Theory of the electronic structure of GaN/AlN hexagonal quantum dots AD Andreev, EP O’reilly Physical Review B 62 (23), 15851, 2000 | 446 | 2000 |
Strain distributions in quantum dots of arbitrary shape AD Andreev, JR Downes, DA Faux, EP O’reilly Journal of Applied Physics 86 (1), 297-305, 1999 | 281 | 1999 |
A quantitative study of radiative, Auger, and defect related recombination processes in 1.3-μm GaInNAs-based quantum-well lasers R Fehse, S Tomic, AR Adams, SJ Sweeney, EP O'Reilly, A Andreev, ... Selected Topics in Quantum Electronics, IEEE Journal of 8 (4), 801-810, 2002 | 209 | 2002 |
Mechanism of suppression of Auger recombination processes in type‐II heterostructures GG Zegrya, AD Andreev Applied Physics Letters 67 (18), 2681-2683, 1995 | 204 | 1995 |
Calculation of electric field and optical transitions in InGaN∕ GaN quantum wells UME Christmas, AD Andreev, DA Faux Journal of applied physics 98 (7), 2005 | 176 | 2005 |
Theoretical and experimental analysis of 1.3-μm InGaAsN/GaAs lasers S Tomic, EP O'Reilly, R Fehse, SJ Sweeney, AR Adams, AD Andreev, ... Selected Topics in Quantum Electronics, IEEE Journal of 9 (5), 1228-1238, 2003 | 176 | 2003 |
High-performance 40nm gate length InSb p-channel compressively strained quantum well field effect transistors for low-power (VCC= 0.5 V) logic applications M Radosavljevic, T Ashley, A Andreev, SD Coomber, G Dewey, ... 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 135 | 2008 |
Optical transitions and radiative lifetime in GaN/AlN self-organized quantum dots AD Andreev, EP O’Reilly Applied Physics Letters 79 (4), 521-523, 2001 | 123 | 2001 |
Effect of thermal annealing and strain engineering on the fine structure of quantum dot excitons AI Tartakovskii, MN Makhonin, IR Sellers, J Cahill, AD Andreev, ... Physical Review B—Condensed Matter and Materials Physics 70 (19), 193303, 2004 | 111 | 2004 |
Carrier transport and recombination in p-doped and intrinsic 1.3 μm InAs/GaAs quantum-dot lasers IP Marko, NF Masse, SJ Sweeney, AD Andreev, AR Adams, N Hatori, ... Applied Physics Letters 87 (21), 211114-211114-3, 2005 | 109 | 2005 |
Anisotropy-induced optical transitions in PbSe and PbS spherical quantum dots AD Andreev, AA Lipovskii Physical Review B 59 (23), 15402, 1999 | 109 | 1999 |
Derivation of built-in polarization potentials in nitride-based semiconductor quantum dots DP Williams, AD Andreev, EP O’Reilly, DA Faux Physical Review B—Condensed Matter and Materials Physics 72 (23), 235318, 2005 | 101 | 2005 |
Structural analysis of strained quantum dots using nuclear magnetic resonance EA Chekhovich, KV Kavokin, J Puebla, AB Krysa, M Hopkinson, ... Nature nanotechnology 7 (10), 646-650, 2012 | 100 | 2012 |
InSb1− xNx growth and devices T Ashley, TM Burke, GJ Pryce, AR Adams, A Andreev, BN Murdin, ... Solid-State Electronics 47 (3), 387-394, 2003 | 88 | 2003 |
The role of Auger recombination in InAs 1.3-μm quantum-dot lasers investigated using high hydrostatic pressure IP Marko, AD Andreev, AR Adams, R Krebs, JP Reithmaier, A Forchel Selected Topics in Quantum Electronics, IEEE Journal of 9 (5), 1300-1307, 2003 | 81 | 2003 |
Strain distribution in GaN∕ AlN quantum-dot superlattices E Sarigiannidou, E Monroy, B Daudin, JL Rouvière, AD Andreev Applied Physics Letters 87 (20), 2005 | 78 | 2005 |
Optical absorption in PbSe spherical quantum dots embedded in glass matrix AD Andreev, EV Kolobkova, AA Lipovskii Journal of Applied Physics 88 (2), 750-757, 2000 | 52 | 2000 |
Optical matrix element in InAs/GaAs quantum dots: Dependence on quantum dot parameters AD Andreev, EP OReilly Applied Physics Letters 87 (21), 213106-213106-3, 2005 | 50 | 2005 |
Theory of conduction band structure of and dilute nitride alloys A Lindsay, EP O’Reilly, AD Andreev, T Ashley Physical Review B—Condensed Matter and Materials Physics 77 (16), 165205, 2008 | 48 | 2008 |
Theoretical study of Auger recombination in a GaInNAs 1.3 μm quantum well laser structure AD Andreev, EP O’Reilly Applied physics letters 84 (11), 1826-1828, 2004 | 43 | 2004 |