Physical Mechanisms behind the Field‐Cycling Behavior of HfO2‐Based Ferroelectric Capacitors M Pešić, FPG Fengler, L Larcher, A Padovani, T Schenk, ED Grimley, ... Advanced Functional Materials 26 (25), 4601-4612, 2016 | 746 | 2016 |
Unveiling the double-well energy landscape in a ferroelectric layer M Hoffmann, FPG Fengler, M Herzig, T Mittmann, B Max, U Schroeder, ... Nature 565 (7740), 464-467, 2019 | 375 | 2019 |
Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: A comparison of model and experiment MH Park, YH Lee, HJ Kim, T Schenk, W Lee, K Do Kim, FPG Fengler, ... Nanoscale 9 (28), 9973-9986, 2017 | 320 | 2017 |
Lanthanum-doped hafnium oxide: a robust ferroelectric material U Schroeder, C Richter, MH Park, T Schenk, M Pesic, M Hoffmann, ... Inorganic chemistry 57 (5), 2752-2765, 2018 | 304 | 2018 |
Effect of Zr Content on the Wake-Up Effect in Hf1–xZrxO2 Films MH Park, HJ Kim, YJ Kim, YH Lee, T Moon, KD Kim, SD Hyun, F Fengler, ... ACS applied materials & interfaces 8 (24), 15466-15475, 2016 | 203 | 2016 |
Domain pinning: Comparison of hafnia and PZT based ferroelectrics FPG Fengler, M Pešić, S Starschich, T Schneller, C Künneth, U Böttger, ... Advanced Electronic Materials 3 (4), 1600505, 2017 | 128 | 2017 |
Optimizing process conditions for improved Hf1− xZrxO2 ferroelectric capacitor performance T Mittmann, FPG Fengler, C Richter, MH Park, T Mikolajick, U Schroeder Microelectronic Engineering 178, 48-51, 2017 | 103 | 2017 |
On the relationship between field cycling and imprint in ferroelectric Hf0. 5Zr0. 5O2 FPG Fengler, M Hoffmann, S Slesazeck, T Mikolajick, U Schroeder Journal of Applied Physics 123 (20), 2018 | 97 | 2018 |
Analysis of performance instabilities of hafnia‐based ferroelectrics using modulus spectroscopy and thermally stimulated depolarization currents FPG Fengler, R Nigon, P Muralt, ED Grimley, X Sang, V Sessi, ... Advanced Electronic Materials 4 (3), 1700547, 2018 | 70 | 2018 |
Negative capacitance for electrostatic supercapacitors M Hoffmann, FPG Fengler, B Max, U Schroeder, S Slesazeck, T Mikolajick Advanced Energy Materials 9 (40), 1901154, 2019 | 63 | 2019 |
Root cause of degradation in novel HfO2-based ferroelectric memories M Pesic, FPG Fengler, S Slesazeck, U Schroeder, T Mikolajick, L Larcher, ... 2016 IEEE International Reliability Physics Symposium (IRPS), MY-3-1-MY-3-5, 2016 | 47 | 2016 |
A silicon nanowire ferroelectric field‐effect transistor V Sessi, M Simon, H Mulaosmanovic, D Pohl, M Loeffler, T Mauersberger, ... Advanced Electronic Materials 6 (4), 1901244, 2020 | 35 | 2020 |
Comparison of hafnia and PZT based ferroelectrics for future non-volatile FRAM applications FPG Fengler, M Pešić, S Starschich, T Schneller, U Böttger, T Schenk, ... 2016 46th European Solid-State Device Research Conference (ESSDERC), 369-372, 2016 | 33 | 2016 |
Field cycling behavior of ferroelectric HfO2-based capacitors F Fengler, MH Park, T Schenk, M Pešić, U Schroeder Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices …, 2019 | 9 | 2019 |
Comparative study of ITO and TiN fabricated by low-temperature RF biased sputtering DK Simon, D Tröger, T Schenk, I Dirnstorfer, FPG Fengler, PM Jordan, ... Journal of Vacuum Science & Technology A 34 (2), 2016 | 8 | 2016 |
Low‐thermal budget flash light annealing for Al2O3 surface passivation DK Simon, T Henke, PM Jordan, FPG Fengler, T Mikolajick, JW Bartha, ... physica status solidi (RRL)–Rapid Research Letters 9 (11), 631-635, 2015 | 5 | 2015 |
2D mapping of chemical and field effect passivation of Al2O3 on silicon substrates PM Jordan, DK Simon, FPG Fengler, T Mikolajick, I Dirnstorfer Energy Procedia 77, 91-98, 2015 | 5 | 2015 |
10 Years Fluorite-type Ferroelectrics–A Survey T Schenk, M Pešić, MH Park, M Hoffmann, H Mulaosmanovic, C Richter, ... | 2 | 2017 |
Investigation of local and integral polarization switching behavior of ultrathin HfObased films P Buragohain, O Bak, A Chernikova, A Zenkevich, U Schroeder, ... Bulletin of the American Physical Society 62, 2017 | 2 | 2017 |
Analysis of the Field Cycling Behavior of Ferroelectric Capacitor Structures Based on Hafnia Zirconia Films FPG Fengler Technische Universität Dresden, 2019 | 1 | 2019 |