| An artificial neuron based on a threshold switching memristor X Zhang, W Wang, Q Liu, X Zhao, J Wei, R Cao, Z Yao, X Zhu, F Zhang, ... IEEE Electron Device Letters 39 (2), 308-311, 2017 | 310 | 2017 |
| Eliminating negative-SET behavior by suppressing nanofilament overgrowth in cation-based memory S Liu, N Lu, X Zhao, H Xu, W Banerjee, H Lv, S Long, Q Li, Q Liu, M Liu Adv. Mater 28 (48), 10623-10629, 2016 | 221 | 2016 |
| Breaking the current‐retention dilemma in cation‐based resistive switching devices utilizing graphene with controlled defects X Zhao, J Ma, X Xiao, Q Liu, L Shao, D Chen, S Liu, J Niu, X Zhang, ... Advanced materials 30 (14), 1705193, 2018 | 218 | 2018 |
| Metal–Semiconductor–Metal ε-Ga2O3 Solar-Blind Photodetectors with a Record-High Responsivity Rejection Ratio and Their Gain Mechanism Y Qin, L Li, X Zhao, GS Tompa, H Dong, G Jian, Q He, P Tan, X Hou, ... Acs Photonics 7 (3), 812-820, 2020 | 186 | 2020 |
| Confining cation injection to enhance CBRAM performance by nanopore graphene layer X Zhao, S Liu, J Niu, L Liao, Q Liu, X Xiao, H Lv, S Long, W Banerjee, W Li, ... Small 13 (35), 1603948, 2017 | 169 | 2017 |
| Effects of Capping Electrode on Ferroelectric Properties of Hf0.5Zr0.5O2 Thin Films R Cao, Y Wang, S Zhao, Y Yang, X Zhao, W Wang, X Zhang, H Lv, Q Liu, ... IEEE Electron Device Letters 39 (8), 1207-1210, 2018 | 165 | 2018 |
| High‐Performance Harsh‐Environment‐Resistant GaOX Solar‐Blind Photodetectors via Defect and Doping Engineering X Hou, X Zhao, Y Zhang, Z Zhang, Y Liu, Y Qin, P Tan, C Chen, S Yu, ... Advanced Materials 34 (1), 2106923, 2022 | 160 | 2022 |
| Emulating short-term and long-term plasticity of bio-synapse based on Cu/a-Si/Pt memristor X Zhang, S Liu, X Zhao, F Wu, Q Wu, W Wang, R Cao, Y Fang, H Lv, ... IEEE Electron Device Letters 38 (9), 1208-1211, 2017 | 158 | 2017 |
| Review of polymorphous Ga2O3 materials and their solar-blind photodetector applications X Hou, Y Zou, M Ding, Y Qin, Z Zhang, X Ma, P Tan, S Yu, X Zhou, X Zhao, ... Journal of Physics D: Applied Physics 54 (4), 043001, 2020 | 153 | 2020 |
| Low defect density and small I− V curve hysteresis in NiO/β-Ga2O3 pn diode with a high PFOM of 0.65 GW/cm2 W Hao, Q He, K Zhou, G Xu, W Xiong, X Zhou, G Jian, C Chen, X Zhao, ... Applied Physics Letters 118 (4), 2021 | 134 | 2021 |
| Evolution of the conductive filament system in HfO2-based memristors observed by direct atomic-scale imaging Y Zhang, GQ Mao, X Zhao, Y Li, M Zhang, Z Wu, W Wu, H Sun, Y Guo, ... Nature communications 12 (1), 7232, 2021 | 122 | 2021 |
| In-sensor reservoir computing system for latent fingerprint recognition with deep ultraviolet photo-synapses and memristor array Z Zhang, X Zhao, X Zhang, X Hou, X Ma, S Tang, Y Zhang, G Xu, Q Liu, ... Nature Communications 13 (1), 6590, 2022 | 118 | 2022 |
| Demonstration of AlGaN/GaN-based ultraviolet phototransistor with a record high responsivity over 3.6× 107 A/W H Zhang, F Liang, K Song, C Xing, D Wang, H Yu, C Huang, Y Sun, ... Applied Physics Letters 118 (24), 2021 | 102 | 2021 |
| A habituation sensory nervous system with memristors Z Wu, J Lu, T Shi, X Zhao, X Zhang, Y Yang, F Wu, Y Li, Q Liu, M Liu Advanced Materials 32 (46), 2004398, 2020 | 101 | 2020 |
| Toward emerging gallium oxide semiconductors: A roadmap Y Yuan, W Hao, W Mu, Z Wang, X Chen, Q Liu, G Xu, C Wang, H Zhou, ... Fundamental Research 1 (6), 697-716, 2021 | 82 | 2021 |
| Performance‐enhancing selector via symmetrical multilayer design Y Sun, X Zhao, C Song, K Xu, Y Xi, J Yin, Z Wang, X Zhou, X Chen, G Shi, ... Advanced Functional Materials 29 (13), 1808376, 2019 | 74 | 2019 |
| Low power parylene‐based memristors with a graphene barrier layer for flexible electronics applications Q Chen, M Lin, Z Wang, X Zhao, Y Cai, Q Liu, Y Fang, Y Yang, M He, ... Advanced Electronic Materials 5 (9), 1800852, 2019 | 72 | 2019 |
| Bipolar analog memristors as artificial synapses for neuromorphic computing R Wang, T Shi, X Zhang, W Wang, J Wei, J Lu, X Zhao, Z Wu, R Cao, ... Materials 11 (11), 2102, 2018 | 67 | 2018 |
| Significant radiation tolerance and moderate reduction in thermal transport of a tungsten nanofilm by inserting monolayer graphene S Si, W Li, X Zhao, M Han, Y Yue, W Wu, S Guo, X Zhang, Z Dai, X Wang, ... Advanced Materials 29 (3), 1604623, 2017 | 64 | 2017 |
| A self-rectification and quasi-linear analogue memristor for artificial neural networks W Wang, R Wang, T Shi, J Wei, R Cao, X Zhao, Z Wu, X Zhang, J Lu, H Xu, ... IEEE Electron Device Letters 40 (9), 1407-1410, 2019 | 55 | 2019 |
Guangwei XuUniversity of Science and Technology of China在 ustc.edu.cn 的电子邮件经过验证
