| Reliability assessment of AlGaN/GaN HEMTs on the SiC substrate under the RF stress N Moultif, O Latry, E Joubert, M Ndiaye, C Moreau, JF Goupy, P Carton IEEE Transactions on Power Electronics 36 (7), 7442-7450, 2020 | 23 | 2020 |
| S-band pulsed-RF operating life test on AlGaN/GaN HEMT devices for radar application N Moultif, O Latry, M Ndiaye, T Neveu, E Joubert, C Moreau, JF Goupy Microelectronics Reliability 100, 113434, 2019 | 15 | 2019 |
| Characterization of HTRB stress effects on SiC MOSFETs using photon emission spectral signatures N Moultif, E Joubert, M Masmoudi, O Latry Microelectronics Reliability 76, 243-248, 2017 | 13 | 2017 |
| Reliability study of high-power mechatronic components by spectral photoemission microscopy N Moultif, A Divay, E Joubert, O Latry Reliability of High-Power Mechatronic Systems 2, 241-271, 2017 | 7 | 2017 |
| Failure analysis of atmospheric neutron-induced single event burnout of a commercial SiC MOSFET RC Germanicus, K Niskanen, A Michez, N Moultif, W Jouha, O Latry, ... Materials Science Forum 1062, 544-548, 2022 | 6 | 2022 |
| Dopant activity for highly in-situ doped polycrystalline silicon: hall, XRD, scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM) RC Germanicus, F Lallemand, D Chateigner, W Jouha, N Moultif, O Latry, ... Nano Express 2 (1), 010037, 2021 | 6 | 2021 |
| Thermal Analysis of AlGaN/GaN High-Electron Mobility Transistors Using I–V Pulsed Characterizations and Infra Red Microscopy N Moultif, A Echeverri, D Carisetti, O Latry, E Joubert IEEE Transactions on Device and Materials Reliability 19 (4), 704-710, 2019 | 6 | 2019 |
| Localizing and analyzing defects in AlGaN/GaN HEMT using photon emission spectral signatures N Moultif, A Divay, E Joubert, O Latry Engineering Failure Analysis 81, 69-78, 2017 | 6 | 2017 |
| Characterization of ESD stress effects on SiC MOSFETs using photon emission spectral signatures N Moultif, E Joubert, M Masmoudi, O Latry 2017 Annual Reliability and Maintainability Symposium (RAMS), 1-7, 2017 | 6 | 2017 |
| A time to failure evaluation of AlGaN/GaN HEMT transistors for RF applications O Latry, N Moultif, E Joubert, M Ndiaye e-Prime-Advances in Electrical Engineering, Electronics and Energy 2, 100062, 2022 | 5 | 2022 |
| Temperature estimation of high-electron mobility transistors AlGaN/GaN O Latry, E Joubert, T Neveu, N Moultif, M Ndiaye 2018 19th IEEE Mediterranean Electrotechnical Conference (MELECON), 265-268, 2018 | 5 | 2018 |
| Reliability study of mechatronic power components using spectral photon emission microscopy N Moultif, E Joubert, O Latry Advanced Electromagnetics 5 (3), 20-24, 2016 | 4 | 2016 |
| Parametric nano-electrical analysis for SiC junctions of a packaged device RC Germanicus, W Jouha, N Moultif, P De Wolf, VA Shah, PM Gammon, ... 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe …, 2022 | 3 | 2022 |
| SiC MOSFET robustness to ESD study: Correlation between electrical and spectral photo-emission characterizations N Moultif, E Joubert, O Latry 2018 19th IEEE Mediterranean Electrotechnical Conference (MELECON), 260-264, 2018 | 3 | 2018 |
| Reliability and Qualification Tests for High-Power MOSFET Transistors N Moultif, M Masmoudi, E Joubert, O Latry Reliability of High-Power Mechatronic Systems 2, 155-197, 2017 | 2 | 2017 |
| Reliability and failure analysis in power GaN-HEMTs during S-band pulsed-RF operating N Moultif, S Duguay, O Latry, M Ndiaye, E Joubert Microelectronics Reliability 126, 114295, 2021 | 1 | 2021 |
| Analyse de défaillance dans les transistors de puissance grand gap par électroluminescence spectrale N Moultif Normandie Université, 2017 | 1 | 2017 |
| Failure analysis in wide band Gap power transistors by spectral electroluminescence N Moultif < bound method Organization. get_name_with_acronym of< Organization: TEL …, 2017 | | 2017 |
| Analyse par électroluminescence des dégradations des transistors MOSFET-SiC TA Nguyen, A ECHEVERRI, S MBAREK, N Moultif, P Dherbécourt, ... Symposium de Génie Electrique 2016-SGE2016, 2016 | | 2016 |
