| Characteristics of p-Type Conduction in P-Doped MoS2 by Phosphorous Pentoxide during Chemical Vapor Deposition JS Lee, CS Park, TY Kim, YS Kim, EK Kim Nanomaterials 9 (9), 1278, 2019 | 34 | 2019 |
| Large scale MoS2 nanosheet logic circuits integrated by photolithography on glass H Kwon, PJ Jeon, JS Kim, TY Kim, H Yun, SW Lee, T Lee, S Im 2D Materials 3 (4), 044001, 2016 | 31 | 2016 |
| Characteristics of Cl-doped MoS2 field-effect transistors T Kim, Y Kim, EK Kim Sensors and Actuators A: Physical 312, 112165, 2020 | 16 | 2020 |
| Photoelectric Characteristics of a Large-Area n-MoS2/p-Si Heterojunction Structure Formed through Sulfurization Process Y Kim, T Kim, EK Kim Sensors 20 (24), 7340, 2020 | 13 | 2020 |
| High-performance MoS2/p+-Si heterojunction field-effect transistors by interface modulation Y Kim, T Kim, EK Kim Nano Research 15 (7), 6500-6506, 2022 | 9 | 2022 |
| Resistive switching behaviors of cobalt oxide films with structural change by post-thermal annealing J Ahn, T Kim, Y Kim, EK Kim Materials Science in Semiconductor Processing 156, 107295, 2023 | 4 | 2023 |
| Structural phase transition and resistive switching properties of Cu x O films during post-thermal annealing J Seo, T Kim, Y Kim, MS Jeong, EK Kim Nanotechnology 35 (18), 185703, 2024 | 2 | 2024 |
| Enhancement of InGaZnO Thin-Film Transistors by Contact Barrier Modulation Using Oxygen Defects T Kim, Y Kim, J Ahn, EK Kim ACS Applied Electronic Materials 5 (7), 3772-3779, 2023 | 2 | 2023 |
| A high-performance logic inverter achieved using mixed-dimensional WSe 2/n+-Si and MoS 2/p+-Si junction field-effect transistors Y Kim, T Kim, W Jeong, MS Jeong, EK Kim Journal of Materials Chemistry C 11 (44), 15649-15656, 2023 | 1 | 2023 |
| Improved characteristics of MoS2 transistors with selective doping using 1, 2-dichloroethane W Jeong, T Kim, Y Kim, MS Jeong, EK Kim Semiconductor Science and Technology 38 (7), 075013, 2023 | | 2023 |
