| Largely reduced cross-plane thermal conductivity of nanoporous In0.1Ga0.9N thin films directly grown by metal organic chemical vapor deposition D Xu, Q Wang, X Wu, J Zhu, H Zhao, B Xiao, X Wang, X Wang, Q Hao Frontiers in Energy 12, 127-136, 2018 | 24 | 2018 |
| Hybrid electrothermal simulation of a 3-D fin-shaped field-effect transistor based on GaN nanowires Q Hao, H Zhao, Y Xiao, Q Wang, X Wang IEEE Transactions on Electron Devices 65 (3), 921-927, 2018 | 18 | 2018 |
| Effects of a GaN cap layer on the reliability of AlGaN/GaN Schottky diodes H Kang, Q Wang, H Xiao, C Wang, L Jiang, C Feng, H Chen, H Yin, S Qu, ... physica status solidi (a) 212 (5), 1158-1161, 2015 | 18 | 2015 |
| Optimization of growth and fabrication techniques to enhance the InGaN/GaN multiple quantum well solar cells performance S Liu, Q Wang, H Xiao, K Wang, C Wang, X Wang, W Ge, Z Wang Superlattices and Microstructures 109, 194-200, 2017 | 17 | 2017 |
| Single event burnout hardening of enhancement mode HEMTs with double field plates Z Zhen, C Feng, Q Wang, D Niu, X Wang, M Tan IEEE Transactions on Nuclear Science 68 (9), 2358-2366, 2021 | 15 | 2021 |
| Study of asymmetric cell structure tilt implanted 4H-SiC trench MOSFET W Ni, X Wang, M Xu, Q Wang, C Feng, H Xiao, L Jiang, W Li IEEE Electron Device Letters 40 (5), 698-701, 2019 | 14 | 2019 |
| Impact of dual field plates on drain current degradation in InAlN/AlN/GaN HEMTs W Li, Q Wang, X Zhan, J Yan, L Jiang, H Yin, J Gong, X Wang, F Liu, B Li, ... Semiconductor science and technology 31 (12), 125003, 2016 | 14 | 2016 |
| Room Temperature 2DEG Mobility Above 2350 cm 2/V· s in AlGaN/GaN HEMT Grown on GaN Substrate J Chu, Q Wang, L Jiang, C Feng, W Li, H Liu, H Xiao, X Wang Journal of Electronic Materials 50, 2630-2636, 2021 | 12 | 2021 |
| Two-dimensional electron and hole gases in InxGa1− xN/AlyGa1− yN/GaN heterostructure for enhancement mode operation J Yan, X Wang, Q Wang, S Qu, H Xiao, E Peng, H Kang, C Wang, C Feng, ... Journal of Applied Physics 116 (5), 2014 | 12 | 2014 |
| High-voltage AlGaN/GaN-based lateral Schottky barrier diodes H Kang, Q Wang, HL Xiao, CM Wang, LJ Jiang, C Feng, H Chen, HB Yin, ... Chinese Physics Letters 31 (6), 068502, 2014 | 12 | 2014 |
| Highly sensitive detection of deoxyribonucleic acid hybridization using Au-gated AlInn/GaN high electron mobility transistor-based sensors XM Zhan, ML Hao, Q Wang, W Li, HL Xiao, C Feng, LJ Jiang, CM Wang, ... Chinese Physics Letters 34 (4), 047301, 2017 | 11 | 2017 |
| Comparison of GaN/AlGaN/AlN/GaN HEMTs grown on sapphire with Fe-modulation-doped and unintentionally doped GaN buffer: Material growth and device fabrication JM Gong, Q Wang, JD Yan, FQ Liu, C Feng, XL Wang, ZG Wang Chinese Physics Letters 33 (11), 117303, 2016 | 11 | 2016 |
| Comparative Study of SiC Planar MOSFETs With Different p-Body Designs W Ni, X Wang, M Xu, M Li, C Feng, H Xiao, L Jiang, W Li, Q Wang IEEE Transactions on Electron Devices 67 (3), 1071-1076, 2020 | 10 | 2020 |
| A broadband asymmetrical GaN MMIC doherty power amplifier with compact size for 5G communications P Cheng, Q Wang, W Li, Y Jia, Z Liu, C Feng, L Jiang, H Xiao, X Wang Electronics 10 (3), 311, 2021 | 9 | 2021 |
| Roles of polarization effects in InGaN/GaN solar cells and comparison of pin and nip structures K Wang, Q Wang, J Chu, H Xiao, X Wang, Z Wang Optics Express 26 (22), A946-A954, 2018 | 8 | 2018 |
| The influence of Fe doping on the surface topography of GaN epitaxial material L Cui, H Yin, L Jiang, Q Wang, C Feng, H Xiao, C Wang, J Gong, B Zhang, ... Journal of Semiconductors 36 (10), 103002, 2015 | 8 | 2015 |
| InxGa1− xN/GaN multiple quantum well solar cells with conversion efficiency of 3.77% SM Liu, HL Xiao, Q Wang, JD Yan, XM Zhan, JM Gong, XL Wang, ... Chinese Physics Letters 32 (8), 088401, 2015 | 7 | 2015 |
| Hybrid-gate structure designed for high-performance normally-off p-GaN high-electron-mobility transistor D Niu, Q Wang, W Li, C Chen, J Xu, L Jiang, C Feng, H Xiao, Q Wang, ... Japanese Journal of Applied Physics 59 (11), 111001, 2020 | 6 | 2020 |
| Comparative Study on Characteristics of AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors Z Zhen, Q Wang, Y Qin, C Chen, J Xu, L Jiang, H Xiao, Q Wang, X Wang, ... physica status solidi (a) 219 (10), 2200010, 2022 | 5 | 2022 |
| Abnormal increase of 2DEG density in AlGaN/GaN HEMT grown on free-standing GaN substrate J Chu, Q Wang, C Feng, L Jiang, W Li, H Liu, Q Wang, H Xiao, X Wang Japanese Journal of Applied Physics 60 (3), 035506, 2021 | 5 | 2021 |
