| Electrical spin injection in a ferromagnetic semiconductor heterostructure Y Ohno, DK Young, B Beschoten, F Matsukura, H Ohno, DD Awschalom Nature 402 (6763), 790-792, 1999 | 3268 | 1999 |
| Electric-field control of ferromagnetism H Ohno, D Chiba, F Matsukura, T Omiya, E Abe, T Dietl, Y Ohno, K Ohtani Nature 408 (6815), 944-946, 2000 | 2637 | 2000 |
| Quantum Hall effect in polar oxide heterostructures A Tsukazaki, A Ohtomo, T Kita, Y Ohno, H Ohno, M Kawasaki Science 315 (5817), 1388-1391, 2007 | 718 | 2007 |
| Magnetic tunnel junctions for spintronic memories and beyond S Ikeda, J Hayakawa, YM Lee, F Matsukura, Y Ohno, T Hanyu, H Ohno IEEE Transactions on Electron Devices 54 (5), 991-1002, 2007 | 645 | 2007 |
| Spin relaxation in GaAs (110) quantum wells Y Ohno, R Terauchi, T Adachi, F Matsukura, H Ohno Physical Review Letters 83 (20), 4196, 1999 | 584 | 1999 |
| High mobility thin film transistors with transparent ZnO channels J Nishii, FM Hossain, S Takagi, T Aita, K Saikusa, Y Ohmaki, I Ohkubo, ... Japanese journal of applied physics 42 (4A), L347, 2003 | 396 | 2003 |
| Observation of the fractional quantum Hall effect in an oxide A Tsukazaki, S Akasaka, K Nakahara, Y Ohno, H Ohno, D Maryenko, ... Nature materials 9 (11), 889-893, 2010 | 379 | 2010 |
| Spontaneous splitting of ferromagnetic (Ga, Mn) As valence band observed by resonant tunneling spectroscopy H Ohno, N Akiba, F Matsukura, A Shen, K Ohtani, Y Ohno Applied physics letters 73 (3), 363-365, 1998 | 207 | 1998 |
| Magnetoresistance effect and interlayer coupling of (Ga, Mn) As trilayer structures D Chiba, N Akiba, F Matsukura, Y Ohno, H Ohno Applied Physics Letters 77 (12), 1873-1875, 2000 | 200 | 2000 |
| Semiconductor spin electronics H Ohno, F Matsukura, Y Ohno JSAP international 5 (2002), 4-13, 2002 | 178 | 2002 |
| A spin Esaki diode M Kohda, Y Ohno, K Takamura, F Matsukura, H Ohno Japanese Journal of Applied Physics 40 (12A), L1274, 2001 | 172 | 2001 |
| Magnetotransport properties of (Ga, Mn) As investigated at low temperature and high magnetic field T Omiya, F Matsukura, T Dietl, Y Ohno, T Sakon, M Motokawa, H Ohno Physica E: Low-dimensional Systems and Nanostructures 7 (3-4), 976-980, 2000 | 167 | 2000 |
| Phase Transition in the Bilayer Quantum Hall State A Sawada, ZF Ezawa, H Ohno, Y Horikoshi, Y Ohno, S Kishimoto, ... Physical review letters 80 (20), 4534, 1998 | 138 | 1998 |
| Transport properties of two‐dimensional electron gas in AlGaAs/GaAs selectively doped heterojunctions with embedded InAs quantum dots H Sakaki, G Yusa, T Someya, Y Ohno, T Noda, H Akiyama, Y Kadoya, ... Applied physics letters 67 (23), 3444-3446, 1995 | 136 | 1995 |
| Molecular beam epitaxy of III–V diluted magnetic semiconductor (Ga, Mn) Sb E Abe, F Matsukura, H Yasuda, Y Ohno, H Ohno Physica E: Low-dimensional Systems and Nanostructures 7 (3-4), 981-985, 2000 | 123 | 2000 |
| Generation and control of polarization-entangled photons from GaAs island quantum dots by an electric field M Ghali, K Ohtani, Y Ohno, H Ohno Nature communications 3 (1), 661, 2012 | 114 | 2012 |
| Hall magnetometry on a single iron nanoparticle Y Li, P Xiong, S Von Molnár, S Wirth, Y Ohno, H Ohno Applied Physics Letters 80 (24), 4644-4646, 2002 | 96 | 2002 |
| Anisotropic electrical spin injection in ferromagnetic semiconductor heterostructures DK Young, E Johnston-Halperin, DD Awschalom, Y Ohno, H Ohno Applied physics letters 80 (9), 1598-1600, 2002 | 84 | 2002 |
| Interlayer exchange in (Ga, Mn) As/(Al, Ga) As/(Ga, Mn) As semiconducting ferromagnet/nonmagnet/ferromagnet trilayer structures N Akiba, F Matsukura, A Shen, Y Ohno, H Ohno, A Oiwa, S Katsumoto, ... Applied physics letters 73 (15), 2122-2124, 1998 | 80 | 1998 |
| Spin relaxation in n-modulation doped GaAs/AlGaAs (110) quantum wells T Adachi, Y Ohno, F Matsukura, H Ohno Physica E: Low-dimensional Systems and Nanostructures 10 (1-3), 36-39, 2001 | 79 | 2001 |
