| Making electrical contacts to nanowires with a thick oxide coating SB Cronin, YM Lin, O Rabin, MR Black, JY Ying, MS Dresselhaus, PL Gai, ... Nanotechnology 13 (5), 653, 2002 | 172 | 2002 |
| Methods of forming polycrystalline semiconductor waveguides for optoelectronic integrated circuits, and devices formed thereby JS Foresi, AM Agarwal, MR Black, DM Koker, LC Kimerling US Patent 5,841,931, 1998 | 166 | 1998 |
| Infrared absorption in bismuth nanowires resulting from quantum confinement MR Black, YM Lin, SB Cronin, O Rabin, MS Dresselhaus Physical Review B 65 (19), 195417, 2002 | 132 | 2002 |
| Quantum wells and quantum wires for potential thermoelectric applications MS Dresselhaus, YM Lin, SB Cronin, O Rabin, MR Black, G Dresselhaus, ... Semiconductors and Semimetals 71, 1-121, 2001 | 129 | 2001 |
| Low‐loss polycrystalline silicon waveguides for silicon photonics AM Agarwal, L Liao, JS Foresi, MR Black, X Duan, LC Kimerling Journal of Applied Physics 80 (11), 6120-6123, 1996 | 127 | 1996 |
| Nanostructured silicon via metal assisted catalyzed etch (MACE): chemistry fundamentals and pattern engineering F Toor, JB Miller, LM Davidson, L Nichols, W Duan, MP Jura, J Yim, ... Nanotechnology 27 (41), 412003, 2016 | 119 | 2016 |
| Losses in polycrystalline silicon waveguides JS Foresi, MR Black, AM Agarwal, LC Kimerling Applied Physics Letters 68 (15), 2052-2054, 1996 | 89 | 1996 |
| Metal assisted catalyzed etched (MACE) black Si: optics and device physics F Toor, JB Miller, LM Davidson, W Duan, MP Jura, J Yim, J Forziati, ... Nanoscale 8 (34), 15448-15466, 2016 | 85 | 2016 |
| Optoelectronic integrated circuits formed of polycrystalline semiconductor waveguide JS Foresi, AM Agarwal, MR Black, DM Koker, LC Kimerling US Patent 6,108,464, 2000 | 80 | 2000 |
| Nanowires MS Dresselhaus, YM Lin, O Rabin, MR Black, J Kong, G Dresselhaus Springer handbook of nanotechnology, 119-167, 2010 | 69 | 2010 |
| Optical absorption from an indirect transition in bismuth nanowires MR Black, PL Hagelstein, SB Cronin, YM Lin, MS Dresselhaus Physical Review B 68 (23), 235417, 2003 | 69 | 2003 |
| Intersubband transitions in bismuth nanowires MR Black, M Padi, SB Cronin, YM Lin, O Rabin, T McClure, ... Applied Physics Letters 77 (25), 4142-4144, 2000 | 63 | 2000 |
| Semiconductors and Semimetals: Recent Trends in Thermoelectric Materials Research III MS Dresselhaus, YM Lin, T Koga, SB Cronin, O Rabin, MR Black, ... TM Tritt (San Diego: Academic, 2001), 1, 2001 | 51 | 2001 |
| Process for fabricating nanowire arrays BA Buchine, F Modawar, MR Black US Patent 8,143,143, 2012 | 41 | 2012 |
| Indirect L to T point optical transition in bismuth nanowires AJ Levin, MR Black, MS Dresselhaus Physical Review B—Condensed Matter and Materials Physics 79 (16), 165117, 2009 | 40 | 2009 |
| Optoelectronic devices utilizing materials having enhanced electronic transitions MR Black US Patent 7,893,512, 2011 | 35 | 2011 |
| Nanostructured devices BA Buchine, F Modawar, MR Black US Patent 8,450,599, 2013 | 31 | 2013 |
| Bismuth nanowires for potential applications in nanoscale electronics technology SB Cronin, YM Lin, O Rabin, MR Black, G Dresselhaus, MS Dresselhaus, ... Microscopy and Microanalysis 8 (1), 58-63, 2002 | 27 | 2002 |
| Surface modifying doped silicon nanowire based solar cells for applications in biosensing R Smith, W Duan, J Quarterman, A Morris, C Collie, M Black, F Toor, ... Advanced Materials Technologies 4 (2), 1800349, 2019 | 26 | 2019 |
| Nanostructured silicon for battery anodes BA Buchine, F Modawar, MR Black US Patent 8,791,449, 2014 | 26 | 2014 |
