| Status and prospects of cubic silicon carbide power electronics device technology F Li, F Roccaforte, G Greco, P Fiorenza, F La Via, A Pérez-Tomas, ... Materials 14 (19), 5831, 2021 | 23 | 2021 |
| On the Ti3SiC2 Metallic Phase Formation for Robust p-Type 4H-SiC Ohmic Contacts MR Jennings, CA Fisher, D Walker, A Sanchez, A Pérez-Tomás, ... Materials Science Forum 778, 693-696, 2014 | 21 | 2014 |
| High-temperature (1200–1400° C) dry oxidation of 3C-SiC on silicon YK Sharma, F Li, MR Jennings, CA Fisher, A Pérez-Tomás, S Thomas, ... Journal of Electronic Materials 44, 4167-4174, 2015 | 20 | 2015 |
| The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment AB Renz, VA Shah, OJ Vavasour, Y Bonyadi, F Li, T Dai, GWC Baker, ... Journal of Applied Physics 127 (2), 2020 | 18 | 2020 |
| 3C-SiC transistor with ohmic contacts defined at room temperature F Li, Y Sharma, D Walker, S Hindmarsh, M Jennings, D Martin, C Fisher, ... IEEE Electron Device Letters 37 (9), 1189-1192, 2016 | 17 | 2016 |
| The improvement of atomic layer deposited SiO2/4H-SiC interfaces via a high temperature forming gas anneal AB Renz, OJ Vavasour, PM Gammon, F Li, T Dai, M Antoniou, GWC Baker, ... Materials Science in Semiconductor Processing 122, 105527, 2021 | 15 | 2021 |
| Single event effects and total ionising dose in 600V Si-on-SiC LDMOS transistors for rad-hard space applications KB Ali, PM Gammon, CW Chan, F Li, V Pathirana, T Trajkovic, F Gity, ... 2017 47th European Solid-State Device Research Conference (ESSDERC), 236-239, 2017 | 15 | 2017 |
| Development, characterisation and simulation of wafer bonded Si-on-SiC substrates PM Gammon, CW Chan, F Li, F Gity, T Trajkovic, V Pathirana, D Flandre, ... Materials Science in Semiconductor Processing 78, 69-74, 2018 | 14 | 2018 |
| Comparative study of RESURF Si/SiC LDMOSFETs for high-temperature applications using TCAD modeling CW Chan, F Li, A Sanchez, PA Mawby, PM Gammon IEEE Transactions on Electron Devices 64 (9), 3713-3718, 2017 | 14 | 2017 |
| High temperature nitridation of 4H-SiC MOSFETs H Rong, YK Sharma, TX Dai, F Li, MR Jennings, S Russell, DM Martin, ... Materials Science Forum 858, 623-626, 2016 | 13 | 2016 |
| Electrical activation of nitrogen heavily implanted 3C-SiC (1 0 0) F Li, Y Sharma, V Shah, M Jennings, A Pérez-Tomás, M Myronov, ... Applied Surface Science 353, 958-963, 2015 | 12 | 2015 |
| A first evaluation of thick oxide 3C-SiC MOS capacitors reliability F Li, Q Song, A Perez-Tomas, V Shah, Y Sharma, D Hamilton, C Fisher, ... IEEE Transactions on Electron Devices 67 (1), 237-242, 2019 | 10 | 2019 |
| Study of breakdown characteristics of 4H-SiC Schottky diode with improved 2-step mesa junction termination extension H Rong, Z Mohammadi, YK Sharma, F Li, MR Jennings, PA Mawby 2014 16th European Conference on Power Electronics and Applications, 1-10, 2014 | 9 | 2014 |
| Cryogenic characterisation and modelling of commercial SiC MOSFETs LJ Woodend, PM Gammon, VA Shah, A Pérez-Tomás, F Li, DP Hamilton, ... Materials Science Forum 897, 557-560, 2017 | 8 | 2017 |
| Optimization of 1700-V 4H-SiC superjunction Schottky rectifiers with implanted p-pillars for practical realization GWC Baker, C Chan, AB Renz, Y Qi, T Dai, F Li, VA Shah, PA Mawby, ... IEEE Transactions on Electron Devices 68 (7), 3497-3504, 2021 | 7 | 2021 |
| Development of high-quality gate oxide on 4H-SiC using atomic layer deposition AB Renz, OJ Vavasour, PM Gammon, F Li, TX Dai, S Esfahani, ... Materials Science Forum 1004, 547-553, 2020 | 7 | 2020 |
| The effect of interfacial charge on the development of wafer bonded silicon-on-silicon-carbide power devices PM Gammon, F Li, CW Chan, AM Sanchez, SA Hindmarsh, F Gity, ... Materials Science Forum 897, 747-750, 2017 | 7 | 2017 |
| Study of a novel lateral RESURF 3C-SiC on Si Schottky diode F Li, Y Sharma, M Jennings, H Rong, C Fisher, P Mawby 2014 16th European Conference on Power Electronics and Applications, 1-10, 2014 | 7 | 2014 |
| Thermal characterization of direct wafer bonded Si-on-SiC DE Field, JW Pomeroy, F Gity, M Schmidt, P Torchia, F Li, PM Gammon, ... Applied Physics Letters 120 (11), 2022 | 6 | 2022 |
| Optimization of 1700-V 4H-SiC Semi-Superjunction Schottky Rectifiers With Implanted P-Pillars for Practical Realization GWC Baker, PM Gammon, AB Renz, O Vavasour, CW Chan, Y Qi, T Dai, ... IEEE Transactions on Electron Devices 69 (4), 1924-1930, 2022 | 6 | 2022 |
