| The effect of general strain on the band structure and electron mobility of silicon E Ungersboeck, S Dhar, G Karlowatz, V Sverdlov, H Kosina, S Selberherr IEEE Transactions on Electron Devices 54 (9), 2183-2190, 2007 | 239 | 2007 |
| The universality of NBTI relaxation and its implications for modeling and characterization T Grasser, W Gos, V Sverdlov, B Kaczer 2007 IEEE International Reliability Physics Symposium Proceedings. 45th …, 2007 | 207 | 2007 |
| Nanoscale silicon MOSFETs: A theoretical study VA Sverdlov, TJ Walls, KK Likharev IEEE Transactions on Electron Devices 50 (9), 1926-1933, 2003 | 126 | 2003 |
| CMOS-compatible spintronic devices: a review A Makarov, T Windbacher, V Sverdlov, S Selberherr Semiconductor Science and Technology 31 (11), 113006, 2016 | 122 | 2016 |
| Strain-induced effects in advanced MOSFETs V Sverdlov Springer Science & Business media, 2011 | 121 | 2011 |
| Emerging memory technologies: Trends, challenges, and modeling methods A Makarov, V Sverdlov, S Selberherr Microelectronics Reliability 52 (4), 628-634, 2012 | 118 | 2012 |
| Implication logic gates using spin-transfer-torque-operated magnetic tunnel junctions for intrinsic logic-in-memory H Mahmoudi, T Windbacher, V Sverdlov, S Selberherr Solid-State Electronics 84, 191-197, 2013 | 91 | 2013 |
| Silicon spintronics: Progress and challenges V Sverdlov, S Selberherr Physics Reports 585, 1-40, 2015 | 81 | 2015 |
| Many-body wave function for a quantum dot in a weak magnetic field A Harju, VA Sverdlov, RM Nieminen, V Halonen Physical Review B 59 (8), 5622, 1999 | 78 | 1999 |
| Current transport models for nanoscale semiconductor devices V Sverdlov, E Ungersboeck, H Kosina, S Selberherr Materials Science and Engineering: R: Reports 58 (6), 228-270, 2008 | 68 | 2008 |
| Coulomb gap, Coulomb blockade, and dynamic activation energy in frustrated single-electron arrays DM Kaplan, VA Sverdlov, KK Likharev Physical Review B 68 (4), 045321, 2003 | 54 | 2003 |
| Two-band k· p model for the conduction band in silicon: Impact of strain and confinement on band structure and mobility V Sverdlov, G Karlowatz, S Dhar, H Kosina, S Selberherr Solid-State Electronics 52 (10), 1563-1568, 2008 | 38 | 2008 |
| Qubit decoherence by Gaussian low-frequency noise K Rabenstein, VA Sverdlov, DV Averin Journal of Experimental and Theoretical Physics Letters 79 (12), 646-649, 2004 | 38 | 2004 |
| Reduction of switching time in pentalayer magnetic tunnel junctions with a composite‐free layer A Makarov, V Sverdlov, D Osintsev, S Selberherr physica status solidi (RRL)–Rapid Research Letters 5 (12), 420-422, 2011 | 37 | 2011 |
| Shot-noise suppression at two-dimensional hopping VA Sverdlov, AN Korotkov, KK Likharev Physical Review B 63 (8), 081302, 2001 | 37 | 2001 |
| Ultra-scaled Z-RAM cell S Okhonin, M Nagoga, CW Lee, JP Colinge, A Afzalian, R Yan, ... 2008 IEEE International SOI Conference, 157-158, 2008 | 36 | 2008 |
| Quantum transport in ultra-scaled double-gate MOSFETs: A Wigner function-based Monte Carlo approach V Sverdlov, A Gehring, H Kosina, S Selberherr Solid-State Electronics 49 (9), 1510-1515, 2005 | 36 | 2005 |
| Reliability analysis and comparison of implication and reprogrammable logic gates in magnetic tunnel junction logic circuits H Mahmoudi, T Windbacher, V Sverdlov, S Selberherr IEEE Transactions on Magnetics 49 (12), 5620-5628, 2013 | 35 | 2013 |
| MOSFETs below 10nm: quantum theory TJ Walls, VA Sverdlov, KK Likharev Physica E: Low-dimensional Systems and Nanostructures 19 (1-2), 23-27, 2003 | 34 | 2003 |
| Variational wave function for a two-electron quantum dot A Harju, VA Sverdlov, B Barbiellini, RM Nieminen Physica B: Condensed Matter 255 (1-4), 145-149, 1998 | 34 | 1998 |
Siegfried SelberherrInstitute for Microelectronics, TU Wien在 TUWien.ac.at 的电子邮件经过验证
