mruthyunjaya, ...
IEEE Electron Device Letters 37 (6), 735-738, 2016
742016
Origin of light instability in amorphous IGZO thin-film transistors and its suppression
M Mativenga, F Haque, MM Billah, JG Um
Scientific reports 11 (1), 14618, 2021
582021
Highly Stable, Nanocrystalline, ZnO Thin-Film Transistor by Spray Pyrolysis Using High-K Dielectric
JK Saha, MM Billah, RN Bukke, YG Kim, NN Mude, AB Siddik, MM Islam, ...
IEEE Transactions on Electron Devices 67 (3), 1021-1026, 2020
512020
High‐performance coplanar dual‐channel a‐InGaZnO/a‐InZnO semiconductor thin‐film transistors with high field‐effect mobility
MM Billah, AB Siddik, JB Kim, DK Yim, SY Choi, J Liu, D Severin, ...
Advanced Electronic Materials 7 (3), 2000896, 2021
472021
Bending stress induced performance change in plastic oxide thin-film transistor and recovery by annealing at 300° C
MM Hasan, MM Billah, MN Naik, JG Um, J Jang
IEEE Electron Device Letters 38 (8), 1035-1038, 2017
462017
Highly robust flexible oxide thin-film transistors by bulk accumulation
X Li, MM Billah, M Mativenga, D Geng, YH Kim, TW Kim, YG Seol, J Jang
IEEE Electron Device Letters 36 (8), 811-813, 2015
422015
TCAD Simulation of Dual Gate a-IGZO TFTs with Source and Drain Offsets
MM Billah, M Hasan, M Chun, J Jang
IEEE Electron Device Letters 37 (11), 1442 - 1445, 2016
402016
Triple-stack ZnO/AlZnO/YZnO heterojunction oxide thin-film transistors by spray pyrolysis for high mobility and excellent stability
JK Saha, MM Billah, J Jang
ACS applied materials & interfaces 13 (31), 37350-37362, 2021
352021
Solution-Processed La Alloyed ZrOx High-k Dielectric for High-Performance ZnO Thin-Film Transistors
MM Islam, JK Saha, RN Bukke, MM Hasan, MM Billah, NN Mude, A Ali, ...
IEEE Electron Device Letters 41 (7), 1021-1024, 2020
332020
Effect of doping fluorine in offset region on performance of coplanar a-IGZO TFTs
A Rahaman, MM Billah, JG Um, MM Hasan, J Jang
IEEE Electron Device Letters 39 (9), 1318-1321, 2018
332018
Effect of grain boundary protrusion on electrical performance of low temperature polycrystalline silicon thin film transistors
MM Billah, AB Siddik, JB Kim, L Zhao, SY Choi, DK Yim, J Jang
IEEE Journal of the Electron Devices Society 7, 503-511, 2019
302019
Improvement of stability and performance of amorphous indium gallium zinc oxide thin film transistor by zinc-tin-oxide spray coating
H Lee, S Lee, Y Kim, AB Siddik, MM Billah, J Lee, J Jang
IEEE Electron Device Letters 41 (10), 1520-1523, 2020
262020
Reduced mechanical strain in bendable a-IGZO TFTs under dual-gate driving
MM Billah, JU Han, MM Hasan, J Jang
IEEE Electron Device Letters 39 (6), 835-838, 2018
252018
High voltage amorphous InGaZnO TFT with F doped drain offset structure
C Park, MM Billah, AB Siddik, S Lee, B Han, J Jang
IEEE Electron Device Letters 42 (10), 1476-1479, 2021
222021
Ultra-low power, emission gate driver with pulse width modulation using low-temperature poly-Si oxide thin-film transistors
J Kim, MM Billah, J Jang
IEEE Electron Device Letters 43 (2), 236-239, 2021
212021
Extremely Stable Dual Gate Coplanar Amorphous InGaZnO Thin Film Transistor With Split Active Layer by N2O Annealing
MH Rabbi, MM Billah, AB Siddik, S Lee, J Lee, J Jang
IEEE Electron Device Letters 41 (12), 1782-1785, 2020
212020
Millisecond stretched exponential recovery of threshold voltage for mechanically stressed flexible a-IGZO thin-film transistors
MM Billah, MM Hasan, J Jang
IEEE Electron Device Letters 39 (5), 699-702, 2018
162018
Millisecond positive bias recovery of negative bias illumination stressed amorphous InGaZnO thin-film transistors
MM Billah, J Jang
IEEE Electron Device Letters 38 (4), 477-480, 2017
162017
Analysis of the Solution-Processed a-SnOX and HfO2 Interface for Applications in Thin-Film Transistors
C Avis, MM Billah, YG Kim, AB Siddik, J Jang
ACS Applied Electronic Materials 3 (2), 651-657, 2021
152021
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