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Kyungjune Cho
Kyungjune Cho
在 kist.re.kr 的电子邮件经过验证 - 首页
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引用次数
引用次数
年份
Recent progress in inkjet‐printed thin‐film transistors
S Chung, K Cho, T Lee
Advanced science 6 (6), 1801445, 2019
2752019
Oxygen environmental and passivation effects on molybdenum disulfide field effect transistors
W Park, J Park, J Jang, H Lee, H Jeong, K Cho, S Hong, T Lee
Nanotechnology 24 (9), 095202, 2013
2342013
Electric Stress-Induced Threshold Voltage Instability of Multilayer MoS2 Field Effect Transistors
K Cho, W Park, J Park, H Jeong, J Jang, TY Kim, WK Hong, S Hong, T Lee
ACS nano 7 (9), 7751-7758, 2013
2312013
Electrical and Optical Characterization of MoS2 with Sulfur Vacancy Passivation by Treatment with Alkanethiol Molecules
K Cho, M Min, TY Kim, H Jeong, J Pak, JK Kim, J Jang, SJ Yun, YH Lee, ...
ACS nano 9 (8), 8044-8053, 2015
2302015
Photoelectron Spectroscopic Imaging and Device Applications of Large-Area Patternable Single-Layer MoS2 Synthesized by Chemical Vapor Deposition
W Park, J Baik, TY Kim, K Cho, WK Hong, HJ Shin, T Lee
ACS nano 8 (5), 4961-4968, 2014
1502014
Enhancement of photodetection characteristics of MoS 2 field effect transistors using surface treatment with copper phthalocyanine
J Pak, J Jang, K Cho, TY Kim, JK Kim, Y Song, WK Hong, M Min, H Lee, ...
Nanoscale 7 (44), 18780-18788, 2015
1232015
Irradiation Effects of High-Energy Proton Beams on MoS2 Field Effect Transistors
TY Kim, K Cho, W Park, J Park, Y Song, S Hong, WK Hong, T Lee
ACS nano 8 (3), 2774-2781, 2014
1232014
Transparent Large-Area MoS2 Phototransistors with Inkjet-Printed Components on Flexible Platforms
TY Kim, J Ha, K Cho, J Pak, J Seo, J Park, JK Kim, S Chung, Y Hong, ...
ACS nano 11 (10), 10273-10280, 2017
872017
Recent advances in interface engineering of transition-metal dichalcogenides with organic molecules and polymers
K Cho, J Pak, S Chung, T Lee
ACS nano 13 (9), 9713-9734, 2019
822019
Redox‐induced asymmetric electrical characteristics of ferrocene‐alkanethiolate molecular devices on rigid and flexible substrates
H Jeong, D Kim, G Wang, S Park, H Lee, K Cho, WT Hwang, MH Yoon, ...
Advanced Functional Materials 24 (17), 2472-2480, 2014
772014
Enhanced charge injection properties of organic field‐effect transistor by molecular implantation doping
Y Kim, S Chung, K Cho, D Harkin, WT Hwang, D Yoo, JK Kim, W Lee, ...
Advanced Materials 31 (10), 1806697, 2019
732019
Contact‐Engineered Electrical Properties of MoS2 Field‐Effect Transistors via Selectively Deposited Thiol‐Molecules
K Cho, J Pak, JK Kim, K Kang, TY Kim, J Shin, BY Choi, S Chung, T Lee
Advanced Materials 30 (18), 1705540, 2018
692018
Trap-mediated electronic transport properties of gate-tunable pentacene/MoS2 pn heterojunction diodes
JK Kim, K Cho, TY Kim, J Pak, J Jang, Y Song, Y Kim, BY Choi, S Chung, ...
Scientific reports 6 (1), 1-8, 2016
672016
Gate-bias stress-dependent photoconductive characteristics of multi-layer MoS2 field-effect transistors
K Cho, TY Kim, W Park, J Park, D Kim, J Jang, H Jeong, S Hong, T Lee
Nanotechnology 25 (15), 155201, 2014
632014
Two-Dimensional Thickness-Dependent Avalanche Breakdown Phenomena in MoS2 Field-Effect Transistors under High Electric Fields
J Pak, Y Jang, J Byun, K Cho, TY Kim, JK Kim, BY Choi, J Shin, Y Hong, ...
ACS nano 12 (7), 7109-7116, 2018
542018
Intrinsic Optoelectronic Characteristics of MoS2 Phototransistors via a Fully Transparent van der Waals Heterostructure
J Pak, I Lee, K Cho, JK Kim, H Jeong, WT Hwang, GH Ahn, K Kang, ...
ACS nano 13 (8), 9638-9646, 2019
502019
Origin of the quasi-quantized Hall effect in ZrTe5
S Galeski, T Ehmcke, R Wawrzyńczak, PM Lozano, K Cho, A Sharma, ...
Nature communications 12 (1), 3197, 2021
452021
Investigation of time–dependent resistive switching behaviors of unipolar nonvolatile organic memory devices
W Lee, Y Kim, Y Song, K Cho, D Yoo, H Ahn, K Kang, T Lee
Advanced Functional Materials 28 (35), 1801162, 2018
412018
Ultrasensitive Photodetection in MoS2 Avalanche Phototransistors
J Seo, JH Lee, J Pak, K Cho, JK Kim, J Kim, J Jang, H Ahn, SC Lim, ...
Advanced science 8 (19), 2102437, 2021
402021
Improved photoswitching response times of MoS2 field-effect transistors by stacking p-type copper phthalocyanine layer
J Pak, M Min, K Cho, DH Lien, GH Ahn, J Jang, D Yoo, S Chung, A Javey, ...
Applied Physics Letters 109 (18), 2016
382016
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