| A comparative study of different physics-based NBTI models S Mahapatra, N Goel, S Desai, S Gupta, B Jose, S Mukhopadhyay, ... Electron Devices, IEEE Transactions on 60 (3), 901-916, 2013 | 333 | 2013 |
| A critical re-evaluation of the usefulness of RD framework in predicting NBTI stress and recovery S Mahapatra, AE Islam, S Deora, VD Maheta, K Joshi, A Jain, MA Alam 2011 International Reliability Physics Symposium, 6A. 3.1-6A. 3.10, 2011 | 123 | 2011 |
| A consistent physical framework for N and P BTI in HKMG MOSFETs K Joshi, S Mukhopadhyay, N Goel, S Mahapatra 2012 IEEE International Reliability Physics Symposium (IRPS), 5A. 3.1-5A. 3.10, 2012 | 109 | 2012 |
| HKMG process impact on N, P BTI: Role of thermal IL scaling, IL/HK integration and post HK nitridation K Joshi, S Hung, S Mukhopadhyay, V Chaudhary, N Nanaware, ... 2013 IEEE International Reliability Physics Symposium (IRPS), 4C. 2.1-4C. 2.10, 2013 | 65 | 2013 |
| A comprehensive AC/DC NBTI model: Stress, recovery, frequency, duty cycle and process dependence S Desai, S Mukhopadhyay, N Goel, N Nanaware, B Jose, K Joshi, ... 2013 IEEE International Reliability Physics Symposium (IRPS), XT. 2.1-XT. 2.11, 2013 | 59 | 2013 |
| A comprehensive modeling framework for gate stack process dependence of DC and AC NBTI in SiON and HKMG p-MOSFETs N Goel, K Joshi, S Mukhopadhyay, N Nanaware, S Mahapatra Microelectronics Reliability 54 (3), 491-519, 2014 | 49 | 2014 |
| Trap generation in IL and HK layers during BTI/TDDB stress in scaled HKMG N and P MOSFETs S Mukhopadhyay, K Joshi, V Chaudhary, N Goel, S De, RK Pandey, ... 2014 IEEE International Reliability Physics Symposium, GD. 3.1-GD. 3.11, 2014 | 43 | 2014 |
| Intrinsic correlation between PBTI and TDDB degradations in nMOS HK/MG dielectrics J Yang, M Masuduzzaman, K Joshi, S Mukhopadhyay, J Kang, ... 2012 IEEE International Reliability Physics Symposium (IRPS), 5D. 4.1-5D. 4.7, 2012 | 40 | 2012 |
| Characterization Methods for BTI Degradation and Associated Gate Insulator Defects S Mahapatra, N Goel, A Chaudhary, K Joshi, S Mukhopadhyay Fundamentals of Bias Temperature Instability in MOS Transistors, 43-92, 2016 | 30 | 2016 |
| Understanding process impact of hole traps and NBTI in HKMG p-MOSFETs using measurements and atomistic simulations S Mahapatra, S De, K Joshi, S Mukhopadhyay, RK Pandey, K Murali IEEE Electron Device Letters 34 (8), 963-965, 2013 | 28 | 2013 |
| A comprehensive and critical re-assessment of 2-stage energy level NBTI model S Gupta, B Jose, K Joshi, A Jain, MA Alam, S Mahapatra 2012 IEEE International Reliability Physics Symposium (IRPS), XT. 3.1-XT. 3.6, 2012 | 26 | 2012 |
| A detailed study of gate insulator process dependence of NBTI using a compact model K Joshi, S Mukhopadhyay, N Goel, N Nanware, S Mahapatra IEEE Transactions on Electron Devices 61 (2), 408-415, 2014 | 21 | 2014 |
| Characterization and modeling of NBTI stress, recovery, material dependence and AC degradation using RD framework S Mahapatra, AE Islam, S Deora, VD Maheta, K Joshi, MA Alam 18th IEEE International Symposium on the Physical and Failure Analysis of …, 2011 | 15 | 2011 |
| L. 2 Device Architecture, Material and Process Dependencies… 33 Date, S. Datta, A. Brand, J. Swenberg, S. Mahapatra K Joshi, S Hung, S Mukhopadhyay, V Chaudhary, N Nanaware, ... IEEE International Reliability Physics Symposium Proceedings C 4, 2.1, 2013 | 10 | 2013 |
| Scaled gate stacks for sub-20-nm CMOS logic applications through integration of thermal IL and ALD HfOx K Joshi, S Hung, S Mukhopadhyay, T Sato, M Bevan, B Rajamohanan, ... IEEE Electron Device Letters 34 (1), 3-5, 2012 | 10 | 2012 |
| Physical Mechanism of BTI Degradation—Modeling of Process and Material Dependence S Mahapatra, K Joshi, S Mukhopadhyay, A Chaudhary, N Goel Fundamentals of Bias Temperature Instability in MOS Transistors, 127-179, 2016 | 9 | 2016 |
| A new insight into BEOL TDDB lifetime model for advanced technology scaling MN Chang, YH Lee, SY Lee, K Joshi, CC Ko, CC Chiu, K Wu 2015 IEEE International Electron Devices Meeting (IEDM), 7.4. 1-7.4. 4, 2015 | 9 | 2015 |
| In-situ atomic force microscopic study of reverse pulse plated Cu/Co-Ni-Cu films D Gupta, AC Nayak, J Mazher, R Sengar, KP Joshi, RK Pandey Journal of materials science 39, 1615-1620, 2004 | 9 | 2004 |
| Circuit-based reliability consideration in FinFET technology YH Lee, PJ Liao, K Joshi, DS Huang 2017 IEEE 24th International Symposium on the Physical and Failure Analysis …, 2017 | 7 | 2017 |
| Study of dynamic TDDB in scaled FinFET technologies K Joshi, SW Chang, DS Huang, PJ Liao, YH Lee 2018 IEEE International Reliability Physics Symposium (IRPS), P-GD. 5-1-P-GD …, 2018 | 6 | 2018 |
Souvik MahapatraProfessor, EE Dept, IIT Bombay (Fellow of IEEE, INSA, IASc, INAE)在 ee.iitb.ac.in 的电子邮件经过验证
