| Origins of enhanced thermoelectric power factor in topologically insulating Bi0. 64Sb1. 36Te3 thin films W Liu, H Chi, JC Walrath, AS Chang, VA Stoica, L Endicott, X Tang, ... Applied Physics Letters 108 (4), 2016 | 17 | 2016 |
| Selective area regrowth produces nonuniform Mg doping profiles in nonplanar GaN p–n junctions AS Chang, B Li, S Wang, M Nami, PJM Smeets, J Han, LJ Lauhon ACS Applied Electronic Materials 3 (2), 704-710, 2021 | 12 | 2021 |
| Unveiling the influence of selective-area-regrowth interfaces on local electronic properties of GaN pn junctions for efficient power devices AS Chang, B Li, S Wang, S Frisone, RS Goldman, J Han, LJ Lauhon Nano Energy 102, 107689, 2022 | 11 | 2022 |
| GaN lateral polar junction arrays with 3D control of doping by supersaturation modulated growth: A path toward III-nitride superjunctions D Szymanski, D Khachariya, TB Eldred, P Bagheri, S Washiyama, ... Journal of Applied Physics 131 (1), 2022 | 9 | 2022 |
| Atom probe tomography of nanoscale architectures in functional materials for electronic and photonic applications AS Chang, LJ Lauhon Current Opinion in Solid State and Materials Science 22 (5), 171-187, 2018 | 9 | 2018 |
| Influence of GaAs surface termination on GaSb/GaAs quantum dot structure and band offsets ES Zech, AS Chang, AJ Martin, JC Canniff, YH Lin, JM Millunchick, ... Applied Physics Letters 103 (8), 2013 | 9 | 2013 |
| Influence of quantum dot morphology on the optical properties of GaSb/GaAs multilayers C Greenhill, AS Chang, ES Zech, S Clark, G Balakrishnan, RS Goldman Applied Physics Letters 116 (25), 2020 | 7 | 2020 |
| Influence of Sb incorporation on InGaAs (Sb) N/GaAs band alignment AS Chang, ES Zech, TW Kim, YH Lin, LJ Mawst, RS Goldman Applied Physics Letters 105 (14), 2014 | 7 | 2014 |
| Formation and properties of InGaN QDs: Influence of substrates AS Chang, JC Walrath, T Frost, C Greenhill, J Occena, A Hazari, ... Applied Physics Letters 114 (6), 2019 | 3 | 2019 |
| Ordered horizontal Sb2Te3 nanowires induced by femtosecond lasers Y Li, VA Stoica, K Sun, W Liu, L Endicott, JC Walrath, AS Chang, YH Lin, ... Applied Physics Letters 105 (20), 2014 | 3 | 2014 |
| Selective area etching and doping of GaN for high-power applications B Li, S Wang, AS Chang, L Lauhon, Y Liu, B Raghothamachar, M Dudley, ... ECS Transactions 104 (7), 103, 2021 | 2 | 2021 |
| Influence of strain and dislocations on GaSb/GaAs quantum dots: From nested to staggered band alignment BC McGuigan, AS Chang, C Greenhill, HT Johnson, RS Goldman Journal of Applied Physics 131 (8), 2022 | 1 | 2022 |
| Understanding radiative emissions in the vicinity of selected-area regrown GaN diodes S Frisone, A Chang, S Wang, B Li, R Goldman, L Lauhon, J Han APS March Meeting Abstracts 2022, D67. 005, 2022 | 1 | 2022 |
| Finding Your Home: Large-Scale Recommendation in a Vibrant Marketplace E Ringger, A Chang, D Fagnan, S Kamath, O Linda, W Liu, I Sofer, ... ComplexRec 2018, 13, 2018 | 1 | 2018 |
| Influence of Quantum Dot Atomic Structure and Strain Relaxation on GaSb/GaAs Band Offsets ES Zech, AS Chang, AJ Martin, JC Canniff, YH Lin, JM Millunchick, ... Appl. Phys. Lett. 103, 2013 | 1 | 2013 |
| Probing Non-Stoichiometry in GaAsBi and GaAsNBi Alloys Using Local-Electrode Atom Probe Tomography J Mitchell, C Greenhill, TY Huang, K Hammond, T Jen, A Chang, ... APS March Meeting Abstracts 2022, A67. 007, 2022 | | 2022 |
| Exploring Solute Distribution and Clustering in GaAsBi and GaAsNBi Alloys Using Local-Electrode Atom Probe Tomography J Mitchell, C Greenhill, TY Huang, K Hammond, T Jen, R Goldman, ... APS March Meeting Abstracts 2021, H71. 304, 2021 | | 2021 |
| Probing Topological Surface States at Room Temperature in (Bi1-xSbx)2Te3Films C Greenhill, J Walrath, V Stoica, A Chang, YH Lin, C Boone, R Clarke, ... APS March Meeting Abstracts 2021, U71. 024, 2021 | | 2021 |
| Influence of QD Morphology on Photoluminescence in GaSb/GaAs Multilayers C Greenhill, E Zech, A Chang, S Clark, G Balakrishnan, R Goldman APS March Meeting Abstracts 2019, S11. 010, 2019 | | 2019 |
| \textbf {Profiling the local carrier concentration and dopant distribution across a semiconductor quantum dot} JC Walrath, AS Chang, YH Lin, S Huang, RS Goldman Bulletin of the American Physical Society 61, 2016 | | 2016 |
