| Near‐Infrared Photodetectors Based on MoTe2/Graphene Heterostructure with High Responsivity and Flexibility W Yu, S Li, Y Zhang, W Ma, T Sun, J Yuan, K Fu, Q Bao Small 13 (24), 1700268, 2017 | 265 | 2017 |
| Integration of LPCVD-SiNxgate dielectric with recessed-gate E-mode GaN MIS-FETs: Toward high performance, high stability and long TDDB lifetime M Hua, Z Zhang, J Wei, J Lei, G Tang, K Fu, Y Cai, B Zhang, KJ Chen 2016 IEEE International Electron Devices Meeting (IEDM), 10.4. 1-10.4. 4, 2016 | 124 | 2016 |
| Characterization of Leakage and Reliability of SiNx Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs M Hua, C Liu, S Yang, S Liu, K Fu, Z Dong, Y Cai, B Zhang, KJ Chen IEEE Transactions on Electron Devices 62 (10), 3215-3222, 2015 | 119 | 2015 |
| Studies on High-Voltage GaN-on-Si MIS-HEMTs Using LPCVD Si3N4as Gate Dielectric and Passivation Layer Z Zhang, G Yu, X Zhang, X Deng, S Li, Y Fan, S Sun, L Song, S Tan, D Wu, ... IEEE Transactions on Electron Devices 63 (2), 731-738, 2016 | 113 | 2016 |
| Gallium nitride Schottky betavoltaic nuclear batteries M Lu, G Zhang, K Fu, G Yu, D Su, J Hu Energy Conversion and Management 52 (4), 1955-1958, 2011 | 108 | 2011 |
| Breakdown enhancement and current collapse suppression by high-resistivity GaN cap layer in normally-off AlGaN/GaN HEMTs R Hao, W Li, K Fu, G Yu, L Song, J Yuan, J Li, X Deng, X Zhang, Q Zhou, ... IEEE Electron Device Letters 38 (11), 1567-1570, 2017 | 103 | 2017 |
| GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor Deposition SiNxas Gate Dielectric M Hua, C Liu, S Yang, S Liu, K Fu, Z Dong, Y Cai, B Zhang, KJ Chen IEEE Electron Device Letters 36 (5), 448-450, 2015 | 102 | 2015 |
| Normally-off p-GaN/AlGaN/GaN high electron mobility transistors using hydrogen plasma treatment R Hao, K Fu, G Yu, W Li, J Yuan, L Song, Z Zhang, S Sun, X Li, Y Cai, ... Applied Physics Letters 109 (15), 2016 | 93 | 2016 |
| Flexible Broadband Graphene Photodetectors Enhanced by Plasmonic Cu3−xP Colloidal Nanocrystals T Sun, Y Wang, W Yu, Y Wang, Z Dai, Z Liu, BN Shivananju, Y Zhang, ... Small 13 (42), 1701881, 2017 | 78 | 2017 |
| Solar-blind ultraviolet photodetector based on graphene/vertical Ga2O3 nanowire array heterojunction T He, Y Zhao, X Zhang, W Lin, K Fu, C Sun, F Shi, X Ding, G Yu, K Zhang, ... Nanophotonics 7 (9), 1557-1562, 2018 | 70 | 2018 |
| High performance vertical GaN-on-GaN pn power diodes with hydrogen-plasma-based edge termination H Fu, K Fu, X Huang, H Chen, I Baranowski, TH Yang, J Montes, Y Zhao IEEE Electron Device Letters 39 (7), 1018-1021, 2018 | 66 | 2018 |
| High voltage vertical GaN pn diodes with hydrogen-plasma based guard rings H Fu, K Fu, SR Alugubelli, CY Cheng, X Huang, H Chen, TH Yang, ... IEEE Electron Device Letters 41 (1), 127-130, 2019 | 65 | 2019 |
| Demonstration of mechanically exfoliated β-Ga2O3/GaN pn heterojunction J Montes, C Yang, H Fu, TH Yang, K Fu, H Chen, J Zhou, X Huang, ... Applied Physics Letters 114 (16), 2019 | 65 | 2019 |
| Investigation of GaN-on-GaN vertical pn diode with regrown p-GaN by metalorganic chemical vapor deposition K Fu, H Fu, H Liu, SR Alugubelli, TH Yang, X Huang, H Chen, ... Applied physics letters 113 (23), 2018 | 65 | 2018 |
| Reverse leakage analysis for as-grown and regrown vertical GaN-on-GaN Schottky barrier diodes K Fu, H Fu, X Huang, TH Yang, CY Cheng, PR Peri, H Chen, J Montes, ... IEEE Journal of the Electron Devices Society 8, 74-83, 2020 | 60 | 2020 |
| Demonstration of 1.27 kV Etch-Then-Regrow GaN - Junctions With Low Leakage for GaN Power Electronics K Fu, H Fu, X Huang, H Chen, TH Yang, J Montes, C Yang, J Zhou, ... IEEE Electron Device Letters 40 (11), 1728-1731, 2019 | 60 | 2019 |
| AlGaN/GaN MIS-HEMTs of Very-Low Hysteresis and Current Collapse With In-Situ Pre-Deposition Plasma Nitridation and LPCVD-Si3N4 Gate Insulator Z Zhang, W Li, K Fu, G Yu, X Zhang, Y Zhao, S Sun, L Song, X Deng, ... IEEE Electron Device Letters 38 (2), 236-239, 2016 | 57 | 2016 |
| Vertical GaN power devices: Device principles and fabrication technologies—Part I H Fu, K Fu, S Chowdhury, T Palacios, Y Zhao IEEE Transactions on Electron Devices 68 (7), 3200-3211, 2021 | 54 | 2021 |
| Temperature-dependent electrical properties of β-Ga2O3 Schottky barrier diodes on highly doped single-crystal substrates TH Yang, H Fu, H Chen, X Huang, J Montes, I Baranowski, K Fu, Y Zhao Journal of Semiconductors 40 (1), 012801, 2019 | 50 | 2019 |
| Vertical GaN power devices: Device principles and fabrication technologies—Part II H Fu, K Fu, S Chowdhury, T Palacios, Y Zhao IEEE Transactions on Electron Devices 68 (7), 3212-3222, 2021 | 48 | 2021 |
Yuji ZhaoProfessor, Electrical and Computer Engineering, Rice University在 rice.edu 的电子邮件经过验证
