| Ga2O3 films for electronic and optoelectronic applications M Passlack, EF Schubert, WS Hobson, M Hong, N Moriya, SNG Chu, ... Journal of applied physics 77 (2), 686-693, 1995 | 520 | 1995 |
| Epitaxial cubic gadolinium oxide as a dielectric for gallium arsenide passivation M Hong, J Kwo, AR Kortan, JP Mannaerts, AM Sergent Science 283 (5409), 1897-1900, 1999 | 511 | 1999 |
| Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al2O3 ML Huang, YC Chang, CH Chang, YJ Lee, P Chang, J Kwo, TB Wu, ... Applied Physics Letters 87 (25), 2005 | 475 | 2005 |
| Observation of a magnetic antiphase domain structure with long-range order in a synthetic Gd-Y superlattice CF Majkrzak, JW Cable, J Kwo, M Hong, DB McWhan, Y Yafet, ... Physical review letters 56 (25), 2700, 1986 | 453 | 1986 |
| Cubic HfO {sub 2} doped with Y {sub 2} O {sub 3} epitaxial films on GaAs (001) of enhanced dielectric constant ZK Yang, WC Lee, YJ Lee, P Chang, ML Huang, M Hong, CH Hsu, J Kwo Applied Physics Letters 90 (15), 2007 | 432 | 2007 |
| GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition PD Ye, GD Wilk, B Yang, J Kwo, SNG Chu, S Nakahara, HJL Gossmann, ... Applied Physics Letters 83 (1), 180-182, 2003 | 407 | 2003 |
| Crystal structure of the 80 K superconductor YBa2Cu4O8 P Marsh, RM Fleming, ML Mandich, AM DeSantolo, J Kwo, M Hong, ... Nature 334 (6178), 141-143, 1988 | 401 | 1988 |
| Properties of high κ gate dielectrics and for Si J Kwo, M Hong, AR Kortan, KL Queeney, YJ Chabal, RL Opila Jr, ... Journal of Applied Physics 89 (7), 3920-3927, 2001 | 398 | 2001 |
| High ε gate dielectrics and for silicon J Kwo, M Hong, AR Kortan, KT Queeney, YJ Chabal, JP Mannaerts, ... Applied Physics Letters 77 (1), 130-132, 2000 | 392 | 2000 |
| Evidence for weak link and anisotropy limitations on the transport critical current in bulk polycrystalline Y1Ba2Cu3Ox JW Ekin, AI Braginski, AJ Panson, MA Janocko, DW Capone, NJ Zaluzec, ... Journal of applied physics 62 (12), 4821-4828, 1987 | 373 | 1987 |
| GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition PD Ye, GD Wilk, J Kwo, B Yang, HJL Gossmann, M Frei, SNG Chu, ... IEEE Electron Device Letters 24 (4), 209-211, 2003 | 336 | 2003 |
| Optical properties of gallium oxide thin films M Rebien, W Henrion, M Hong, JP Mannaerts, M Fleischer Applied physics letters 81 (2), 250-252, 2002 | 294 | 2002 |
| Quasistatic and high frequency capacitance–voltage characterization of Ga2O3–GaAs structures fabricated by in situ molecular beam epitaxy M Passlack, M Hong, JP Mannaerts Applied physics letters 68 (8), 1099-1101, 1996 | 294 | 1996 |
| Effect of temperature on metal–oxide–semiconductor field-effect transistors F Ren, M Hong, SNG Chu, MA Marcus, MJ Schurman, A Baca, SJ Pearton, ... Applied Physics Letters 73 (26), 3893-3895, 1998 | 282 | 1998 |
| Structural and superconducting properties of orientation-ordered Y 1 Ba 2 Cu 3 O 7− x films prepared by molecular-beam epitaxy J Kwo, TC Hsieh, RM Fleming, M Hong, SH Liou, BA Davidson, ... Physical Review B 36 (7), 4039, 1987 | 280 | 1987 |
| III–V compound semiconductor transistors—from planar to nanowire structures H Riel, LE Wernersson, M Hong, JA Del Alamo Mrs Bulletin 39 (8), 668-677, 2014 | 264 | 2014 |
| Magnetic and structural properties of single-crystal rare-earth Gd-Y superlattices J Kwo, EM Gyorgy, DB McWhan, M Hong, FJ DiSalvo, C Vettier, JE Bower Physical review letters 55 (13), 1402, 1985 | 244 | 1985 |
| Energy-band parameters of atomic-layer-deposition Al2O3∕ InGaAs heterostructure ML Huang, YC Chang, CH Chang, TD Lin, J Kwo, TB Wu, M Hong Applied physics letters 89 (1), 2006 | 240 | 2006 |
| Magnetic rare earth superlattices CF Majkrzak, J Kwo, M Hong, Y Yafet, D Gibbs, CL Chien, J Bohr Advances in Physics 40 (2), 99-189, 1991 | 236 | 1991 |
| Dielectric properties of electron‐beam deposited Ga2O3 films M Passlack, NEJ Hunt, EF Schubert, GJ Zydzik, M Hong, JP Mannaerts, ... Applied physics letters 64 (20), 2715-2717, 1994 | 229 | 1994 |
J. KwoNational Tsing Hua University, Department of physics; Bell Labs, Stanford University在 phys.nthu.edu.tw 的电子邮件经过验证
