| Impact of charge balance on static and dynamic characteristics of GaN super-heterojunction Schottky barrier diodes JT Kemmerling, R Guan, M Sadek, S Isukapati, W Sung, SW Han, R Chu IEEE Electron Device Letters 43 (5), 701-704, 2022 | 8 | 2022 |
| Implementing a student assessment scholars program: Students engaging in continuous improvement NP Truncale, ED Chalk, C Pellegrino, J Kemmerling Urbana, IL: University of Illinois and Indiana University, National …, 2018 | 7 | 2018 |
| GaN Super-Heterojunction FETs With 10-kV Blocking and 3-kV Dynamic Switching JT Kemmerling, R Guan, M Sadek, Y Xiong, J Song, SW Han, S Isukapati, ... IEEE Transactions on Electron Devices, 2024 | 4 | 2024 |
| 8.85-kV/0.72-A Charge-Balanced GaN Super-Heterojunction Schottky Barrier Diode SW Han, M Sadek, JT Kemmerling, R Guan, R Chu 2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM …, 2022 | 1 | 2022 |
| 2.3 kV GaN Super-Heterojunction FET for Cryogenic Power Switching M Sadek, JT Kemmerling, AK Visvkarma, R Guan, Y Xiong, J Song, ... 2024 Device Research Conference (DRC), 1-2, 2024 | | 2024 |
| Impact of P-GaN ohmic Contact Resistivity on Switching Time of GaN Super-Heterojunction FETs Y Du, J Kemmerling, J Song, K Shinohara, V Mehrotra, R Chu 2024 Device Research Conference (DRC), 1-2, 2024 | | 2024 |
| Monolithically Integrated GaN Photodetector and Bootstrapping Transimpedance Amplifier Y Xiong, R Guan, JT Kemmerling, Y Du, M Sadek, J Song, A Xie, R Chu IEEE Electron Device Letters, 2024 | | 2024 |
| Effects of Low-Mobility Holes in TCAD Simulated GaN/AlGaN/GaN Super-Heterojunction HEMT for RF and High-Power Applications J Kemmerling | | 2021 |
Rongming ChuThe Pennsylvania State University在 psu.edu 的电子邮件经过验证
