| Ge-on-Si laser operating at room temperature J Liu, X Sun, R Camacho-Aguilera, LC Kimerling, J Michel Optics letters 35 (5), 679-681, 2010 | 1141 | 2010 |
| An electrically pumped germanium laser RE Camacho-Aguilera, Y Cai, N Patel, JT Bessette, M Romagnoli, ... Optics express 20 (10), 11316-11320, 2012 | 1004 | 2012 |
| Ge-on-Si optoelectronics J Liu, R Camacho-Aguilera, JT Bessette, X Sun, X Wang, Y Cai, ... Thin solid films 520 (8), 3354-3360, 2012 | 206 | 2012 |
| Direct band gap narrowing in highly doped Ge R Camacho-Aguilera, Z Han, Y Cai, LC Kimerling, J Michel Applied Physics Letters 102 (15), 2013 | 132 | 2013 |
| High active carrier concentration in n-type, thin film Ge using delta-doping RE Camacho-Aguilera, Y Cai, JT Bessette, LC Kimerling, J Michel Optical Materials Express 2 (11), 1462-1469, 2012 | 87 | 2012 |
| Analysis of threshold current behavior for bulk and quantum-well germanium laser structures Y Cai, Z Han, X Wang, RE Camacho-Aguilera, LC Kimerling, J Michel, ... IEEE Journal of Selected Topics in Quantum Electronics 19 (4), 1901009-1901009, 2013 | 65 | 2013 |
| Spontaneous Formation of Complex Periodic Superstructures under High Interferential Illumination of Small‐Molecule‐Based Photochromic Materials E Ishow, R Camacho‐Aguilera, J Guérin, A Brosseau, K Nakatani Advanced Functional Materials 19 (5), 796-804, 2009 | 57 | 2009 |
| High phosphorous doped germanium: dopant diffusion and modeling Y Cai, R Camacho-Aguilera, JT Bessette, LC Kimerling, J Michel Journal of Applied Physics 112 (3), 2012 | 56 | 2012 |
| An electrically pumped Ge-on-Si laser J Michel, RE Camacho-Aguilera, Y Cai, N Patel, JT Bessette, ... OFC/NFOEC, 1-3, 2012 | 52 | 2012 |
| Infrared absorption of n-type tensile-strained Ge-on-Si X Wang, H Li, R Camacho-Aguilera, Y Cai, LC Kimerling, J Michel, J Liu Optics Letters 38 (5), 652-654, 2013 | 38 | 2013 |
| Ge-on-Si laser for silicon photonics RE Camacho-Aguilera Massachusetts Institute of Technology, 2013 | 21 | 2013 |
| High-concentration active doping in semiconductors and semiconductor devices produced by such doping JT Bessette, Y Cai, RE Camacho-Aguilera, J Liu, L Kimerling, J Michel US Patent 9,692,209, 2017 | 15 | 2017 |
| Band-engineered Ge-on-Si lasers J Liu, X Sun, R Camacho-Aguilera, Y Cai, J Michel, LC Kimerling 2010 International Electron Devices Meeting, 6.6. 1-6.6. 4, 2010 | 14 | 2010 |
| Engineering broadband and anisotropic photoluminescence emission from rare earth doped tellurite thin film photonic crystals PT Lin, M Vanhoutte, NS Patel, V Singh, J Hu, Y Cai, ... Optics Express 20 (3), 2124-2135, 2012 | 11 | 2012 |
| High n-type doped germanium for electrically pumped Ge laser Y Cai, R Camacho-Aguilera, JT Bessette, LC Kimerling, J Michel Integrated Photonics Research, Silicon and Nanophotonics, IM3A. 5, 2012 | 9 | 2012 |
| Electroluminescence of highly doped Ge pnn diodes for Si integrated lasers R Camacho-Aguilera, J Bessette, Y Cai, LC Kimerling, J Michel 8th IEEE International Conference on Group IV Photonics, 190-192, 2011 | 9 | 2011 |
| Optical characterization of Ge-on-Si laser gain media JT Bessette, R Camacho-Aguilera, Y Cai, LC Kimerling, J Michel 8th IEEE International Conference on Group IV Photonics, 130-132, 2011 | 8 | 2011 |
| Monolithic Ge-on-Si lasers for integrated photonics J Liu, X Sun, R Camacho-Aguilera, Y Cai, LC Kimerling, J Michel 7th IEEE International Conference on Group IV Photonics, 1-3, 2010 | 7 | 2010 |
| Ge-on-Si bufferless epitaxial growth for photonic devices RE Camacho-Aguilera, Y Cai, LC Kimerling, J Michel ECS Transactions 50 (9), 469, 2013 | 6 | 2013 |
| Ge laser and on-chip electronic-photonic integration J Liu, RE Camacho-Aguilera, Y Cai, JT Bessette, X Wang, LC Kimerling, ... 2012 17th Opto-Electronics and Communications Conference, 277-278, 2012 | 6 | 2012 |
