Jørn M. Hvam 个人学术档案

引用次数

	总计	2019 年至今
引用	12788	1705
h 指数	63	23
i10 指数	209	43

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Wolfgang LangbeinSchool of Physics and Astronomy, Cardiff University在 cf.ac.uk 的电子邮件经过验证
Paola BorriProfessor at Cardiff University在 cf.ac.uk 的电子邮件经过验证
Minhao Pu (蒲敏皓)Senior Researcher/Associate Professor, DTU Electro, Technical Univ. of Denmark在 dtu.dk 的电子邮件经过验证
Kristján LeóssonDTE在 dte.ai 的电子邮件经过验证
L. K. OxenløweProfessor of Photonic Communication Technologies, Technical University of Denmark在 dtu.dk 的电子邮件经过验证
Dieter BimbergCIOMP of CAS, Changchun and TU Berlin在 physik.tu-berlin.de 的电子邮件经过验证
Ji HuaPost doc of optical communication, Technical University of Denmark在 fotonik.dtu.dk 的电子邮件经过验证
Michael GaliliDTU Fotonik, Technical University of Denmark在 fotonik.dtu.dk 的电子邮件经过验证
Hao HuTechnical University of Denmark在 fotonik.dtu.dk 的电子邮件经过验证
Peter LodahlProfessor of Physics, Niels Bohr Institute, University of Copenhagen在 nbi.ku.dk 的电子邮件经过验证
Søren StobbeProfessor, Department of Electrical and Photonics Engineering, Technical University of在 dtu.dk 的电子邮件经过验证
Haiyan OuAssociate Professor of Photinics Engineering, Technical University of Denmark在 fotonik.dtu.dk 的电子邮件经过验证
Toke Lund-HansenFoss Analytical A/S在 foss.dk 的电子邮件经过验证
Philip KristensenSenior researcher, DTU Fotonik, Technical University of Denmark在 fotonik.dtu.dk 的电子邮件经过验证
Manfred BayerExperimentelle Physik 2, Fakultät Physik, TU Dortmund在 tu-dortmund.de 的电子邮件经过验证
Jesper HanbergDTU Danchip在 danchip.dtu.dk 的电子邮件经过验证
Yunhong DingSenior Researcher/Associate Professor, Department of Electrical and Photonics Engineering, DTU在 dtu.dk 的电子邮件经过验证
Christophe PeucheretFOTON Institute, University of Rennes, CNRS - UMR 6082在 univ-rennes1.fr 的电子邮件经过验证
Faustino MartelliIstituto per la Microelettronica e i Microsistemi del Consiglio Nazionale delle Ricerche在 cnr.it 的电子邮件经过验证
Paulo V. SantosPaul-Drude-Institut für Festkörperelektronik在 pdi-berlin.de 的电子邮件经过验证

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Jørn M. Hvam

Technical University of Denmark, Department of Electronics and Photonics Engineering

在 fotonik.dtu.dk 的电子邮件经过验证

Nanophotonics Semiconductor Optoelectronics...


标题按引用次数排序按年份排序按标题排序	引用次数引用次数	年份
Waveguiding in surface plasmon polariton band gap structures SI Bozhevolnyi, J Erland, K Leosson, PMW Skovgaard, JM Hvam Physical review letters 86 (14), 3008, 2001	619	2001
Subpicosecond time-resolved Raman spectroscopy of LO phonons in GaAs JA Kash, JC Tsang, JM Hvam Physical review letters 54 (19), 2151, 1985	508	1985
Long lived coherence in self-assembled quantum dots D Birkedal, K Leosson, JM Hvam Physical review letters 87 (22), 227401, 2001	296	2001
Ultra-low-loss inverted taper coupler for silicon-on-insulator ridge waveguide M Pu, L Liu, H Ou, K Yvind, JM Hvam Optics Communications 283 (19), 3678-3682, 2010	294	2010
Ultrafast gain dynamics in InAs-InGaAs quantum-dot amplifiers P Borri, W Langbein, JM Hvam, F Heinrichsdorff, MH Mao, D Bimberg IEEE Photonics Technology Letters 12 (6), 594-596, 2000	220	2000
Binding of quasi-two-dimensional biexcitons D Birkedal, J Singh, VG Lyssenko, J Erland, JM Hvam Physical review letters 76 (4), 672, 1996	217	1996
Spectral hole-burning and carrier-heating dynamics in InGaAs quantum-dot amplifiers P Borri, W Langbein, JM Hvam, F Heinrichsdorff, MH Mao, D Bimberg IEEE Journal of selected topics in Quantum electronics 6 (3), 544-551, 2000	206	2000
Dispersion of the second-order nonlinear susceptibility in ZnTe, ZnSe, and ZnS HP Wagner, M Kühnelt, W Langbein, JM Hvam Physical Review B 58 (16), 10494, 1998	197	1998
Silicon-on-insulator polarization splitting and rotating device for polarization diversity circuits L Liu, Y Ding, K Yvind, JM Hvam Optics express 19 (13), 12646-12651, 2011	196	2011
Dephasing in InAs/GaAs quantum dots P Borri, W Langbein, J Mørk, JM Hvam, F Heinrichsdorff, MH Mao, ... Physical Review B 60 (11), 7784, 1999	180	1999
Dispersive transport and recombination lifetime in phosphorus-doped hydrogenated amorphous silicon JM Hvam, MH Brodsky Physical Review Letters 46 (5), 371, 1981	178	1981
Time-resolved speckle analysis: A new approach to coherence and dephasing of optical excitations in solids W Langbein, JM Hvam, R Zimmermann Physical review letters 82 (5), 1040, 1999	153	1999
Size dependence of the wavefunction of self-assembled InAs quantum dots from time-resolved optical measurements J Johansen, S Stobbe, IS Nikolaev, T Lund-Hansen, PT Kristensen, ... Physical Review B—Condensed Matter and Materials Physics 77 (7), 073303, 2008	151	2008
Excitons, biexcitons, and phonons in ultrathin CdSe/ZnSe quantum structures F Gindele, U Woggon, W Langbein, JM Hvam, K Leonardi, D Hommel, ... Physical Review B 60 (12), 8773, 1999	151	1999
Coherent generation and interference of excitons and biexcitons in GaAs/Al x Ga 1− x As quantum wells KH Pantke, D Oberhauser, VG Lyssenko, JM Hvam, G Weimann Physical Review B 47 (4), 2413, 1993	151	1993
Higher-order photon bunching in a semiconductor microcavity M Aßmann, F Veit, M Bayer, M van der Poel, JM Hvam Science 325 (5938), 297-300, 2009	148	2009
Direct observation of free-exciton thermalization in quantum-well structures M Umlauff, J Hoffmann, H Kalt, W Langbein, JM Hvam, M Scholl, J Söllner, ... Physical Review B 57 (3), 1390, 1998	145	1998
High-efficiency, large-bandwidth silicon-on-insulator grating coupler based on a fully-etched photonic crystal structure L Liu, M Pu, K Yvind, JM Hvam Applied physics letters 96 (5), 2010	136	2010
Binding energy of two-dimensional biexcitons J Singh, D Birkedal, VG Lyssenko, JM Hvam Physical Review B 53 (23), 15909, 1996	134	1996
Efficient and compact TE–TM polarization converter built on silicon-on-insulator platform with a simple fabrication process L Liu, Y Ding, K Yvind, JM Hvam Optics letters 36 (7), 1059-1061, 2011	129	2011

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