| A New Physical Method Based on–Simulations for the Characterization of the Interfacial and Bulk Defect Density in High-/III-V MOSFETs G Sereni, L Vandelli, D Veksler, L Larcher IEEE Transactions on Electron Devices 62 (3), 705-712, 2015 | 22 | 2015 |
| Low leakage stoichiometric SrTiO3 dielectric for advanced metal–insulator–metal capacitors M Popovici, B Kaczer, VV Afanas' Ev, G Sereni, L Larcher, A Redolfi, ... physica status solidi (RRL)–Rapid Research Letters 10 (5), 420-425, 2016 | 12 | 2016 |
| A new method for extracting interface state and border trap densities in high-k/III-V MOSFETs G Sereni, L Vandelli, L Larcher, L Morassi, D Veksler, G Bersuker 2014 IEEE International Reliability Physics Symposium, 2C. 3.1-2C. 3.6, 2014 | 11 | 2014 |
| Extraction of the Defect Distributions in DRAM Capacitor Using–and–Sensitivity Maps G Sereni, L Larcher, B Kaczer, MI Popovici IEEE Electron Device Letters 37 (10), 1280-1283, 2016 | 10 | 2016 |
| Effects of the target on the performance of an ultra-low power eddy current displacement sensor for industrial applications A Bertacchini, M Lasagni, G Sereni Electronics 9 (8), 1287, 2020 | 8 | 2020 |
| A novel technique exploiting C–V, G–V and I–V simulations to investigate defect distribution and native oxide in high-κ dielectrics for III–V MOSFETs G Sereni, L Larcher, L Vandelli, D Veksler, T Kim, D Koh, G Bersuker Microelectronic Engineering 147, 281-284, 2015 | 8 | 2015 |
| Ultra-Low Power Displacement Sensor A Bertacchini, M Lasagni, G Sereni Applications in Electronics Pervading Industry, Environment and Society …, 2020 | 2 | 2020 |
| Characterization and Modeling of Low-Cost Contact-Mode Triboelectric Devices for Energy Harvesting A Bertacchini, M Lasagni, G Sereni, L Larcher, P Pavan IECON 2018-44th Annual Conference of the IEEE Industrial Electronics Society …, 2018 | 1 | 2018 |
| defect spectroscopy and engineering for nanoscale electron device applications: A novel simulation-based methodology L Larcher, G Sereni, L Vandelli ECS Transactions 72 (2), 167, 2016 | 1 | 2016 |
| Electrical defect spectroscopy and reliability prediction through a novel simulation-based methodology L Larcher, G Sereni, A Padovani, L Vandelli 2016 International Symposium on VLSI Technology, Systems and Application …, 2016 | 1 | 2016 |
| Substrate and temperature influence on the trap density distribution in high-k III-V MOSFETs G Sereni, L Vandelli, R Cavicchioli, L Larcher, D Veksler, G Bersuker 2015 IEEE International Reliability Physics Symposium, 2E. 6.1-2E. 6.5, 2015 | 1 | 2015 |
| Spettroscopia dei difetti atomici nei materiali ad alta permittività elettrica per dispositivi CMOS e beyond CMOS G SERENI | | 2017 |
| Extraction of interface and border traps in beyond-Si devices by accounting for generation and recombination in the semiconductor G Sereni, L Larcher 2015 IEEE International Integrated Reliability Workshop (IIRW), 46-51, 2015 | | 2015 |
| IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP FINAL REPORT AS Teng, R Tu, R Chen, MY Lee, A Kuo, A Dai, SC Lee, T Wen, B Han, ... | | 2012 |
Luca VandelliPh.D. University Modena and Reggio Emilia在 unimore.it 的电子邮件经过验证
