| Ubiquitous relaxation in BTI stressing—New evaluation and insights B Kaczer, T Grasser, J Roussel, J Martin-Martinez, R O'Connor, ... 2008 IEEE International Reliability Physics Symposium, 20-27, 2008 | 306 | 2008 |
| Nanocrystalline TiO2 films studied by optical, XRD and FTIR spectroscopy JY Zhang, IW Boyd, BJ O'sullivan, PK Hurley, PV Kelly, JP Senateur Journal of Non-Crystalline Solids 303 (1), 134-138, 2002 | 229 | 2002 |
| Comphy—A compact-physics framework for unified modeling of BTI G Rzepa, J Franco, B O’Sullivan, A Subirats, M Simicic, G Hellings, ... Microelectronics Reliability 85, 49-65, 2018 | 177 | 2018 |
| interface properties following rapid thermal processing BJ O’sullivan, PK Hurley, C Leveugle, JH Das Journal of Applied Physics 89 (7), 3811-3820, 2001 | 99 | 2001 |
| Crystalline thin‐foil silicon solar cells: where crystalline quality meets thin‐film processing F Dross, K Baert, T Bearda, J Deckers, V Depauw, O El Daif, I Gordon, ... Progress in Photovoltaics: Research and Applications 20 (6), 770-784, 2012 | 97 | 2012 |
| Estimation of fixed charge densities in hafnium-silicate gate dielectrics VS Kaushik, BJ O'Sullivan, G Pourtois, N Van Hoornick, A Delabie, ... IEEE Transactions on Electron Devices 53 (10), 2627-2633, 2006 | 89 | 2006 |
| Investigation of TiO2-doped HfO2 thin films deposited by photo-CVD Q Fang, JY Zhang, ZM Wang, JX Wu, BJ O'Sullivan, PK Hurley, ... Thin Solid Films 428 (1-2), 263-268, 2003 | 77 | 2003 |
| Interface of ultrathin HfO2 films deposited by UV-photo-CVD Q Fang, JY Zhang, Z Wang, M Modreanu, BJ O'sullivan, PK Hurley, ... Thin Solid Films 453, 203-207, 2004 | 72 | 2004 |
| Pulsed liquid-injection MOCVD of high-K oxides for advanced semiconductor technologies C Dubourdieu, H Roussel, C Jiménez, M Audier, JP Sénateur, S Lhostis, ... Materials Science and Engineering: B 118 (1-3), 105-111, 2005 | 49 | 2005 |
| Characterisation of HfO2 deposited by photo-induced chemical vapour deposition Q Fang, JY Zhang, ZM Wang, JX Wu, BJ O'Sullivan, PK Hurley, ... Thin Solid Films 427 (1-2), 391-396, 2003 | 47 | 2003 |
| Examination of the Si (111) SiO2, Si (110) SiO2, and Si (100) SiO2 interfacial properties following rapid thermal annealing PK Hurley, BJ O’Sullivan, FN Cubaynes, PA Stolk, FP Widdershoven, ... Journal of the Electrochemical Society 149 (3), G194, 2002 | 44 | 2002 |
| Passivation of a metal contact with a tunneling layer X Loozen, JB Larsen, F Dross, M Aleman, T Bearda, BJ O'sullivan, ... Energy Procedia 21, 75-83, 2012 | 43 | 2012 |
| Impact of Charge trapping on Imprint and its Recovery in HfO2 based FeFET Y Higashi, N Ronchi, B Kaczer, K Banerjee, SRC McMitchell, ... 2019 IEEE International Electron Devices Meeting (IEDM), 15.6. 1-15.6. 4, 2019 | 35 | 2019 |
| Analysis of centers at the interface following rapid thermal annealing PK Hurley, A Stesmans, VV Afanas’ ev, BJ O’sullivan, E O’Callaghan Journal of Applied Physics 93 (7), 3971-3973, 2003 | 35 | 2003 |
| Interface States and P b Defects at the Si (100)/HfO2 Interface PK Hurley, BJ O’Sullivan, VV Afanas’ev, A Stesmans Electrochemical and solid-state letters 8 (2), G44, 2004 | 34 | 2004 |
| Effective work function modulation by controlled dielectric monolayer deposition L Pantisano, T Schram, B O’Sullivan, T Conard, S De Gendt, ... Applied physics letters 89 (11), 2006 | 33 | 2006 |
| Low VT CMOS using doped Hf-based oxides, TaC-based Metals and Laser-only Anneal S Kubicek, T Schram, V Paraschiv, R Vos, M Demand, C Adelmann, ... 2007 IEEE International Electron Devices Meeting, 49-52, 2007 | 31 | 2007 |
| Solving the BEOL compatibility challenge of top-pinned magnetic tunnel junction stacks J Swerts, E Liu, S Couet, S Mertens, S Rao, W Kim, K Garello, L Souriau, ... 2017 IEEE International Electron Devices Meeting (IEDM), 38.6. 1-38.6. 4, 2017 | 30 | 2017 |
| Defect profiling in FEFET Si: HfO2 layers BJ O'sullivan, V Putcha, R Izmailov, V Afanas' ev, E Simoen, T Jung, ... Applied Physics Letters 117 (20), 2020 | 28 | 2020 |
| Electrical evaluation of defects at the Si (100)/HfO2 interface BJ O’Sullivan, PK Hurley, E O’Connor, M Modreanu, H Roussel, ... Journal of the Electrochemical Society 151 (8), G493, 2004 | 26 | 2004 |
