| Tunnel field-effect transistors as energy-efficient electronic switches AM Ionescu, H Riel nature 479 (7373), 329-337, 2011 | 3061 | 2011 |
| Realization of a silicon nanowire vertical surround‐gate field‐effect transistor V Schmidt, H Riel, S Senz, S Karg, W Riess, U Gösele small 2 (1), 85-88, 2006 | 503 | 2006 |
| Toward nanowire electronics J Appenzeller, J Knoch, MT Bjork, H Riel, H Schmid, W Riess IEEE Transactions on electron devices 55 (11), 2827-2845, 2008 | 467 | 2008 |
| Donor deactivation in silicon nanostructures MT Björk, H Schmid, J Knoch, H Riel, W Riess Nature nanotechnology 4 (2), 103-107, 2009 | 395 | 2009 |
| Reversible and controllable switching of a single-molecule junction E Lörtscher, JW Ciszek, J Tour, H Riel Small, 2006 | 361 | 2006 |
| Transient and steady-state behavior of space charges in multilayer organic light-emitting diodes B Ruhstaller, SA Carter, S Barth, H Riel, W Riess, JC Scott Journal of Applied Physics 89 (8), 4575-4586, 2001 | 326 | 2001 |
| Statistical approach to investigating transport through single molecules E Lörtscher, HB Weber, H Riel Physical review letters 98 (17), 176807, 2007 | 275 | 2007 |
| III–V compound semiconductor transistors—from planar to nanowire structures H Riel, LE Wernersson, M Hong, JA Del Alamo Mrs Bulletin 39 (8), 668-677, 2014 | 264 | 2014 |
| Electron mobility in tris (8-hydroxy-quinoline) aluminum thin films determined via transient electroluminescence from single-and multilayer organic light-emitting diodes S Barth, P Müller, H Riel, PF Seidler, W Riess, H Vestweber, H Bässler Journal of Applied physics 89 (7), 3711-3719, 2001 | 261 | 2001 |
| Phosphorescent top-emitting organic light-emitting devices with improved light outcoupling H Riel, S Karg, T Beierlein, B Ruhstaller, W Rieß Applied Physics Letters 82 (3), 466-468, 2003 | 256 | 2003 |
| Tuning the emission characteristics of top-emitting organic light-emitting devices by means of a dielectric capping layer: An experimental and theoretical study H Riel, S Karg, T Beierlein, W Rieß, K Neyts Journal of Applied Physics 94 (8), 5290-5296, 2003 | 252 | 2003 |
| Template-assisted selective epitaxy of III–V nanoscale devices for co-planar heterogeneous integration with Si H Schmid, M Borg, K Moselund, L Gignac, CM Breslin, J Bruley, D Cutaia, ... Applied Physics Letters 106 (23), 2015 | 251 | 2015 |
| Silicon nanowire tunneling field-effect transistors MT Björk, J Knoch, H Schmid, H Riel, W Riess Applied Physics Letters 92 (19), 2008 | 240 | 2008 |
| Temperature mapping of operating nanoscale devices by scanning probe thermometry F Menges, P Mensch, H Schmid, H Riel, A Stemmer, B Gotsmann Nature communications 7 (1), 10874, 2016 | 236 | 2016 |
| Influence of trapped and interfacial charges in organic multilayer light-emitting devices W Brütting, H Riel, T Beierlein, W Riess Journal of Applied Physics 89 (3), 1704-1712, 2001 | 203 | 2001 |
| Preparation of metallic films on elastomeric stamps and their application for contact processing and contact printing H Schmid, H Wolf, R Allenspach, H Riel, S Karg, B Michel, E Delamarche Advanced Functional Materials 13 (2), 145-153, 2003 | 195 | 2003 |
| Simulating electronic and optical processes in multilayer organic light-emitting devices B Ruhstaller, T Beierlein, H Riel, S Karg, JC Scott, W Riess IEEE Journal of Selected Topics in Quantum Electronics 9 (3), 723-731, 2003 | 184 | 2003 |
| Vertical III–V nanowire device integration on Si (100) M Borg, H Schmid, KE Moselund, G Signorello, L Gignac, J Bruley, ... Nano letters 14 (4), 1914-1920, 2014 | 177 | 2014 |
| Tuning the light emission from GaAs nanowires over 290 meV with uniaxial strain G Signorello, S Karg, MT Björk, B Gotsmann, H Riel Nano letters 13 (3), 917-924, 2013 | 170 | 2013 |
| Transport properties of a single-molecule diode E Lörtscher, B Gotsmann, Y Lee, L Yu, C Rettner, H Riel ACS nano 6 (6), 4931-4939, 2012 | 170 | 2012 |
Heinz SchmidIBM Research在 zurich.ibm.com 的电子邮件经过验证
