Control and elimination of nucleation-related defects in GaP/Si (001) heteroepitaxy TJ Grassman, MR Brenner, S Rajagopalan, R Unocic, R Dehoff, M Mills, ... Applied Physics Letters 94 (23), 2009 | 205 | 2009 |
III–V compound semiconductors: integration with silicon-based microelectronics T Li, M Mastro, A Dadgar CRC press, 2010 | 149 | 2010 |
Nucleation-related defect-free GaP/Si (100) heteroepitaxy via metal-organic chemical vapor deposition TJ Grassman, JA Carlin, B Galiana, LM Yang, F Yang, MJ Mills, SA Ringel Applied Physics Letters 102 (14), 2013 | 148 | 2013 |
Characterization of metamorphic GaAsP/Si materials and devices for photovoltaic applications TJ Grassman, MR Brenner, M Gonzalez, AM Carlin, RR Unocic, ... IEEE Transactions on Electron Devices 57 (12), 3361-3369, 2010 | 121 | 2010 |
GaAs0.75P0.25/Si Dual-Junction Solar Cells Grown by MBE and MOCVD TJ Grassman, DJ Chmielewski, SD Carnevale, JA Carlin, SA Ringel Photovoltaics, IEEE Journal of 6 (1), 326-331, 2016 | 116 | 2016 |
Metamorphic Epitaxy for Multijunction Solar Cells RM France, F Dimroth, TJ Grassman, RR King MRS Bulletin 41 (3), 202-209, 2016 | 80 | 2016 |
Rapid misfit dislocation characterization in heteroepitaxial III-V/Si thin films by electron channeling contrast imaging SD Carnevale, JI Deitz, JA Carlin, YN Picard, M De Graef, SA Ringel, ... Applied Physics Letters 104 (23), 2014 | 75 | 2014 |
Tunnel junction enhanced nanowire ultraviolet light emitting diodes ATM Sarwar, BJ May, JI Deitz, TJ Grassman, DW McComb, RC Myers Applied Physics Letters 107 (10), 2015 | 71 | 2015 |
MOCVD-Grown GaP/Si Subcells for Integrated III-V/Si Multijunction Photovoltaics TJ Grassman, JA Carlin, B Galiana, F Yang, MJ Mills, SA Ringel IEEE Journal of Photovoltaics 4 (3), 972-980, 2014 | 54 | 2014 |
In situ and ex situ investigations of KF postdeposition treatment effects on CIGS solar cells S Karki, PK Paul, G Rajan, T Ashrafee, K Aryal, P Pradhan, RW Collins, ... IEEE Journal of Photovoltaics 7 (2), 665-669, 2016 | 52 | 2016 |
Electronic properties of adsorbates on GaAs (001)-c (2× 8)∕(2× 4) DL Winn, MJ Hale, TJ Grassman, JZ Sexton, AC Kummel, M Passlack, ... The Journal of chemical physics 127 (13), 2007 | 52 | 2007 |
Applications of Electron Channeling Contrast Imaging for the Rapid Characterization of Extended Defects in III-V/Si Heterostructures SD Carnevale, JI Deitz, JA Carlin, YN Picard, DW McComb, MD Graef, ... IEEE Journal of Photovoltaics 5 (2), 676-682, 2015 | 48 | 2015 |
Direct and indirect causes of Fermi level pinning at the SiO∕ GaAs interface DL Winn, MJ Hale, TJ Grassman, AC Kummel, R Droopad, M Passlack The Journal of chemical physics 126 (8), 2007 | 48 | 2007 |
Epitaxially-Grown Metamorphic GaAsP/Si Dual-Junction Solar Cells TJ Grassman, JA Carlin, C Ratcliff, DJ Chmielewski, SA Ringel Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th, 0149-0153, 2013 | 42 | 2013 |
Silicon Wafer-Based Tandem Cells: The Ultimate Photovoltaic Solution? MA Green, X Hao, S Bremner, GJ Conibeer, IA Mansouri, N Song, Z Liu, ... 28th European Photovoltaic Solar Energy Conference, 7 - 10, 2013 | 42 | 2013 |
Anomalous hybridization in the In-rich InAs (0 0 1) reconstruction DL Feldwinn, JB Clemens, J Shen, SR Bishop, TJ Grassman, AC Kummel, ... Surface Science 603 (22), 3321-3328, 2009 | 41 | 2009 |
An atomic view of Fermi level pinning of Ge (100) by O2 TJ Grassman, SR Bishop, AC Kummel Surface science 602 (14), 2373-2381, 2008 | 41 | 2008 |
Direct nm-scale spatial mapping of traps in CIGS PK Paul, DW Cardwell, CM Jackson, K Galiano, K Aryal, JP Pelz, ... IEEE Journal of Photovoltaics 5 (5), 1482-1486, 2015 | 39 | 2015 |
Optically-aligned visible/near-infrared dual-band photodetector materials and devices on GaAs using metamorphic epitaxy K Swaminathan, TJ Grassman, LM Yang, Q Gu, MJ Mills, SA Ringel Journal of Applied Physics 110 (6), 2011 | 37 | 2011 |
Evolution of silicon bulk lifetime during III–V‐on‐Si multijunction solar cell epitaxial growth E García‐Tabarés, JA Carlin, TJ Grassman, D Martín, I Rey‐Stolle, ... Progress in Photovoltaics: Research and Applications 24 (5), 634–644, 2015 | 36 | 2015 |