Shape transition of germanium nanocrystals on a silicon (001) surface from pyramids to domes RS Medeiros-Ribeiro, G., Bratkovski, A.M., Kamins, T Science 279 (5349), 353-355, 1998 | 1053 | 1998 |
Tunneling of electrons in conventional and half-metallic systems: Towards very large magnetoresistance AM Bratkovsky Physical Review B 56 (5), 2344, 1997 | 408 | 1997 |
General Green’s-function formalism for transport calculations with Hamiltonians and giant magnetoresistance in Co- and Ni-based magnetic multilayers S Sanvito, CJ Lambert, JH Jefferson, AM Bratkovsky Physical review B 59 (18), 11936, 1999 | 387 | 1999 |
Carrier density collapse and colossal magnetoresistance in doped manganites AS Alexandrov, AM Bratkovsky Physical review letters 82 (1), 141, 1999 | 338 | 1999 |
Abrupt appearance of the domain pattern and fatigue of thin ferroelectric films AM Bratkovsky, AP Levanyuk AIP Conference Proceedings 535 (1), 218-228, 2000 | 312 | 2000 |
Gold nanofingers for molecule trapping and detection M Hu, FS Ou, W Wu, I Naumov, X Li, AM Bratkovsky, RS Williams, Z Li Journal of the American Chemical Society 132 (37), 12820-12822, 2010 | 254 | 2010 |
Bond-order potentials: Theory and implementation AP Horsfield, AM Bratkovsky, M Fearn, DG Pettifor, M Aoki Physical Review B 53 (19), 12694, 1996 | 254 | 1996 |
Current rectification by molecules with asymmetric tunneling barriers PE Kornilovitch, AM Bratkovsky, RS Williams Physical Review B 66 (16), 165436, 2002 | 243 | 2002 |
Vortex polarization states in nanoscale ferroelectric arrays BJ Rodriguez, XS Gao, LF Liu, W Lee, II Naumov, AM Bratkovsky, ... Nano letters 9 (3), 1127-1131, 2009 | 233 | 2009 |
Hot-spot engineering in polygonal nanofinger assemblies for surface enhanced Raman spectroscopy FS Ou, M Hu, I Naumov, A Kim, W Wu, AM Bratkovsky, X Li, RS Williams, ... Nano letters 11 (6), 2538-2542, 2011 | 210 | 2011 |
Conditions for conductance quantization in realistic models of atomic-scale metallic contacts AM Bratkovsky, AP Sutton, TN Todorov Physical Review B 52 (7), 5036, 1995 | 205 | 1995 |
Smearing of phase transition due to a surface effect or a bulk inhomogeneity in ferroelectric nanostructures AM Bratkovsky, AP Levanyuk arXiv preprint cond-mat/0402100, 2004 | 199 | 2004 |
Assisted tunneling in ferromagnetic junctions and half-metallic oxides AM Bratkovsky Applied Physics Letters 72 (18), 2334-2336, 1998 | 174 | 1998 |
Very large dielectric response of thin ferroelectric films with the dead layers AM Bratkovsky, AP Levanyuk Physical Review B 63 (13), 132103, 2001 | 168 | 2001 |
Memory effect in a molecular quantum dot with strong electron-vibron interaction AS Alexandrov, AM Bratkovsky Physical Review B 67 (23), 235312, 2003 | 143 | 2003 |
Hall effect and resistivity of high-T c oxides in the bipolaron model AS Alexandrov, AM Bratkovsky, NF Mott Physical review letters 72 (11), 1734, 1994 | 140 | 1994 |
Optical metamaterials at near and mid-IR range fabricated by nanoimprint lithography W Wu, E Kim, E Ponizovskaya, Y Liu, Z Yu, N Fang, YR Shen, ... Applied Physics A 87, 143-150, 2007 | 129 | 2007 |
Quantized conductance coincides with state instability and excess noise in tantalum oxide memristors W Yi, SE Savel'Ev, G Medeiros-Ribeiro, F Miao, MX Zhang, JJ Yang, ... Nature communications 7 (1), 11142, 2016 | 128 | 2016 |
Orientational dependence of current through molecular films PE Kornilovitch, AM Bratkovsky Physical Review B 64 (19), 195413, 2001 | 128 | 2001 |
Depolarizing field and “real” hysteresis loops in nanometer-scale ferroelectric films AM Bratkovsky, AP Levanyuk Applied physics letters 89 (25), 2006 | 126 | 2006 |