A steep-slope transistor based on abrupt electronic phase transition N Shukla, AV Thathachary, A Agrawal, H Paik, A Aziz, DG Schlom, ... Nature communications 6 (1), 7812, 2015 | 384 | 2015 |
14nm ferroelectric FinFET technology with steep subthreshold slope for ultra low power applications Z Krivokapic, U Rana, R Galatage, A Razavieh, A Aziz, J Liu, J Shi, ... 2017 IEEE International Electron Devices Meeting (IEDM), 15.1. 1-15.1. 4, 2017 | 265 | 2017 |
Physics-based circuit-compatible SPICE model for ferroelectric transistors A Aziz, S Ghosh, S Datta, SK Gupta IEEE Electron Device Letters 37 (6), 805-808, 2016 | 188 | 2016 |
Nonvolatile memory design based on ferroelectric FETs S George, K Ma, A Aziz, X Li, A Khan, S Salahuddin, MF Chang, S Datta, ... Proceedings of the 53rd Annual Design Automation Conference, 1-6, 2016 | 130 | 2016 |
Device-circuit analysis of ferroelectric FETs for low-power logic S Gupta, M Steiner, A Aziz, V Narayanan, S Datta, SK Gupta IEEE Transactions on Electron Devices 64 (8), 3092-3100, 2017 | 112 | 2017 |
Enabling energy-efficient nonvolatile computing with negative capacitance FET X Li, J Sampson, A Khan, K Ma, S George, A Aziz, SK Gupta, ... IEEE Transactions on Electron Devices 64 (8), 3452-3458, 2017 | 90 | 2017 |
Computing with ferroelectric FETs: Devices, models, systems, and applications A Aziz, ET Breyer, A Chen, X Chen, S Datta, SK Gupta, M Hoffmann, ... 2018 Design, Automation & Test in Europe Conference & Exhibition (DATE …, 2018 | 87 | 2018 |
Impact of total and partial dipole switching on the switching slope of gate-last negative capacitance FETs with ferroelectric hafnium zirconium oxide gate stack P Sharma, K Tapily, AK Saha, J Zhang, A Shaughnessy, A Aziz, ... VLSI Technology, 2017 Symposium on, 2017 | 87 | 2017 |
Exploiting ferroelectric FETs for low-power non-volatile logic-in-memory circuits X Yin, A Aziz, J Nahas, S Datta, S Gupta, M Niemier, XS Hu 2016 IEEE/ACM International Conference on Computer-Aided Design (ICCAD), 1-8, 2016 | 82 | 2016 |
Advancing nonvolatile computing with nonvolatile NCFET latches and flip-flops X Li, S George, K Ma, WY Tsai, A Aziz, J Sampson, SK Gupta, MF Chang, ... IEEE Transactions on Circuits and Systems I: Regular Papers 64 (11), 2907-2919, 2017 | 66 | 2017 |
Ag/HfO2based threshold switch with extreme non-linearity for unipolar cross-point memory and steep-slope phase-FETs N Shukla, B Grisafe, RK Ghosh, N Jao, A Aziz, J Frougier, M Jerry, ... 2016 IEEE International Electron Devices Meeting (IEDM), 34.6. 1-34.6. 4, 2016 | 65 | 2016 |
Phase-transition-FET exhibiting steep switching slope of 8mV/decade and 36% enhanced ON current J Frougier, N Shukla, D Deng, M Jerry, A Aziz, L Liu, G Lavallee, ... 2016 IEEE Symposium on VLSI Technology, 1-2, 2016 | 56 | 2016 |
Steep Switching Hybrid Phase Transition FETs (Hyper-FET) for Low Power Applications: A Device-Circuit Co-design Perspective—Part II A Aziz, N Shukla, S Datta, SK Gupta IEEE Transactions on Electron Devices 64 (3), 1358 - 1365, 2017 | 54 | 2017 |
Steep Switching Hybrid Phase Transition FETs (Hyper-FET) for Low Power Applications: A Device-Circuit Co-design Perspective–Part I A Aziz, N Shukla, S Datta, SK Gupta IEEE Transactions on Electron Devices 64 (3), 1350-1357, 2017 | 54 | 2017 |
Device circuit co design of FEFET based logic for low voltage processors S George, A Aziz, X Li, MS Kim, S Datta, J Sampson, S Gupta, ... 2016 IEEE Computer Society Annual Symposium on VLSI (ISVLSI), 649-654, 2016 | 48 | 2016 |
Cryogenic memory technologies S Alam, MS Hossain, SR Srinivasa, A Aziz Nature Electronics 6 (3), 185-198, 2023 | 46 | 2023 |
Ferroelectric transistor based non-volatile flip-flop D Wang, S George, A Aziz, S Datta, V Narayanan, SK Gupta Proceedings of the 2016 international symposium on low power electronics and …, 2016 | 42 | 2016 |
Beyond-CMOS technologies for next generation computer design RO Topaloglu, HSP Wong Springer, 2019 | 27 | 2019 |
Analysis of functional oxide based selectors for cross-point memories A Aziz, N Jao, S Datta, SK Gupta IEEE Transactions on Circuits and Systems I: Regular Papers 63 (12), 2222-2235, 2016 | 26 | 2016 |
A non-volatile cryogenic random-access memory based on the quantum anomalous Hall effect S Alam, MS Hossain, A Aziz Scientific Reports 11 (1), 7892, 2021 | 25 | 2021 |